公开(公告)号：US20170176864A1

公开(公告)日：2017-06-22

申请号：US15451328

申请日：2017-03-06

Applicant: ASML Netherlands B.V.

Inventor： Duan-Fu HSU ,  Luoqi Chen ,  Hanying Feng ,  Rafael C. Howell ,  Xinjian Zhou ,  Yi-Fan Chen

IPC: G03F7/20

CPC classification number: G03F7/70066 ,  G03F7/705

Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics may be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.

公开(公告)号：US10859926B2

公开(公告)日：2020-12-08

申请号：US15580515

申请日：2016-05-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Stefan Hunsche ,  Rafael Aldana Laso ,  Vivek Kumar Jain ,  Marinus Jochemsen ,  Xinjian Zhou

IPC: G03F7/20 ,  G06T3/00 ,  G06T7/00

Abstract: A method of defect validation for a device manufacturing process, the method including: obtaining a first image of a pattern processed into an area on a substrate using the device manufacturing process under a first condition; obtaining a metrology image from the area; aligning the metrology image and the first image; and determining from the first image and the metrology image whether the area contains a defect, based on one or more classification criteria.

公开(公告)号：US10401732B2

公开(公告)日：2019-09-03

申请号：US15451328

申请日：2017-03-06

Applicant: ASML Netherlands B.V.

Inventor： Duan-Fu Hsu ,  Luoqi Chen ,  Hanying Feng ,  Rafael C. Howell ,  Xinjian Zhou ,  Yi-Fan Chen

IPC: G03F7/20

Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics may be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.