Abstract:
A pixel structure including a first scan line, a second scan line, a data line and a power line substantially perpendicular to the first scan line and the second scan line, a reference signal line and an emission signal line substantially parallel with the first scan line and the second scan line, a common thin film transistor (C-TFT), a first pixel unit, and a second pixel unit is provided. The common thin film transistor has a common gate electrode, a common source electrode and a common drain electrode. The common gate electrode is electrically connected to the first scan line, the common drain electrode is electrically connected to the reference signal line. The first and the second pixel units respectively have a first TFT, a second TFT, a third TFT, a fourth TFT, a fifth TFT, a sixth TFT, a capacitor, and an emission device.
Abstract:
A pixel structure including a first scan line, a second scan line, a data line and a power line substantially perpendicular to the first scan line and the second scan line, a reference signal line and an emission signal line substantially parallel with the first scan line and the second scan line, a common thin film transistor (C-TFT), a first pixel unit, and a second pixel unit is provided. The common thin film transistor has a common gate electrode, a common source electrode and a common drain electrode. The common gate electrode is electrically connected to the first scan line, the common drain electrode is electrically connected to the reference signal line. The first and the second pixel units respectively have a first TFT, a second TFT, a third TFT, a fourth TFT, a fifth TFT, a sixth TFT, a capacitor, and an emission device.
Abstract:
A pixel structure including a semiconductor layer having at least one source region and at least one drain region; a first insulating layer covering the semiconductor layer; a first conductive layer on the first insulating layer and including at least one gate; a second insulating layer covering the first conductive layer; a second conductive layer on the second insulating layer and including at least one source electrode, at least one drain electrode and at least one bottom electrode, the source region, the source electrode, the drain region, the drain electrode and the gate forming at least one thin film transistor; a third insulating layer covering the second conductive layer; a third conductive layer on the third insulating layer and including at least one top electrode, the top electrode and the bottom electrode forming at least one capacitor; and a pixel electrode electrically connected to the thin film transistor.
Abstract:
A pixel circuit includes a driving unit, a light emitting unit having a second terminal receiving a second voltage, a compensation capacitor, and first, second and third switches. The first switch has a first terminal connected to the driving unit, and a control terminal for receiving a first control signal. The second switch has a first terminal coupled to the second terminal of the first switch, a second terminal for receiving an initialization signal, and a control terminal for receiving the first control signal. The compensation capacitor has a first terminal coupled to the second terminal of the first switch, and a second terminal coupled to the first terminal of the light emitting unit. The third switch has a first terminal connected to the driving unit, a second terminal coupled to the first terminal of the light emitting unit, and a control terminal for receiving a light emission control signal.
Abstract:
A pixel structure and a driving method thereof are disclosed. The pixel structure includes a first capacitor, an input unit, a compensation unit, a pixel driving unit, a resetting unit, a light-emitting diode, a light-emitting activation unit and a coupling unit. The input unit controls a voltage on a first terminal of the first capacitor according to a first scanning signal and a data signal. The compensation unit coupled to the first capacitor is configured to control voltages on the terminals of the first capacitor according to a second scanning signal. The pixel driving unit is configured to provide a driving current to the light-emitting diode according to a first reference voltage and the voltage on a second terminal of the first capacitor. The coupling unit is coupled to the light-emitting activation unit, the first terminal of the first capacitor, the input unit and the compensation unit.
Abstract:
A pixel structure including a first scan line, a second scan line, a data line and a power line substantially perpendicular to the first scan line and the second scan line, a reference signal line and an emission signal line substantially parallel with the first scan line and the second scan line, a common thin film transistor (C-TFT), a first pixel unit, and a second pixel unit is provided. The common thin film transistor has a common gate electrode, a common source electrode and a common drain electrode. The common gate electrode is electrically connected to the first scan line, the common drain electrode is electrically connected to the reference signal line. The first and the second pixel units respectively have a first TFT, a second TFT, a third TFT, a fourth TFT, a fifth TFT, a sixth TFT, a capacitor, and an emission device.
Abstract:
A pixel structure including a first scan line, a second scan line, a data line and a power line substantially perpendicular to the first scan line and the second scan line, a reference signal line and an emission signal line substantially parallel with the first scan line and the second scan line, a common thin film transistor (C-TFT), a first pixel unit, and a second pixel unit is provided. The common thin film transistor has a common gate electrode, a common source electrode and a common drain electrode. The common gate electrode is electrically connected to the first scan line, the common drain electrode is electrically connected to the reference signal line. The first and the second pixel units respectively have a first TFT, a second TFT, a third TFT, a fourth TFT, a fifth TFT, a sixth TFT, a capacitor, and an emission device.
Abstract:
An active matrix organic light emitting diode (AMOLED) circuit and an operating method thereof are disclosed herein. The AMOLED circuit includes an organic light emitting diode, a switching circuit, a compensating circuit, a driving circuit, and a reset circuit. The compensating circuit is connected to the switching circuit and includes a first capacitor. The driving circuit is configured to be driven by the compensating circuit to provide the organic light emitting diode with a driving current. The reset circuit is connected to both ends of the first capacitor and to a control line. The reset circuit is configured to change the voltage levels on both ends of the first capacitor according to the voltage level on the control line, such that one end of the first capacitor and a reference power supply are conducted and charges stored inside the first capacitor are released.
Abstract:
A pixel structure including a semiconductor layer having at least one source region and at least one drain region; a first insulating layer covering the semiconductor layer; a first conductive layer on the first insulating layer and including at least one gate; a second insulating layer covering the first conductive layer; a second conductive layer on the second insulating layer and including at least one source electrode, at least one drain electrode and at least one bottom electrode, the source region, the source electrode, the drain region, the drain electrode and the gate forming at least one thin film transistor; a third insulating layer covering the second conductive layer; a third conductive layer on the third insulating layer and including at least one top electrode, the top electrode and the bottom electrode forming at least one capacitor; and a pixel electrode electrically connected to the thin film transistor.