公开(公告)号：US20230133487A1

公开(公告)日：2023-05-04

申请号：US18090750

申请日：2022-12-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng WANG ,  Xiang Wan

IPC: G03F7/20

Abstract: A process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yielded unacceptable patterned structures on the one or more substrates at corresponding inspection locations.

公开(公告)号：US20250147428A1

公开(公告)日：2025-05-08

申请号：US19008794

申请日：2025-01-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng WANG ,  Xiang WAN

IPC: G03F7/00

Abstract: A process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yielded unacceptable patterned structures on the one or more substrates at corresponding inspection locations.

公开(公告)号：US20240355578A1

公开(公告)日：2024-10-24

申请号：US18761319

申请日：2024-07-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng WANG ,  Szu-Po WANG ,  Kai-Yuan CHI

IPC: H01J37/22 ,  H01J37/28

CPC classification number: H01J37/222 ,  H01J37/28

Abstract: Disclosed are non-transitory computer-readable media, systems, and computer-implemented methods that describe obtaining hot spot (HS) location information with respect to a printed pattern; obtaining LFP search criteria for searching the printed pattern to determine a local focus point (LFP) for an imaging device; selecting a HS area in the printed pattern that contains a HS; and determining the LFP proximate to the HS area based on the LFP search criteria, the LFP not containing the HS.

公开(公告)号：US20230401727A1

公开(公告)日：2023-12-14

申请号：US18035233

申请日：2021-10-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng WANG

IPC: G06T7/33 ,  G06T7/00 ,  G03F7/00 ,  G03F9/00

CPC classification number: G06T7/33 ,  G06T7/001 ,  G06T2207/30148 ,  G03F9/7042 ,  G03F7/705

Abstract: A method for aligning a measured image of a pattern printed on a substrate with a design layout. The method includes: obtaining a design layout of a pattern to be printed on a substrate and a measured image of the pattern printed on the substrate; performing a simulation process to generate a plurality of simulated contours of the design layout for a plurality of process conditions of a patterning process; identifying a set of disfavored locations based on the simulated contours; and performing an image alignment process to align the measured image with a selected contour of the simulated contours using locations other than the set of disfavored locations.

公开(公告)号：US20190258169A1

公开(公告)日：2019-08-22

申请号：US16061501

申请日：2016-12-08

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng WANG

IPC: G03F7/20

Abstract: A process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yield unacceptable patterned structures on the one or more substrates at corresponding inspection locations.

公开(公告)号：US20240339295A1

公开(公告)日：2024-10-10

申请号：US18744367

申请日：2024-06-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Tzu-Chao CHEN ,  Te-Sheng WANG

IPC: H01J37/317 ,  G03F9/00 ,  H01J37/244 ,  H01J37/26 ,  H01J37/28

CPC classification number: H01J37/3177 ,  G03F9/7046 ,  H01J37/244 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/24578 ,  H01J2237/24592 ,  H01J2237/2817

Abstract: Methods are disclosed for generating a sample map and processing a sample. In one arrangement, a method comprises measuring a position of a first mark in each of a plurality of field regions on sample. A first model is fitted to the measured positions of the first marks. The fitted first model represents positions of the field regions. The method comprises measuring positions of a plurality of second marks in one field region or in each of a plurality of field regions. A second model is fitted to the measured positions of the second marks. The fitted second model represents a shape of each field region. A sample map is output using the fitted first and second models.

公开(公告)号：US20210294219A1

公开(公告)日：2021-09-23

申请号：US17338927

申请日：2021-06-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng WANG

IPC: G03F7/20

Abstract: A method including: simulating an image or characteristics thereof, using characteristics of a design layout and of a patterning process, determining deviations between the image or characteristics thereof and the design layout or characteristics thereof; aligning a metrology image obtained from a patterned substrate and the design layout based on the deviations, wherein the patterned substrate includes a pattern produced from the design layout using the patterning process; and determining a parameter of a patterned substrate from the metrology image aligned with the design layout.

公开(公告)号：US20200159124A1

公开(公告)日：2020-05-21

申请号：US16615207

申请日：2018-05-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng WANG ,  Qian ZHAO

IPC: G03F7/20 ,  G03F1/86

Abstract: A method involving obtaining a simulation of a contour of a pattern to be formed on a substrate using a patterning process, determining a location of an evaluation point on the simulated contour of the pattern, the location spatially associated with a location of a corresponding evaluation point on a design layout for the pattern, and producing electronic information corresponding to a spatial bearing between the location of the evaluation point on the simulated contour and the location of the corresponding evaluation point on the design layout, wherein the information corresponding to the spatial bearing is configured for determining a location of an evaluation point on a measured image of at least part of the pattern, the evaluation point on the measured image spatially associated with the corresponding evaluation point on the design layout.

公开(公告)号：US20180259858A1

公开(公告)日：2018-09-13

申请号：US15534391

申请日：2015-12-11

Applicant: ASML Netherlands B.V.

Inventor： Gang CHEN ,  Te-Sheng WANG

IPC: G03F7/20

CPC classification number: G03F7/70558 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70633

Abstract: A method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic apparatus, the method including: obtaining a relationship of a characteristic of one or more features in the portion with respect to dose; obtaining a value of the characteristic; and obtaining a target dose based on the value of the characteristic and the relationship.

公开(公告)号：US20240183806A1

公开(公告)日：2024-06-06

申请号：US18284824

申请日：2022-03-04

Applicant: ASML Netherlands B.V.

Inventor： Te-Sheng WANG ,  Szu-Po WANG ,  Tsung-Hsien LIU ,  Yung-Huan HSIEH

IPC: G01N23/2251

CPC classification number: G01N23/2251 ,  G01N2223/305 ,  G01N2223/6116

Abstract: Apparatuses, systems, and methods for determining local focus points (LFPs) on a sample are provided. In some embodiments, a controller including circuitry may be configured to cause a system to perform selecting a first plurality of resist pattern designs; performing a plurality of process simulations using the first plurality of resist pattern designs; identifying a hotspot that corresponds to a resist pattern design based on results of the performed process simulations; determining focus-related characteristics that correspond to a plurality of candidate resist patterns, wherein the plurality of candidate resist pattern designs is a subset of the first plurality of resist pattern designs and the subset is selected based on the identified hotspot; and determining locations of a plurality of LFPs based on the generated focus-related characteristics.