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    ELECTROSTATIC LIQUID-EJECTION ACTUATION MECHANISM
    4.
    发明申请
    ELECTROSTATIC LIQUID-EJECTION ACTUATION MECHANISM 有权
    静电液滴喷射机构

    公开(公告)号：US20110169894A1

    公开(公告)日：2011-07-14

    申请号：US13119601

    申请日：2008-10-31

    申请人： Adel Jilani ,  Jun Zeng ,  Kenneth James Faase ,  Tony S. Cruz-Uribe ,  Michael G. Monroe

    发明人： Adel Jilani ,  Jun Zeng ,  Kenneth James Faase ,  Tony S. Cruz-Uribe ,  Michael G. Monroe

    IPC分类号： B41J2/04

    CPC分类号： B41J2/14314

    摘要： An electrostatic liquid-ejection actuation mechanism includes a membrane, a frame, and one or more deformable beams. The frame has two sides and a number of cross members that are non-parallel to the two sides. The two sides and the cross members define one or more areas individually corresponding to one or more liquid chambers. The deformable beams are disposed between the membrane and the frame. The deformable beams individually correspond to the liquid chambers, and define a number of slits. Each slit is adjacent to one of the two sides of the frame. The deformable beams have a width that is less than a width of the liquid chambers, due at least to the slits.

    摘要翻译： 静电液体喷射致动机构包括膜，框架和一个或多个可变形梁。 框架具有两侧和多个与两侧不平行的横向构件。 两侧和横向构件限定一个或多个单独对应于一个或多个液体室的区域。 可变形梁设置在膜和框架之间。 可变形梁单独对应于液体室，并且限定许多狭缝。 每个狭缝与框架的两侧之一相邻。 至少对于狭缝，可变形梁的宽度小于液体室的宽度。

    Electrostatic liquid-ejection actuation mechanism
    5.
    发明授权
    Electrostatic liquid-ejection actuation mechanism 有权
    静电液体喷射致动机构

    公开(公告)号：US08573747B2

    公开(公告)日：2013-11-05

    申请号：US13119601

    申请日：2008-10-31

    申请人： Adel Jilani ,  Jun Zeng ,  Kenneth James Faase ,  Tony S. Cruz-Uribe ,  Michael G. Monroe

    发明人： Adel Jilani ,  Jun Zeng ,  Kenneth James Faase ,  Tony S. Cruz-Uribe ,  Michael G. Monroe

    IPC分类号： B41J2/04

    CPC分类号： B41J2/14314

    摘要： An electrostatic liquid-ejection actuation mechanism includes a membrane, a frame, and one or more deformable beams. The frame has two sides and a number of cross members that are non-parallel to the two sides. The two sides and the cross members define one or more areas individually corresponding to one or more liquid chambers. The deformable beams are disposed between the membrane and the frame. The deformable beams individually correspond to the liquid chambers, and define a number of slits. Each slit is adjacent to one of the two sides of the frame. The deformable beams have a width that is less than a width of the liquid chambers, due at least to the slits.

    摘要翻译： 静电液体喷射致动机构包括膜，框架和一个或多个可变形梁。 框架具有两侧和与两侧不平行的多个横向构件。 两侧和横向构件限定一个或多个单独对应于一个或多个液体室的区域。 可变形梁设置在膜和框架之间。 可变形梁单独对应于液体室，并且限定许多狭缝。 每个狭缝与框架的两侧之一相邻。 至少对于狭缝，可变形梁的宽度小于液体室的宽度。

    MEMS device and method of forming MEMS device
    7.
    发明授权
    MEMS device and method of forming MEMS device 有权
    MEMS器件和MEMS器件的形成方法

    公开(公告)号：US07310175B2

    公开(公告)日：2007-12-18

    申请号：US11019780

    申请日：2004-12-21

    申请人： Michael G. Monroe ,  Eric L. Nikkel ,  Dennis M. Lazaroff

    发明人： Michael G. Monroe ,  Eric L. Nikkel ,  Dennis M. Lazaroff

    IPC分类号： H01L21/44 ,  G02B26/08

    CPC分类号： G02B26/0841 ,  B81B3/0083 ,  B81B2201/042 ,  B81B2203/0181 ,  B81B2203/058 ,  Y10S359/904

    摘要： A method of forming a MEMS device includes depositing a conductive material on a substructure, forming a first sacrificial layer over the conductive material, including forming a substantially planar surface of the first sacrificial layer, and forming a first element over the substantially planar surface of the first sacrificial layer, including communicating the first element with the conductive material through the first sacrificial layer. In addition, the method includes forming a second sacrificial layer over the first element, including forming a substantially planar surface of the second sacrificial layer, forming a support through the second sacrificial layer to the first element after forming the second sacrificial layer, including, filling the support, and forming a second element over the support and the substantially planar surface of the second sacrificial layer. As such, the method further includes substantially removing the first sacrificial layer and the second sacrificial layer, thereby supporting the second element relative to the first element with the support.

    摘要翻译： 形成MEMS器件的方法包括在基底结构上沉积导电材料，在导电材料上形成第一牺牲层，包括形成第一牺牲层的基本平坦的表面，以及在第一牺牲层的基本平坦的表面上形成第一元件 第一牺牲层，包括通过第一牺牲层将第一元件与导电材料连通。 另外，该方法包括在第一元件上形成第二牺牲层，包括形成第二牺牲层的基本平坦的表面，在形成第二牺牲层之后，通过第二牺牲层形成支撑件到第一元件，包括填充 支撑件，以及在第二牺牲层的支撑件和基本平坦的表面上形成第二元件。 这样，该方法还包括基本上去除第一牺牲层和第二牺牲层，从而相对于第一元件与支撑件支撑第二元件。

    MEMS device and method of forming MEMS device
    9.
    发明授权
    MEMS device and method of forming MEMS device 失效
    MEMS器件和MEMS器件的形成方法

    公开(公告)号：US06914709B2

    公开(公告)日：2005-07-05

    申请号：US10677825

    申请日：2003-10-02

    申请人： Michael G. Monroe ,  Eric L. Nikkel ,  Michele K. Szepesi ,  Stephen J. Potochnik ,  Richard P. Tomasco

    发明人： Michael G. Monroe ,  Eric L. Nikkel ,  Michele K. Szepesi ,  Stephen J. Potochnik ,  Richard P. Tomasco

    IPC分类号： B81B7/00 ,  G02B26/00 ,  G02B26/08 ,  H01L21/20

    CPC分类号： B81C1/00174 ,  B81B2201/042 ,  G02B26/0841

    摘要： A method of forming a MEMS device includes providing a substructure including a base material and at least one conductive layer formed on a side of the base material, forming a dielectric layer over the at least one conductive layer of the substructure, defining an actuating area for the MEMS device on the dielectric layer, including depositing a conductive material on the dielectric layer and communicating the conductive material with the at least one conductive layer of the substructure through the dielectric layer, forming a sacrificial layer over the conductive material and the dielectric layer, including depositing silicon over the conductive material and the dielectric layer, and forming a substantially planar surface of the silicon, forming an actuating element over the sacrificial layer within the actuating area, including communicating the actuating element with the conductive material of the actuating area through the sacrificial layer, and substantially removing the sacrificial layer between the actuating element and the dielectric layer.

    摘要翻译： 一种形成MEMS器件的方法包括提供一种子结构，其包括基底材料和形成在该基底材料一侧上的至少一个导电层，在该子结构的该至少一个导电层上形成介电层，该电介质层限定用于 所述MEMS器件包括在所述电介质层上沉积导电材料，并且通过所述电介质层将所述导电材料与所述子结构的所述至少一个导电层连接，在所述导电材料和所述电介质层上形成牺牲层， 包括在导电材料和电介质层上沉积硅，以及形成硅的基本平坦的表面，在致动区域内的牺牲层上形成致动元件，包括使致动元件与致动区域的导电材料通过 牺牲层，并且基本上除去牺牲物 在致动元件和电介质层之间。

    MEMS device and method of forming MEMS device
    10.
    发明授权
    MEMS device and method of forming MEMS device 有权
    MEMS器件和MEMS器件的形成方法

    公开(公告)号：US07079301B2

    公开(公告)日：2006-07-18

    申请号：US11092410

    申请日：2005-03-28

    申请人： Michael G. Monroe ,  Eric L. Nikkel ,  Michele K. Szepesi ,  Stephen J. Potochnik ,  Richard P. Tomasco

    发明人： Michael G. Monroe ,  Eric L. Nikkel ,  Michele K. Szepesi ,  Stephen J. Potochnik ,  Richard P. Tomasco

    IPC分类号： G02B26/00

    CPC分类号： B81C1/00174 ,  B81B2201/042 ,  G02B26/0841

    摘要： A method of forming a MEMS device includes providing a substructure including a base material and at least one conductive layer formed on a side of the base material, forming a dielectric layer over the at least one conductive layer of the substructure, defining an actuating area for the MEMS device on the dielectric layer, including depositing a conductive material on the dielectric layer and communicating the conductive material with the at least one conductive layer of the substructure through the dielectric layer, forming a sacrificial layer over the conductive material and the dielectric layer, including depositing silicon over the conductive material and the dielectric layer, and forming a substantially planar surface of the silicon, forming an actuating element over the sacrificial layer within the actuating area, including communicating the actuating element with the conductive material of the actuating area through the sacrificial layer, and substantially removing the sacrificial layer between the actuating element and the dielectric layer.

    摘要翻译： 一种形成MEMS器件的方法包括提供一种子结构，其包括基底材料和形成在该基底材料一侧上的至少一个导电层，在该子结构的该至少一个导电层上形成介电层，该电介质层限定用于 所述MEMS器件包括在所述电介质层上沉积导电材料，并且通过所述电介质层将所述导电材料与所述子结构的所述至少一个导电层连接，在所述导电材料和所述电介质层上形成牺牲层， 包括在导电材料和电介质层上沉积硅，以及形成硅的基本平坦的表面，在致动区域内的牺牲层上形成致动元件，包括使致动元件与致动区域的导电材料通过 牺牲层，并且基本上除去牺牲物 在致动元件和电介质层之间。