Pixel structure of organic light emitting device
    1.
    发明授权
    Pixel structure of organic light emitting device 有权
    有机发光装置的像素结构

    公开(公告)号:US09040991B2

    公开(公告)日:2015-05-26

    申请号:US13762372

    申请日:2013-02-08

    Inventor: Chun-Yen Liu

    CPC classification number: H01L27/088 H01L27/1255 H01L27/32 H01L27/3262

    Abstract: A pixel structure including a first scan line, a second scan line, a data line and a power line substantially perpendicular to the first scan line and the second scan line, a reference signal line and an emission signal line substantially parallel with the first scan line and the second scan line, a common thin film transistor (C-TFT), a first pixel unit, and a second pixel unit is provided. The common thin film transistor has a common gate electrode, a common source electrode and a common drain electrode. The common gate electrode is electrically connected to the first scan line, the common drain electrode is electrically connected to the reference signal line. The first and the second pixel units respectively have a first TFT, a second TFT, a third TFT, a fourth TFT, a fifth TFT, a sixth TFT, a capacitor, and an emission device.

    Abstract translation: 包括基本上垂直于第一扫描线和第二扫描线的第一扫描线,第二扫描线,数据线和电源线的像素结构,基本上与第一扫描线平行的参考信号线和发射信号线 并且提供第二扫描线,公共薄膜晶体管(C-TFT),第一像素单元和第二像素单元。 公共薄膜晶体管具有公共栅电极,公共源电极和公共漏电极。 公共栅极电连接到第一扫描线,公共漏极电连接到参考信号线。 第一和第二像素单元分别具有第一TFT,第二TFT,第三TFT,第四TFT,第五TFT,第六TFT,电容器和发射器件。

    PIXEL STRUCTURE OF ORGANIC LIGHT EMITTING DEVICE
    2.
    发明申请
    PIXEL STRUCTURE OF ORGANIC LIGHT EMITTING DEVICE 有权
    有机发光装置的像素结构

    公开(公告)号:US20130153908A1

    公开(公告)日:2013-06-20

    申请号:US13762371

    申请日:2013-02-08

    Inventor: Chun-Yen Liu

    CPC classification number: H01L27/088 H01L27/1255 H01L27/32 H01L27/3262

    Abstract: A pixel structure including a first scan line, a second scan line, a data line and a power line substantially perpendicular to the first scan line and the second scan line, a reference signal line and an emission signal line substantially parallel with the first scan line and the second scan line, a common thin film transistor (C-TFT), a first pixel unit, and a second pixel unit is provided. The common thin film transistor has a common gate electrode, a common source electrode and a common drain electrode. The common gate electrode is electrically connected to the first scan line, the common drain electrode is electrically connected to the reference signal line. The first and the second pixel units respectively have a first TFT, a second TFT, a third TFT, a fourth TFT, a fifth TFT, a sixth TFT, a capacitor, and an emission device.

    Abstract translation: 包括基本上垂直于第一扫描线和第二扫描线的第一扫描线,第二扫描线,数据线和电源线的像素结构,基本上与第一扫描线平行的参考信号线和发射信号线 并且提供第二扫描线,公共薄膜晶体管(C-TFT),第一像素单元和第二像素单元。 公共薄膜晶体管具有公共栅电极,公共源电极和公共漏电极。 公共栅极电连接到第一扫描线,公共漏极电连接到参考信号线。 第一和第二像素单元分别具有第一TFT,第二TFT,第三TFT,第四TFT,第五TFT,第六TFT,电容器和发射器件。

    PIXEL STRUCTURE
    3.
    发明申请
    PIXEL STRUCTURE 有权
    像素结构

    公开(公告)号:US20130256674A1

    公开(公告)日:2013-10-03

    申请号:US13905073

    申请日:2013-05-29

    CPC classification number: H01L27/1255 H01L27/1214 H01L27/3265 H01L33/0041

    Abstract: A pixel structure including a semiconductor layer having at least one source region and at least one drain region; a first insulating layer covering the semiconductor layer; a first conductive layer on the first insulating layer and including at least one gate; a second insulating layer covering the first conductive layer; a second conductive layer on the second insulating layer and including at least one source electrode, at least one drain electrode and at least one bottom electrode, the source region, the source electrode, the drain region, the drain electrode and the gate forming at least one thin film transistor; a third insulating layer covering the second conductive layer; a third conductive layer on the third insulating layer and including at least one top electrode, the top electrode and the bottom electrode forming at least one capacitor; and a pixel electrode electrically connected to the thin film transistor.

    Abstract translation: 一种像素结构,包括具有至少一个源极区和至少一个漏极区的半导体层; 覆盖半导体层的第一绝缘层; 在所述第一绝缘层上的第一导电层,并且包括至少一个栅极; 覆盖所述第一导电层的第二绝缘层; 在所述第二绝缘层上的第二导电层,并且包括至少一个源电极,至少一个漏电极和至少一个底电极,所述源极区,所述源电极,所述漏极区,所述漏电极和所述栅至少形成 一个薄膜晶体管; 覆盖所述第二导电层的第三绝缘层; 在所述第三绝缘层上的第三导电层,并且包括至少一个顶部电极,所述顶部电极和所述底部电极形成至少一个电容器; 以及电连接到所述薄膜晶体管的像素电极。

    Pixel circuit and driving method thereof

    公开(公告)号:US10157570B2

    公开(公告)日:2018-12-18

    申请号:US15151997

    申请日:2016-05-11

    Abstract: A pixel circuit includes a driving unit, a light emitting unit having a second terminal receiving a second voltage, a compensation capacitor, and first, second and third switches. The first switch has a first terminal connected to the driving unit, and a control terminal for receiving a first control signal. The second switch has a first terminal coupled to the second terminal of the first switch, a second terminal for receiving an initialization signal, and a control terminal for receiving the first control signal. The compensation capacitor has a first terminal coupled to the second terminal of the first switch, and a second terminal coupled to the first terminal of the light emitting unit. The third switch has a first terminal connected to the driving unit, a second terminal coupled to the first terminal of the light emitting unit, and a control terminal for receiving a light emission control signal.

    Pixel structure with compensation function, and driving method thereof
    5.
    发明授权
    Pixel structure with compensation function, and driving method thereof 有权
    具有补偿功能的像素结构及其驱动方法

    公开(公告)号:US09165503B2

    公开(公告)日:2015-10-20

    申请号:US13910292

    申请日:2013-06-05

    Abstract: A pixel structure and a driving method thereof are disclosed. The pixel structure includes a first capacitor, an input unit, a compensation unit, a pixel driving unit, a resetting unit, a light-emitting diode, a light-emitting activation unit and a coupling unit. The input unit controls a voltage on a first terminal of the first capacitor according to a first scanning signal and a data signal. The compensation unit coupled to the first capacitor is configured to control voltages on the terminals of the first capacitor according to a second scanning signal. The pixel driving unit is configured to provide a driving current to the light-emitting diode according to a first reference voltage and the voltage on a second terminal of the first capacitor. The coupling unit is coupled to the light-emitting activation unit, the first terminal of the first capacitor, the input unit and the compensation unit.

    Abstract translation: 公开了像素结构及其驱动方法。 像素结构包括第一电容器,输入单元,补偿单元,像素驱动单元,复位单元,发光二极管,发光激活单元和耦合单元。 输入单元根据第一扫描信号和数据信号来控制第一电容器的第一端子上的电压。 耦合到第一电容器的补偿单元被配置为根据第二扫描信号来控制第一电容器的端子上的电压。 像素驱动单元被配置为根据第一参考电压和第一电容器的第二端子上的电压向发光二极管提供驱动电流。 耦合单元耦合到发光激活单元,第一电容器的第一端子,输入单元和补偿单元。

    Pixel structure of organic light emitting device
    6.
    发明授权
    Pixel structure of organic light emitting device 有权
    有机发光装置的像素结构

    公开(公告)号:US08710506B2

    公开(公告)日:2014-04-29

    申请号:US13762371

    申请日:2013-02-08

    Inventor: Chun-Yen Liu

    CPC classification number: H01L27/088 H01L27/1255 H01L27/32 H01L27/3262

    Abstract: A pixel structure including a first scan line, a second scan line, a data line and a power line substantially perpendicular to the first scan line and the second scan line, a reference signal line and an emission signal line substantially parallel with the first scan line and the second scan line, a common thin film transistor (C-TFT), a first pixel unit, and a second pixel unit is provided. The common thin film transistor has a common gate electrode, a common source electrode and a common drain electrode. The common gate electrode is electrically connected to the first scan line, the common drain electrode is electrically connected to the reference signal line. The first and the second pixel units respectively have a first TFT, a second TFT, a third TFT, a fourth TFT, a fifth TFT, a sixth TFT, a capacitor, and an emission device.

    Abstract translation: 包括基本上垂直于第一扫描线和第二扫描线的第一扫描线,第二扫描线,数据线和电源线的像素结构,基本上与第一扫描线平行的参考信号线和发射信号线 并且提供第二扫描线,公共薄膜晶体管(C-TFT),第一像素单元和第二像素单元。 公共薄膜晶体管具有公共栅电极,公共源电极和公共漏电极。 公共栅极电连接到第一扫描线,公共漏极电连接到参考信号线。 第一和第二像素单元分别具有第一TFT,第二TFT,第三TFT,第四TFT,第五TFT,第六TFT,电容器和发射器件。

    PIXEL STRUCTURE OF ORGANIC LIGHT EMITTING DEVICE

    公开(公告)号:US20130146857A1

    公开(公告)日:2013-06-13

    申请号:US13762372

    申请日:2013-02-08

    Inventor: Chun-Yen Liu

    CPC classification number: H01L27/088 H01L27/1255 H01L27/32 H01L27/3262

    Abstract: A pixel structure including a first scan line, a second scan line, a data line and a power line substantially perpendicular to the first scan line and the second scan line, a reference signal line and an emission signal line substantially parallel with the first scan line and the second scan line, a common thin film transistor (C-TFT), a first pixel unit, and a second pixel unit is provided. The common thin film transistor has a common gate electrode, a common source electrode and a common drain electrode. The common gate electrode is electrically connected to the first scan line, the common drain electrode is electrically connected to the reference signal line. The first and the second pixel units respectively have a first TFT, a second TFT, a third TFT, a fourth TFT, a fifth TFT, a sixth TFT, a capacitor, and an emission device.

    Active matrix organic light emitting diode circuit and operating method of the same
    8.
    发明授权
    Active matrix organic light emitting diode circuit and operating method of the same 有权
    有源矩阵有机发光二极管电路及其操作方法相同

    公开(公告)号:US09084331B2

    公开(公告)日:2015-07-14

    申请号:US13933200

    申请日:2013-07-02

    Abstract: An active matrix organic light emitting diode (AMOLED) circuit and an operating method thereof are disclosed herein. The AMOLED circuit includes an organic light emitting diode, a switching circuit, a compensating circuit, a driving circuit, and a reset circuit. The compensating circuit is connected to the switching circuit and includes a first capacitor. The driving circuit is configured to be driven by the compensating circuit to provide the organic light emitting diode with a driving current. The reset circuit is connected to both ends of the first capacitor and to a control line. The reset circuit is configured to change the voltage levels on both ends of the first capacitor according to the voltage level on the control line, such that one end of the first capacitor and a reference power supply are conducted and charges stored inside the first capacitor are released.

    Abstract translation: 有源矩阵有机发光二极管(AMOLED)电路及其操作方法在此公开。 AMOLED电路包括有机发光二极管,开关电路,补偿电路,驱动电路和复位电路。 补偿电路连接到开关电路并且包括第一电容器。 驱动电路被配置为由补偿电路驱动以向有机发光二极管提供驱动电流。 复位电路连接到第一电容器的两端和控制线。 复位电路被配置为根据控制线上的电压电平来改变第一电容器的两端的电压电平,使得第一电容器和参考电源的一端被导通,并且存储在第一电容器内的电荷是 释放

    Pixel structure
    9.
    发明授权
    Pixel structure 有权
    像素结构

    公开(公告)号:US08766267B2

    公开(公告)日:2014-07-01

    申请号:US13905073

    申请日:2013-05-29

    CPC classification number: H01L27/1255 H01L27/1214 H01L27/3265 H01L33/0041

    Abstract: A pixel structure including a semiconductor layer having at least one source region and at least one drain region; a first insulating layer covering the semiconductor layer; a first conductive layer on the first insulating layer and including at least one gate; a second insulating layer covering the first conductive layer; a second conductive layer on the second insulating layer and including at least one source electrode, at least one drain electrode and at least one bottom electrode, the source region, the source electrode, the drain region, the drain electrode and the gate forming at least one thin film transistor; a third insulating layer covering the second conductive layer; a third conductive layer on the third insulating layer and including at least one top electrode, the top electrode and the bottom electrode forming at least one capacitor; and a pixel electrode electrically connected to the thin film transistor.

    Abstract translation: 一种像素结构,包括具有至少一个源极区和至少一个漏极区的半导体层; 覆盖半导体层的第一绝缘层; 在所述第一绝缘层上的第一导电层,并且包括至少一个栅极; 覆盖所述第一导电层的第二绝缘层; 在所述第二绝缘层上的第二导电层,并且包括至少一个源电极,至少一个漏电极和至少一个底电极,所述源极区,所述源电极,所述漏极区,所述漏电极和所述栅至少形成 一个薄膜晶体管; 覆盖所述第二导电层的第三绝缘层; 在所述第三绝缘层上的第三导电层,并且包括至少一个顶部电极,所述顶部电极和所述底部电极形成至少一个电容器; 以及电连接到薄膜晶体管的像素电极。

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