公开(公告)号：US11977336B2

公开(公告)日：2024-05-07

申请号：US17059771

申请日：2019-05-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Jen-Shiang Wang ,  Qian Zhao ,  Yunbo Guo ,  Yen-Wen Lu ,  Mu Feng ,  Qiang Zhang

IPC: G03F7/00

CPC classification number: G03F7/705 ,  G03F7/70441 ,  G03F7/70625 ,  G03F7/70655 ,  G03F7/706837

Abstract: A method for improving a process model for a patterning process, the method including obtaining a) a measured contour from an image capture device, and b) a simulated contour generated from a simulation of the process model. The method also includes aligning the measured contour with the simulated contour by determining an offset between the measured contour and the simulated contour. The process model is calibrated to reduce a difference, computed based on the determined offset, between the simulated contour and the measured contour.

公开(公告)号：US11422473B2

公开(公告)日：2022-08-23

申请号：US17256332

申请日：2019-06-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Jiao Liang ,  Chen Zhang ,  Qiang Zhang ,  Yunbo Guo

IPC: G03F7/20

Abstract: A method for improving a process model by measuring a feature on a printed design that was constructed based in part on a target design is disclosed. The method includes obtaining a) an image of the printed design from an image capture device and b) contours based on shapes in the image. The method also includes identifying, by a pattern recognition program, patterns on the target design that include the feature and determining coordinates, on the contours, that correspond to the feature. The method further includes improving the process model by at least a) providing a measurement of the feature based on the coordinates and b) calibrating the process model based on a comparison of the measurement with a corresponding feature in the target design.