公开(公告)号：US06417526B2

公开(公告)日：2002-07-09

申请号：US09288395

申请日：1999-04-08

申请人： Adam R. Brown ,  Godefridus A. M. Hurkx ,  Michael S. Peter ,  Hendrik G. A. Huizing ,  Wiebe B. De Boer

发明人： Adam R. Brown ,  Godefridus A. M. Hurkx ,  Michael S. Peter ,  Hendrik G. A. Huizing ,  Wiebe B. De Boer

IPC分类号： H01L29861

CPC分类号： H01L29/885 ,  H01L29/32 ,  Y10S438/979

摘要： The invention relates to a semiconductor device having a rectifying junction (5) which is situated between two (semiconductor) regions (1, 2) of an opposite conductivity type. The second region (2), which includes silicon, is thicker and has a smaller doping concentration than the first region (1) which includes a sub-region comprising a mixed crystal of silicon and germanium. The two regions (1, 2) are each provided with a connection conductor (3, 4). Such a device can very suitably be used as a switching element, in particular as a switching element for a high voltage and/or high power. In the known device, the silicon-germanium mixed crystal is relaxed, leading to the formation of misfit dislocations. These serve to reduce the service life of the minority charge carriers, thus enabling the device to be switched very rapidly. In a device in accordance with the invention, the entire first region (1) comprises a mixed crystal of silicon and germanium, and the germanium content and the thickness of the first region (1) are selected so that the voltage built up in the semiconductor device remains below the level at which misfit dislocations develop. Surprisingly, it has been found that such a device can also be switched very rapidly, even more rapidly than the known device. The absence of misfit dislocations has an additional advantage, namely that the device is very reliable. Misfit dislocations do not develop if the product of said relative deviation in the lattice constant and the thickness of the first region is smaller than or equal to 40 nm %. A safe upper limit for said product is 30 nm %.

摘要翻译： 本发明涉及一种半导体器件，其具有位于相反导电型的两个（半导体）区域（1,2）之间的整流结（5）。 包括硅的第二区域（2）比第一区域（1）更厚并且具有更小的掺杂浓度，该第一区域包括包含硅和锗的混合晶体的子区域。 两个区域（1,2）各自设置有连接导体（3,4）。 这种装置可以非常适合地用作开关元件，特别是用作高电压和/或高功率的开关元件。 在已知的器件中，硅 - 锗混晶被放宽，导致失配位错的形成。 这些用于减少少数电荷载体的使用寿命，从而使装置能够非常快地切换。 在根据本发明的装置中，整个第一区域（1）包括硅和锗的混合晶体，并且选择锗含量和第一区域（1）的厚度，使得在半导体中积聚的电压 器件仍然低于发生错配位错的水平。 令人惊讶的是，已经发现，这种装置也可以非常快速地切换，甚至比已知装置更快地切换。 没有错配位错具有额外的优点，即该装置非常可靠。 如果晶格常数相对偏差和第一区域的厚度的乘积小于或等于40nm％，则不会发生失配位错。 所述产品的安全上限为30nm％。