公开(公告)号：US11734490B2

公开(公告)日：2023-08-22

申请号：US17564837

申请日：2021-12-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Quan Zhang ,  Been-Der Chen ,  Rafael C. Howell ,  Jing Su ,  Yi Zou ,  Yen-Wen Lu

IPC: G06F30/30 ,  G03F1/30 ,  G03F7/20 ,  G06F30/398 ,  G03F1/36 ,  G03F1/70 ,  G03F7/00 ,  G06F119/18

CPC classification number: G06F30/398 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70441 ,  G03F7/705 ,  G06F2119/18

Abstract: A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.

公开(公告)号：US11232249B2

公开(公告)日：2022-01-25

申请号：US16976492

申请日：2019-02-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Quan Zhang ,  Been-Der Chen ,  Rafael C. Howell ,  Jing Su ,  Yi Zou ,  Yen-Wen Lu

IPC: G06F30/30 ,  G03F1/30 ,  G03F7/20 ,  G06F30/398 ,  G03F1/36 ,  G03F1/70 ,  G06F119/18

Abstract: A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.

公开(公告)号：US12038694B2

公开(公告)日：2024-07-16

申请号：US18118695

申请日：2023-03-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Youping Zhang ,  Maxime Philippe Frederic Genin ,  Cong Wu ,  Jing Su ,  Weixuan Hu ,  Yi Zou

IPC: G03F7/00

CPC classification number: G03F7/705 ,  G03F7/70675

Abstract: Methods for training a process model and determining ranking of simulated patterns (e.g., corresponding to hot spots). A method involves obtaining a training data set including: (i) a simulated pattern associated with a mask pattern to be printed on a substrate, (ii) inspection data of a printed pattern imaged on the substrate using the mask pattern, and (iii) measured values of a parameter of the patterning process applied during imaging of the mask pattern on the substrate; and training a machine learning model for the patterning process based on the training data set to predict a difference in a characteristic of the simulated pattern and the printed pattern. The trained machine learning model can be used for determining a ranking of hot spots. In another method a model is trained based on measurement data to predict ranking of the hot spots.

公开(公告)号：US11768440B2

公开(公告)日：2023-09-26

申请号：US18089007

申请日：2022-12-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Jing Su ,  Yen-Wen Lu ,  Ya Luo

IPC: G03F7/20 ,  G03F7/00 ,  G06N20/00 ,  G06N5/047

CPC classification number: G03F7/70441 ,  G03F7/705 ,  G06N5/047 ,  G06N20/00

Abstract: A method including: obtaining data based an optical proximity correction for a spatially shifted version of a training design pattern; and training a machine learning model configured to predict optical proximity corrections for design patterns using data regarding the training design pattern and the data based on the optical proximity correction for the spatially shifted version of the training design pattern.

公开(公告)号：US11561477B2

公开(公告)日：2023-01-24

申请号：US16640500

申请日：2018-09-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Jing Su ,  Yen-Wen Lu ,  Ya Luo

IPC: G03F7/20 ,  G06N20/00 ,  G06N5/04

Abstract: A method including: obtaining data based an optical proximity correction for a spatially shifted version of a training design pattern; and training a machine learning model configured to predict optical proximity corrections for design patterns using data regarding the training design pattern and the data based on the optical proximity correction for the spatially shifted version of the training design pattern.

公开(公告)号：US20240012335A1

公开(公告)日：2024-01-11

申请号：US18233365

申请日：2023-08-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Jing Su ,  Yen-Wen Lu ,  Ya Luo

IPC: G03F7/00 ,  G06N20/00 ,  G06N5/047

CPC classification number: G03F7/70441 ,  G06N20/00 ,  G03F7/705 ,  G06N5/047

Abstract: A method including: obtaining data based an optical proximity correction for a spatially shifted version of a training design pattern; and training a machine learning model configured to predict optical proximity corrections for design patterns using data regarding the training design pattern and the data based on the optical proximity correction for the spatially shifted version of the training design pattern.

公开(公告)号：US12204250B2

公开(公告)日：2025-01-21

申请号：US18233365

申请日：2023-08-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Jing Su ,  Yen-Wen Lu ,  Ya Luo

IPC: G03F7/00 ,  G06N5/047 ,  G06N20/00

Abstract: A method including: obtaining data based an optical proximity correction for a spatially shifted version of a training design pattern; and training a machine learning model configured to predict optical proximity corrections for design patterns using data regarding the training design pattern and the data based on the optical proximity correction for the spatially shifted version of the training design pattern.

公开(公告)号：US20230236512A1

公开(公告)日：2023-07-27

申请号：US18118695

申请日：2023-03-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Youping ZHANG ,  Maxime Philippe Frederic Genin ,  Cong Wu ,  Jing Su ,  Weixuan Hu ,  Yi Zou

IPC: G03F7/20

CPC classification number: G03F7/705 ,  G03F7/70675

Abstract: Methods for training a process model and determining ranking of simulated patterns (e.g., corresponding to hot spots). A method involves obtaining a training data set including: (i) a simulated pattern associated with a mask pattern to be printed on a substrate, (ii) inspection data of a printed pattern imaged on the substrate using the mask pattern, and (iii) measured values of a parameter of the patterning process applied during imaging of the mask pattern on the substrate; and training a machine learning model for the patterning process based on the training data set to predict a difference in a characteristic of the simulated pattern and the printed pattern. The trained machine learning model can be used for determining a ranking of hot spots. In another method a model is trained based on measurement data to predict ranking of the hot spots.

公开(公告)号：US20230137097A1

公开(公告)日：2023-05-04

申请号：US18089007

申请日：2022-12-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Jing Su ,  Yen-Wen Lu ,  Ya Luo

IPC: G03F7/20 ,  G06N20/00 ,  G06N5/047

Abstract: A method including: obtaining data based an optical proximity correction for a spatially shifted version of a training design pattern; and training a machine learning model configured to predict optical proximity corrections for design patterns using data regarding the training design pattern and the data based on the optical proximity correction for the spatially shifted version of the training design pattern.

公开(公告)号：US11635699B2

公开(公告)日：2023-04-25

申请号：US17312709

申请日：2019-12-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Youping Zhang ,  Maxime Philippe Frederic Genin ,  Cong Wu ,  Jing Su ,  Weixuan Hu ,  Yi Zou

IPC: G03F7/20

Abstract: Methods for training a process model and determining ranking of simulated patterns (e.g., corresponding to hot spots). A method involves obtaining a training data set including: (i) a simulated pattern associated with a mask pattern to be printed on a substrate, (ii) inspection data of a printed pattern imaged on the substrate using the mask pattern, and (iii) measured values of a parameter of the patterning process applied during imaging of the mask pattern on the substrate; and training a machine learning model for the patterning process based on the training data set to predict a difference in a characteristic of the simulated pattern and the printed pattern. The trained machine learning model can be used for determining a ranking of hot spots. In another method a model is trained based on measurement data to predict ranking of the hot spots.