公开(公告)号：US11892776B2

公开(公告)日：2024-02-06

申请号：US17415101

申请日：2019-12-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Johannes Jacobus Matheus Baselmans ,  Duan-Fu Stephen Hsu ,  Willem Jan Bouman ,  Frank Jan Timmermans ,  Marie-claire Van Lare

IPC: G03F7/00

CPC classification number: G03F7/70308

Abstract: Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.

公开(公告)号：US12197120B2

公开(公告)日：2025-01-14

申请号：US17426806

申请日：2020-01-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Marie-Claire Van Lare ,  Frank Jan Timmermans ,  Friso Wittebrood ,  John Martin McNamara ,  Jozef Maria Finders

IPC: G03F1/24 ,  G03F1/26 ,  G03F1/32 ,  G03F7/20

Abstract: An attenuated phase shift patterning device including a first component for reflecting radiation, and a second component for reflecting radiation with a different phase with respect to the radiation reflected from the first component, the second component covering at least a portion of the surface of the first component such that a pattern including at least one uncovered portion of the first component is formed for generating a patterned radiation beam in a lithographic apparatus in use, wherein the second component includes a material having a refractive index with a real part (n) being less than 0.95 and an imaginary part (k) being less than 0.04.