IN-LENS WAFER PRE-CHARGING AND INSPECTION WITH MULTIPLE BEAMS

    公开(公告)号:US20200211818A1

    公开(公告)日:2020-07-02

    申请号:US16729177

    申请日:2019-12-27

    Abstract: A charged particle system may include a first charged particle beam source provided on a first axis, and a second charged particle beam source provided on a second axis. There may also be provided a deflector arranged on the first axis. The deflector may be configured to deflect a beam generated from the second charged particle beam source toward a sample. A method of operating a charged particle beam system may include switching between a first state and a second state of operating a deflector. In the first state, a first charged particle beam generated from a first charged particle beam source may be blanked and a second charged particle beam generated from a second charged particle beam source may be directed toward a sample. In the second state, the second charged particle beam may be blanked and the first charged particle beam may be directed toward the sample.

    SYSTEM AND METHOD FOR SCANNING A SAMPLE USING MULTI-BEAM INSPECTION APPARATUS

    公开(公告)号:US20210217582A1

    公开(公告)日:2021-07-15

    申请号:US17251724

    申请日:2019-06-07

    Abstract: An improved system and method for inspection of a sample using a particle beam inspection apparatus, and more particularly, to systems and methods of scanning a sample with a plurality of charged particle beams. An improved method of scanning an area of a sample using N charged particle beams, wherein Nis an integer greater than or equal to two, and wherein the area of the sample comprises a plurality of scan sections of N consecutive scan lines, includes moving the sample in a first direction. The method also includes scanning, with a first charged particle beam of the N charged particle beams, first scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the first charged particle beam. The method further includes scanning, with a second charged particle beam of the N charged particle beams, second scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the second charged particle beam.

    CHARGED PARTICLE SYSTEM, APERTURE ARRAY, CHARGED PARTICLE TOOL AND METHOD OF OPERATING A CHARGED PARTICLE SYSTEM

    公开(公告)号:US20230223233A1

    公开(公告)日:2023-07-13

    申请号:US18117369

    申请日:2023-03-03

    CPC classification number: H01J37/3177 H01J37/28 H01J37/12

    Abstract: A charged particle system generates a charged particle multi beam along a multi beam path. The charged particle system comprises an aperture array, a beam limit array and a condenser lens. In the aperture array are an array of apertures to generate from an up-beam charged particle source charged particle paths down-beam of the aperture array. The beam-limit array is down-beam of the aperture array. Defined in the beam-limit array is an array of beam-limit apertures for shaping the charged particle multi beam path. The condenser lens system is between the aperture array and the beam-limit array. The condenser lens system selectively operates different of rotation settings that define different ranges of beam paths between the aperture array and the beam-limit array. At each rotation setting of the condenser lens system, each beam-limit aperture of the beam-limit array lies on a beam path down-beam of the aperture array.

    IN-LENS WAFER PE-CHARGING AND INSPECTION WITH MULTIPLE BEAMS

    公开(公告)号:US20220102111A1

    公开(公告)日:2022-03-31

    申请号:US17494518

    申请日:2021-10-05

    Abstract: A charged particle system may include a first charged particle beam source provided on a first axis, and a second charged particle beam source provided on a second axis. There may also be provided a deflector arranged on the first axis. The deflector may be configured to deflect a beam generated from the second charged particle beam source toward a sample. A method of operating a charged particle beam system may include switching between a first state and a second state of operating a deflector. In the first state, a first charged particle beam generated from a first charged particle beam source may be blanked and a second charged particle beam generated from a second charged particle beam source may be directed toward a sample. In the second state, the second charged particle beam may be blanked and the first charged particle beam may be directed toward the sample.

Patent Agency Ranking