公开(公告)号：US12197136B2

公开(公告)日：2025-01-14

申请号：US18229984

申请日：2023-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Mark John Maslow ,  Koenraad Van Ingen Schenau ,  Patrick Warnaar ,  Abraham Slachter ,  Roy Anunciado ,  Simon Hendrik Celine Van Gorp ,  Frank Staals ,  Marinus Jochemsen

IPC: G03F7/00 ,  G03F1/00 ,  G06F30/20 ,  G06F30/33 ,  G06F30/398 ,  G06T7/00 ,  G21K5/00 ,  H01L21/00 ,  H01L21/66 ,  G06F119/18

Abstract: A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature manufactured on the substrate by a manufacturing process including a lithographic process and one or more further processes; determining one or more image-related metrics in dependence on a contour determined from the image, wherein one of the one or more image-related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or the one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.

公开(公告)号：US11768442B2

公开(公告)日：2023-09-26

申请号：US17973221

申请日：2022-10-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Mark John Maslow ,  Koenraad Van Ingen Schenau ,  Patrick Warnaar ,  Abraham Slachter ,  Roy Anunciado ,  Simon Hendrik Celine Van Gorp ,  Frank Staals ,  Marinus Jochemsen

IPC: G06F30/20 ,  G06F30/33 ,  G06F30/398 ,  G03F7/00 ,  G03F1/00 ,  G06T7/00 ,  G21K5/00 ,  H01L21/00 ,  H01L21/66 ,  G06F119/18

CPC classification number: G03F7/70625 ,  G06F30/20 ,  G06T7/0004 ,  H01L22/20 ,  G03F1/00 ,  G06F30/33 ,  G06F30/398 ,  G06F2119/18 ,  G21K5/00 ,  H01L21/00

Abstract: A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature of a device being manufactured in a layer on the substrate; obtaining a layout of features associated with a previous layer adjacent to the layer on the substrate; calculating one or more image-related metrics in dependence on: 1) a contour determined from the image including the at least one feature and 2) the layout; and determining one or more control parameters of a lithographic apparatus and/or one or more further processes in a manufacturing process of the device in dependence on the one or more image-related metrics, wherein at least one of the control parameters is determined to modify the geometry of the contour in order to improve the one or more image-related metrics.

公开(公告)号：US20210349395A1

公开(公告)日：2021-11-11

申请号：US17379662

申请日：2021-07-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Patrick WARNAAR ,  Patricius Aloysius Jacobus Tinnemans ,  Grzegorz Grzela ,  Everhardus Cornelis Mos ,  Wim Tjibbo Tel ,  Marinus Jochemsen ,  Bart Peter Bert Segers ,  Frank Staals

IPC: G03F7/20

Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

公开(公告)号：US10852646B2

公开(公告)日：2020-12-01

申请号：US16300314

申请日：2017-04-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Marinus Jochemsen ,  Scott Anderson Middlebrooks ,  Stefan Hunsche ,  Te-Sheng Wang

IPC: G03F7/20

Abstract: A method including obtaining an image of a plurality of structures on a substrate, wherein each of the plurality of structures is formed onto the substrate by transferring a corresponding pattern of a design layout; obtaining, from the image, a displacement for each of the structures with respect to a reference point for that structure; and assigning each of the structures into one of a plurality of groups based on the displacement.

公开(公告)号：US11681229B2

公开(公告)日：2023-06-20

申请号：US17214456

申请日：2021-03-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Hans Van Der Laan ,  Wim Tjibbo Tel ,  Marinus Jochemsen ,  Stefan Hunsche

IPC: G03F7/20 ,  G06F30/398 ,  H01L21/66 ,  G03F7/00

CPC classification number: G03F7/705 ,  G03F7/7065 ,  G03F7/70608 ,  G03F7/70616 ,  G03F7/70625 ,  G06F30/398 ,  H01L22/20 ,  H01L22/12

Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.

公开(公告)号：US20230042759A1

公开(公告)日：2023-02-09

申请号：US17968352

申请日：2022-10-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Frank Staals ,  Mark John Maslow ,  Roy Anunciado ,  Marinus Jochemsen ,  Hugo Augustinus Joseph Cramer ,  Thomas Theeuwes ,  Paul Christiaan Hinnen

IPC: G03F7/20

Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.

公开(公告)号：US10712672B2

公开(公告)日：2020-07-14

申请号：US16315026

申请日：2017-07-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Marinus Jochemsen ,  Stefan Hunsche ,  Wim Tjibbo Tel

IPC: G03F7/20

Abstract: A method including determining a first color pattern and a second color pattern associated with a hot spot of a design layout pattern, the design layout pattern configured for transfer to a substrate, and predicting, by a hardware computer system, whether there would be a defect at the hot spot on the substrate caused by overlay error, based at least in part on a measurement of an overlay error between the first color pattern and the second color pattern.

公开(公告)号：US11443083B2

公开(公告)日：2022-09-13

申请号：US16300380

申请日：2017-04-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Jing Su ,  Yi Zou ,  Chenxi Lin ,  Stefan Hunsche ,  Marinus Jochemsen ,  Yen-Wen Lu ,  Lin Lee Cheong

IPC: G06T7/00 ,  G06F30/20 ,  G03F7/20 ,  G06K9/62 ,  G06F30/398 ,  G06N20/00

Abstract: Methods of identifying a hot spot from a design layout or of predicting whether a pattern in a design layout is defective, using a machine learning model. An example method disclosed herein includes obtaining sets of one or more characteristics of performance of hot spots, respectively, under a plurality of process conditions, respectively, in a device manufacturing process; determining, for each of the process conditions, for each of the hot spots, based on the one or more characteristics under that process condition, whether that hot spot is defective; obtaining a characteristic of each of the process conditions; obtaining a characteristic of each of the hot spots; and training a machine learning model using a training set including the characteristic of one of the process conditions, the characteristic of one of the hot spots, and whether that hot spot is defective under that process condition.

公开(公告)号：US11442367B2

公开(公告)日：2022-09-13

申请号：US17411107

申请日：2021-08-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Jochem Sebastiaan Wildenberg ,  Marinus Jochemsen ,  Erik Jensen ,  Erik Johannes Maria Wallerbos ,  Cornelis Johannes Rijnierse ,  Bijoy Rajasekharan ,  Roy Werkman ,  Jurgen Johannes Henderikus Maria Schoonus

IPC: G03F7/20

Abstract: A method for optimizing a sequence of processes for manufacturing of product units, includes: associating measurement results of performance parameters (e.g., fingerprints) with the recorded process characteristics (e.g., context); obtaining a characteristic (e.g., context) of a previous process (e.g. deposition) in the sequence already performed on a product unit; obtaining a characteristic (e.g., context) of a subsequent process (e.g., exposure) in the sequence to be performed on the product unit; determining a predicted performance parameter (e.g., fingerprint) of the product unit associated with the sequence of previous and subsequent processes by using the obtained characteristics to retrieve measurement results of the performance parameters (e.g., fingerprints) corresponding to the recorded characteristics; and determining corrections to be applied to future processes (e.g. exposure, etch) in the sequence to be performed on the product unit, based on the determined predicted performance parameter.

公开(公告)号：US11300887B2

公开(公告)日：2022-04-12

申请号：US16463057

申请日：2017-11-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Johannes Franciscus Van Haren ,  Victor Emanuel Calado ,  Leon Paul Van Dijk ,  Roy Werkman ,  Everhardus Cornelis Mos ,  Jochem Sebastiaan Wildenberg ,  Marinus Jochemsen ,  Bijoy Rajasekharan ,  Erik Jensen ,  Adam Jan Urbanczyk

IPC: G03F7/20

Abstract: A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.