公开(公告)号：US20180259858A1

公开(公告)日：2018-09-13

申请号：US15534391

申请日：2015-12-11

Applicant: ASML Netherlands B.V.

Inventor： Gang CHEN ,  Te-Sheng WANG

IPC: G03F7/20

CPC classification number: G03F7/70558 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70633

Abstract: A method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic apparatus, the method including: obtaining a relationship of a characteristic of one or more features in the portion with respect to dose; obtaining a value of the characteristic; and obtaining a target dose based on the value of the characteristic and the relationship.