公开(公告)号：US10859926B2

公开(公告)日：2020-12-08

申请号：US15580515

申请日：2016-05-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Stefan Hunsche ,  Rafael Aldana Laso ,  Vivek Kumar Jain ,  Marinus Jochemsen ,  Xinjian Zhou

IPC: G03F7/20 ,  G06T3/00 ,  G06T7/00

Abstract: A method of defect validation for a device manufacturing process, the method including: obtaining a first image of a pattern processed into an area on a substrate using the device manufacturing process under a first condition; obtaining a metrology image from the area; aligning the metrology image and the first image; and determining from the first image and the metrology image whether the area contains a defect, based on one or more classification criteria.