公开(公告)号：US20220413391A1

公开(公告)日：2022-12-29

申请号：US17777348

申请日：2020-10-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Michel Alphons Theodorus VAN HINSBERG ,  James Robert DOWNES ,  Erwin Josef Maria VERDURMEN ,  Jacob Fredrik Friso KLINKHAMER ,  Roy WERKMAN ,  Jochem Sebastiaan WILDENBERG ,  Adam Jan URBANCZYK ,  Lucas Jan Joppe VISSER

IPC: G03F7/20

Abstract: A method for determining an input to a lens model to determine a setpoint for manipulation of a lens of a lithographic apparatus when addressing at least one of a plurality of fields of a substrate, the method including: receiving parameter data for the at least one field, the parameter data relating to one or more parameters of the substrate within the at least one field, the one or more parameters being at least partially sensitive to manipulation of the lens as part of an exposure performed by the lithographic apparatus; receiving lens model data relating to the lens; and determining the input based on the parameter data and on the lens model data.

公开(公告)号：US20240402618A1

公开(公告)日：2024-12-05

申请号：US18698578

申请日：2022-09-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Vahid BASTANI ,  Raoul Maarten Simon KNOPS ,  Thomas THEEUWES ,  Adam Jan URBANCZYK ,  Jochem Sebastiaan WILDENBERG ,  Robert Jan VAN WIJK

IPC: G03F7/00

Abstract: A method of determining a performance parameter distribution and/or associated quantile function. The method includes obtaining a quantile function prediction model operable to predict a quantile value for a substrate position and given quantile probability such that the predicted quantile values vary monotonically as a function of quantile probability and using the trained quantile 5 function prediction model to predict quantile values for a plurality of different quantile probabilities for one or more locations on the substrate.

公开(公告)号：US20190285992A1

公开(公告)日：2019-09-19

申请号：US16463057

申请日：2017-11-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Johannes Franciscus VAN HAREN ,  Victor Emanuel CALADO ,  Leon Paul VAN DIJK ,  Roy WERKMAN ,  Everhardus Cornelis MOS ,  Jochem Sebastiaan WILDENBERG ,  Marinus JOCHEMSEN ,  Bijoy RAJASEKHARAN ,  Erik JENSEN ,  Adam Jan URBANCZYK

IPC: G03F7/20

Abstract: A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.

公开(公告)号：US20190250520A1

公开(公告)日：2019-08-15

申请号：US16393055

申请日：2019-04-24

Applicant: ASML Netherlands B.V.

Inventor： Adam Jan URBANCZYK ,  Hans VAN DER LAAN ,  Grzegorz GRZELA ,  Alberto DA COSTA ASSAFRAO ,  Chien-Hung TSENG ,  Jay Jianhui CHEN

IPC: G03F7/20 ,  G01N21/47

Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: obtaining measured target response sequence data relating to a measurement response of a target formed on a substrate by a lithographic process to measurement radiation comprising multiple measurement profiles, wherein the measured target response sequence data describes a variation of the measurement response of the target in response to variations of the measurement profiles; obtaining reference target response sequence data relating to a measurement response of the target as designed to the measurement radiation, wherein the reference target response sequence data describes an optimal measurement response of the target in response to designed measurement profiles without un-designed variation; comparing the measured target response sequence data and the reference target response sequence data; and determining values for variations in stack parameters of the target from the measured target response sequence data based on the comparison.