公开(公告)号：US20210208512A1

公开(公告)日：2021-07-08

申请号：US16346135

申请日：2017-11-01

Applicant: ASML NETHERLANDS B.V.

Inventor： Victor Emanuel CALADO ,  Youping ZHANG ,  Maurits VAN DER SCHAAR ,  Richard Johannes Franciscus VAN HAREN ,  Xing Lan LIU

IPC: G03F7/20

Abstract: A method of measuring a parameter of a patterning process, the method including obtaining a measurement of a substrate processed by a patterning process, with a first metrology target measurement recipe; obtaining a measurement of the substrate with a second, different metrology target measurement recipe, wherein measurements using the first and second metrology target measurement recipes have their own distinct sensitivity to a metrology target structural asymmetry of the patterning process; and determining a value of the parameter by a weighted combination of the measurements of the substrate using the first and second metrology target measurement recipes, wherein the weighting reduces or eliminates the effect of the metrology target structural geometric asymmetry on the parameter of the patterning process determined from the measurements using the first and second metrology target measurement recipes.

公开(公告)号：US20190285992A1

公开(公告)日：2019-09-19

申请号：US16463057

申请日：2017-11-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Johannes Franciscus VAN HAREN ,  Victor Emanuel CALADO ,  Leon Paul VAN DIJK ,  Roy WERKMAN ,  Everhardus Cornelis MOS ,  Jochem Sebastiaan WILDENBERG ,  Marinus JOCHEMSEN ,  Bijoy RAJASEKHARAN ,  Erik JENSEN ,  Adam Jan URBANCZYK

IPC: G03F7/20

Abstract: A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.

公开(公告)号：US20210018852A1

公开(公告)日：2021-01-21

申请号：US17032249

申请日：2020-09-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Leon Paul VAN DIJK ,  Victor Emanuel CALADO ,  Xing Lan LIU ,  Richard Johannes Franciscus VAN HAREN

IPC: G03F7/20 ,  G03F9/00

Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form substrate shape measurements are performed. A model is applied, transforming the measured warp to modeled warp scaling values. Substrates are clamped to a chuck, causing substrate deformation. Alignment marks of the substrates are measured using an alignment system with four alignment measurement colors. Scaling values thus obtained are corrected with the modeled warp scaling values to determine corrected scaling values. An optimal alignment measurement color is determined, based on the corrected scaling values. Optionally, scaling values are selected that were measured using the optimal alignment measurement color and a substrate grid is determined using the selected scaling values. A substrate may be exposed using the determined substrate grid to correct exposure of the substrate.

公开(公告)号：US20190294059A1

公开(公告)日：2019-09-26

申请号：US16304419

申请日：2017-05-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Leon Paul VAN DIJK ,  Victor Emanuel CALADO ,  Willem Seine Christian ROELOFS ,  Richard Johannes Franciscus VAN HAREN

IPC: G03F7/20 ,  G01N21/956 ,  G01N21/94 ,  G01N21/95 ,  G03F1/64

Abstract: A method of determining a pellicle compensation correction which compensates for a distortion of a patterning device resultant from mounting of a pellicle onto the patterning device. The method includes determining a pellicle induced distortion from a first shape associated with the patterning device without the pellicle mounted and a second shape associated with the patterning device with the pellicle mounted, the pellicle induced distortion describing the distortion of the patterning device due to the pellicle being mounted. The determined pellicle induced distortion is then used to calculate the pellicle compensation correction for a lithographic exposure step using the patterning device.

公开(公告)号：US20200159128A1

公开(公告)日：2020-05-21

申请号：US16630886

申请日：2018-07-11

Applicant: ASML NETHERLANDS B.V

Inventor： Victor Emanuel CALADO ,  Richard Johannes Franciscus VAN HAREN ,  Jerome Yann Remi DEPRE ,  Clément André Auguste MASSACRIER

IPC: G03F7/20 ,  G03F7/16 ,  H01L23/544 ,  B24B37/005 ,  H01L21/67 ,  H01L21/306 ,  H01L21/66 ,  G01N21/84 ,  G03F7/00 ,  G01N21/47

Abstract: A device manufacturing method includes: forming a layer on a substrate by a layer-forming process; determining a value of a metric at a plurality of positions across the substrate, wherein variation of the values across the substrate is indicative of variation of layer thickness across the substrate; controlling the layer-forming parameter based on the values so as to reduce variation of layer thickness in a subsequent layer-forming process on a different substrate; and repeating the layer-forming process on a different substrate according to the controlled layer-forming parameter.

公开(公告)号：US20190250523A1

公开(公告)日：2019-08-15

申请号：US16344831

申请日：2017-10-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Leon Paul VAN DIJK ,  Victor Emanuel CALADO ,  Xing Lan LIU ,  Richard Johannes Franciscus VAN HAREN

IPC: G03F7/20 ,  G03F9/00

Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form substrate shape measurements are performed. A model is applied, transforming the measured warp to modeled warp scaling values. Substrates are clamped to a chuck, causing substrate deformation. Alignment marks of the substrates are measured using an alignment system with four alignment measurement colors. Scaling values thus obtained are corrected with the modeled warp scaling values to determine corrected scaling values. An optimal alignment measurement color is determined, based on the corrected scaling values. Optionally, scaling values are selected that were measured using the optimal alignment measurement color and a substrate grid is determined using the selected scaling values. A substrate may be exposed using the determined substrate grid to correct exposure of the substrate.

公开(公告)号：US20170052454A1

公开(公告)日：2017-02-23

申请号：US15240781

申请日：2016-08-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Martin Jacobus Johan JAK ,  Hendrik Jan Hidde SMILDE ,  Te-Chih HUANG ,  Victor Emanuel CALADO ,  Henricus Wilhelmus Maria VAN BUEL ,  Richard Johannes Franciscus VAN HAREN

IPC: G03F7/20

CPC classification number: G03F7/7065 ,  G03F7/70633 ,  G03F7/70683

Abstract: A substrate has a plurality of overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values, each of the overall asymmetry measurements being weighted by a corresponding weight factor. Each one of the weight factors represents a measure of feature asymmetry within the respective overlay grating. The calculation is used to improve subsequent performance of the measurement process, and/or the lithographic process. Some of the asymmetry measurements may additionally be weighted by a second weight factor in order to eliminate or reduce the contribution of phase asymmetry to the overlay.

Abstract translation: 衬底具有通过光刻工艺在其上形成的多个覆盖光栅。 每个覆盖光栅具有已知的叠加偏置。 叠加偏置的值包括例如在以P为中心的区域中的零点和两个值的区域中的两个值，其中P是光栅的间距。 使用不同覆盖偏差值的知识，对光栅的不对称测量计算叠加，每个整体不对称测量由相应的权重因子加权。 每个权重因子表示相应覆盖光栅内的特征不对称的度量。 该计算用于提高测量过程和/或光刻过程的后续性能。 另外可以通过第二加权因子来加权一些不对称测量值，以消除或减少相位不对称对叠加层的贡献。