公开(公告)号：US20200064183A1

公开(公告)日：2020-02-27

申请号：US16488259

申请日：2018-02-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Joost André KLUGKIST ,  Vadim Yevgenyevich BANINE ,  Johan Franciscus Maria BECKERS ,  Madhusudhanan JAMBUNATHAN ,  Maxim Aleksandrovich NASALEVICH ,  Andrey NIKIPELOV ,  Roland Johannes Wilhelmus STAS ,  David Ferdinand VLES ,  Wilhelmus Jacobus Johannes WELTERS ,  Sandro WRICKE

IPC: G01J1/42

Abstract: A sensor mark including: a substrate having: a deep ultra violet (DUV) radiation absorbing layer including a first material which substantially absorbs DUV radiation; and a protecting layer including a second material, wherein: the DUV radiation absorbing layer has a through hole in it; the protecting layer is positioned, in plan, in the through hole and the protecting layer in the through hole has a patterned region having a plurality of through holes; and the second material is more noble than the first material.