公开(公告)号：US11892776B2

公开(公告)日：2024-02-06

申请号：US17415101

申请日：2019-12-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Johannes Jacobus Matheus Baselmans ,  Duan-Fu Stephen Hsu ,  Willem Jan Bouman ,  Frank Jan Timmermans ,  Marie-claire Van Lare

IPC: G03F7/00

CPC classification number: G03F7/70308

Abstract: Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.