公开(公告)号：US07301200B2

公开(公告)日：2007-11-27

申请号：US11376057

申请日：2006-03-15

申请人： Adam I Amali ,  Naresh Thapar

发明人： Adam I Amali ,  Naresh Thapar

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/66734 ,  H01L29/7811

摘要： A trench type power MOSgated device has a plurality of spaced trenches lined with oxide and filled with conductive polysilicon. The tops of the polysilicon fillers are below the top silicon surface and are capped with a deposited oxide the top of which is flush with the top of the silicon. Source regions of short lateral extent extend into the trench walls to a depth below the top of the polysilicon. A trench termination is formed having an insulation oxide liner covered by a polysilicon layer, covered in turn by a deposited oxide.

摘要翻译： 沟槽型功率MOS器件具有衬有氧化物并填充有导电多晶硅的多个隔开的沟槽。 多晶硅填料的顶部位于顶部硅表面之下，并用沉积的氧化物封盖，其顶部与硅的顶部齐平。 短横向范围的源区域延伸到沟槽壁中至多晶硅顶部的深度。 形成具有由多晶硅层覆盖的绝缘氧化物衬垫的沟槽端接，并且依次由被沉积的氧化物覆盖。

公开(公告)号：US07397083B2

公开(公告)日：2008-07-08

申请号：US11982815

申请日：2007-11-05

申请人： Adam I Amali ,  Naresh Thapar

发明人： Adam I Amali ,  Naresh Thapar

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/66734 ,  H01L29/7811

摘要： A trench type power MOSgated device has a plurality of spaced trenches lined with oxide and filled with conductive polysilicon. The tops of the polysilicon fillers are below the top silicon surface and are capped with a deposited oxide the top of which is flush with the top of the silicon. Source regions of short lateral extent extend into the trench walls to a depth below the top of the polysilicon. A trench termination is formed having an insulation oxide liner covered by a polysilicon layer, covered in turn by a deposited oxide.

摘要翻译： 沟槽型功率MOS器件具有衬有氧化物并填充有导电多晶硅的多个隔开的沟槽。 多晶硅填料的顶部位于顶部硅表面之下，并用沉积的氧化物封盖，其顶部与硅的顶部齐平。 短横向范围的源区域延伸到沟槽壁中至多晶硅顶部的深度。 形成具有由多晶硅层覆盖的绝缘氧化物衬垫的沟槽端接，并且依次由被沉积的氧化物覆盖。

公开(公告)号：US07566622B2

公开(公告)日：2009-07-28

申请号：US11446877

申请日：2006-06-05

申请人： Adam I Amali

发明人： Adam I Amali

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734

摘要： A method of fabricating a power semiconductor device in which contact trenches are formed prior to forming the gate trenches.

摘要翻译： 一种在形成栅极沟槽之前形成接触沟槽的功率半导体器件的制造方法。