公开(公告)号：US20170176856A1

公开(公告)日：2017-06-22

申请号：US14976498

申请日：2015-12-21

申请人： AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.

发明人： Chunwei Chen ,  Weihong Liu ,  Ping-Hung Lu

IPC分类号： G03F7/038 ,  G03F7/32 ,  G03F7/00 ,  G03F7/16 ,  G03F7/20

CPC分类号： G03F7/038 ,  G03F7/0035 ,  G03F7/0048 ,  G03F7/027 ,  G03F7/031 ,  G03F7/033 ,  G03F7/0382 ,  G03F7/095 ,  G03F7/16 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/2022 ,  G03F7/2024 ,  G03F7/2053 ,  G03F7/322

摘要： A composition crosslinkable by broad band UV radiation, which after cross-linking is capable of cold ablation by a UV Excimer Laser emitting between 222 nm and 308 nm, where the composition is comprised of a negative tone resist developable in aqueous base comprising and is also comprised of a conjugated aryl additive absorbing ultraviolet radiation strongly in a range between from about 220 nm to about 310 nm.The present invention also encompasses a process comprising steps a), b) and c) a) coating the composition of claim 1 on a substrate; b) cross-linking the entire coating by irradiation with broadband UV exposure; c) forming a pattern in the cross-linked coating by cold laser ablating with a UV excimer laser emitting between 222 nm and 308 nm. Finally the present invention also encompasses The present invention also encompasses a process comprising steps a′), b′) c′) and d′) a) coating the composition of claim 1 on a substrate; b) cross-linking part of the coating by irradiation with broadband UV exposure through a mask; c) developing the coating with aqueous base removing the unexposed areas of the film, thereby forming a first pattern; d) forming a second pattern in the first pattern by laser cold laser ablating of the first pattern with a UV excimer laser emitting between 222 nm and 308 nm.