Abstract:
An electron beam apparatus addresses blanking issues resulting from sinking high-power heat onto an aperture diaphragm by evenly spreading heat on the aperture diaphragm. The apparatus can include an aperture diaphragm and a deflector that deflects the electron beam on the aperture diaphragm. The electron beam is directed at the aperture diaphragm in a pattern around the aperture. The pattern may be a circle, square, or polygon. The pattern also may include a variable locus relative to the aperture.
Abstract:
An improved system and method for inspection of a sample using a particle beam inspection apparatus, and more particularly, to systems and methods of scanning a sample with a plurality of charged particle beams. An improved method of scanning an area of a sample using N charged particle beams, wherein N is an integer greater than or equal to two, and wherein the area of the sample comprises a plurality of scan sections of N consecutive scan lines, includes moving the sample in a first direction. The method also includes scanning, with a first charged particle beam of the N charged particle beams, first scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the first charged particle beam. The method further includes scanning, with a second charged particle beam of the N charged particle beams, second scan lines of at least some scan sections of the plurality of scan sections moving towards a probe spot of the second charged particle beam.
Abstract:
A method is provided for processing and/or observing an object using at least one particle beam that is scanned over the object. A scan region on the object is determined, the scan region having scan lines, and the particle beam is moved in a first scanning direction along one of the scan lines. The first scanning direction is changed to a second scanning direction at a change-of-direction time. Changing from the first scanning direction to the second scanning direction comprises setting of a point of rotation in that scan line of the scan region in which the particle beam is situated at the change-of-direction time, with an axis of rotation extending through the point of rotation. The first scanning direction is changed into the second scanning direction by rotating the scan region about the axis of rotation, with the point of rotation being selected dependent on the direction of rotation.
Abstract:
Methods, apparatuses, systems and software for ion beam milling or machining are disclosed. The apparatus includes a specimen holder, a table, one or more ion sources, rotatable ion optics, and an imaging device. The specimen holder is configured to hold a specimen in a stationary position during milling or machining. The table is configured to change the stationary position of the specimen holder in any of three orthogonal linear directions and an angular direction. The rotatable ion optics are configured to emit an ion beam towards a predetermined location on the specimen from any of the one or more ion sources at any angle around an axis that is orthogonal to a horizontal surface of the table when the angular direction of the table is 0°. The imaging device is configured to generate an image of the specimen including the predetermined location, thereby enabling real-time monitoring of the milling or machining process.
Abstract:
A tool for patterning a disk such as a magnetic media disk for use in a disk drive system. The tool includes a chamber and a first and second series of magnets, each evenly spaced about the chamber wall. An ion beam source at an end of the chamber emits an ion beam toward the disk which is held within the chamber. The first series of magnets deflect the ion beam away from center and toward the chamber wall. The second ion beam source deflects the ion beam back toward the center so that the ion beam can strike the disk at an angle. In addition, to bending the ion beam, the magnets also rotate the bent ion beam so the movement of the ion beam revolves within the chamber.
Abstract:
The invention relates to a method for producing a sample on an object using a material processing device. The invention further relates to a computer program product and a material processing device for carrying out the method. The method comprises guiding a light beam over a surface of the object in a first direction along a first line, with material of the object being ablated when the light beam is guided over the surface of the object, changing the first direction into a second direction, guiding the light beam over the surface of the object in the second direction along a second line, with material of the object being ablated when the light beam is guided over the surface of the object along the second line, wherein the light beam is provided in pulsed fashion and is guided onto the surface of the object in such a way that the light beam ablates material from the object in a first operational state of the light beam device and that the light beam is not guided onto the object in a second operational state, and wherein the sample is produced in the first operational state by ablating material from the object.
Abstract:
A method and system are disclosed for improving characteristic peak signals in electron energy loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy (EDS) measurements of crystalline materials. A beam scanning protocol is applied which varies the inclination, azimuthal angle, or a combination thereof of the incident beam while spectroscopic data is acquired. The method and system may be applied to compositional mapping.
Abstract:
A spin device includes: a first condenser lens which focuses a spin polarized electron beam discharged from an electron gun or reflected on a sample; a spin rotator which includes a multipole having a point to which the electron beam is focused by the first condenser lens at a lens center or in the vicinity of the lens center and being capable of generating an electric field and a magnetic field; a Wien condition generating means which applies a voltage and a current which satisfy the Wien condition for rotating spin of the electron beam by a designated angle and making the electron beam advance straightly to the multipole which constitutes the spin rotator; and a second condenser lens which focuses the electron beam whose spin is rotated by the spin rotator.
Abstract:
An apparatus and process in which a particle beam is used to introduce a pattern into an energy sensitive material is disclosed. A coil assembly is used to selectively control both the orientation of the particle beam relative to the substrate on which the energy sensitive material is applied and the magnification or demagnification of the image in the particle beam. The coil assembly comprises at least two coils. The particle beam is projected through the coil assembly. The coil assembly is used to rotate the particle beam to compensate for an observed difference between the actual substrate orientation and the desired substrate orientation. The coils in the coil assembly are excited so that the desired rotation is introduced into the particle beam by the cumulative effects of the magnetic fields generated by the excited coils in the coil assembly. The coils in the coil assembly are calibrated such that the desired amount of beam rotation is provided by the coil assembly without introducing unwanted lens effects into the beam. The coils are also used to introduce a desired lens effect, such as magnification of demagnification, into the particle beam without introducing unwanted rotation into the beam. In another embodiment, the coils are used to introduce a desired lens effect, such as magnification or demagnification, into the particle beam without introducing unwanted rotation into the beam.
Abstract:
The present invention relates to a system for drawing patterns on a wafer by using a charged particle beam such as an electron beam, in which a complicated prealigning mechanism used for mounting the wafer on a stage is omitted. Instead, according to the present system, rotation of the wafer is detected and a shaped beam is rotated by an amount corresponding to the value detected. Subsequently, a predetermined pattern is drawn on the substrate. The system includes a detecting device for detecting the rotation of the wafer by using an orientation flat or adjusting marks; a computer for storing a value corresponding to the rotation thus detected; a rotating lens control circuit for receiving data from the computer; and a rotating lens.