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公开(公告)号：US07471441B1
公开(公告)日：2008-12-30
申请号：US11450639
申请日：2006-06-09
申请人： James R. Przybyla , Kenneth Faase , Adel Jilani , James C. McKinnell , Eric L. Nikkel , Arthur Piehl , Bao-Sung Bruce Yeh , Michael G. Monroe
发明人： James R. Przybyla , Kenneth Faase , Adel Jilani , James C. McKinnell , Eric L. Nikkel , Arthur Piehl , Bao-Sung Bruce Yeh , Michael G. Monroe
CPC分类号： G02B26/0841
摘要： Various embodiments of a MEMs structure including flexures movably supporting a reflective face are disclosed.
摘要翻译： 公开了包括可移动地支撑反射面的挠曲的MEM结构的各种实施例。
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公开(公告)号：US07733553B2
公开(公告)日：2010-06-08
申请号：US11233225
申请日：2005-09-21
申请人： Kenneth Faase , Adel Jilani , James C. McKinnell , Eric L. Nikkel , Arthur Piehl , James R. Przybyla , Bao-Sung Bruce Yeh
发明人： Kenneth Faase , Adel Jilani , James C. McKinnell , Eric L. Nikkel , Arthur Piehl , James R. Przybyla , Bao-Sung Bruce Yeh
CPC分类号： G02B26/001
摘要： An electronic light modulator device for at least partially displaying a pixel of an image, the device comprising first and second reflectors defining an optical cavity therebetween, the optical cavity being selective of an electromagnetic wavelength at an intensity by optical interference, the device having at least first and second optical states, at least one of the optical states being tunable and the other not tunable.
摘要翻译： 一种用于至少部分地显示图像的像素的电子光调制器装置，所述装置包括在其间限定光腔的第一和第二反射器，所述光腔具有通过光学干涉的强度的电磁波长的选择性，所述装置至少具有 第一和第二光学状态，光学状态中的至少一个是可调谐的，另一个不可调谐。
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公开(公告)号：US07320899B2
公开(公告)日：2008-01-22
申请号：US10977278
申请日：2004-10-29
申请人： Charles C Haluzak , Kenneth Faase , John R Sterner , Chien-Hua Chen , Kirby Sand , Bao-Sung Bruce Yeh , Michael J. Regan
发明人： Charles C Haluzak , Kenneth Faase , John R Sterner , Chien-Hua Chen , Kirby Sand , Bao-Sung Bruce Yeh , Michael J. Regan
CPC分类号： G02B26/001
摘要： A method of forming a micro-display includes forming a device that includes forming a partially reflecting layer on a first substrate and forming a plate overlying the partially reflecting layer, and adhering the device to a second substrate.
摘要翻译： 形成微显示器的方法包括形成包括在第一基板上形成部分反射层并形成覆盖在部分反射层上的板并且将器件粘附到第二基板的器件。
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公开(公告)号：US07245285B2
公开(公告)日：2007-07-17
申请号：US10833121
申请日：2004-04-28
CPC分类号： G09G3/3466 , G02B26/001
摘要： A pixel device, comprising; a first plate, a second plate disposed under the first plate, and a third plate disposed under the second plate; a first power supply for providing a first voltage to the first plate; a second power supply for providing a second voltage to the second plate; and a third power supply for providing a third voltage to the third plate.
摘要翻译： 一种像素装置，包括： 第一板，设置在第一板下方的第二板和设置在第二板下方的第三板; 用于向所述第一板提供第一电压的第一电源; 用于向所述第二板提供第二电压的第二电源; 以及用于向第三板提供第三电压的第三电源。
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公开(公告)号：US06937502B2
公开(公告)日：2005-08-30
申请号：US10617900
申请日：2003-07-10
CPC分类号： G11C13/0004 , H01L27/2472 , H01L45/06 , H01L45/12 , H01L45/1213 , H01L45/1233 , H01L45/143
摘要： A re-recordable data storage medium is disclosed. The medium in one embodiment includes a phase-changeable layer and an intermediate layer. A junction between the intermediate layer and another layer of the medium provides a conduction barrier under no illumination that is substantially diminished under illumination of the regions of the phase-changeable layer that are in the appropriate phase.
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公开(公告)号：US06902258B2
公开(公告)日：2005-06-07
申请号：US10954065
申请日：2004-09-28
IPC分类号： H01L21/8238 , B41J2/05 , H01L21/00 , H01L23/48
CPC分类号： H01L21/823892 , H01L21/823807 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit (IC) is formed on a substrate. The IC has a first well having a first dopant concentration that includes a second conductivity low-voltage transistor. The IC also has a second well having a dopant concentration equal to the first dopant concentration that includes a first conductivity high-voltage transistor. In addition, the IC has a third well having a second dopant concentration of an opposite type than the first well that includes a first conductivity low-voltage transistor. The first conductivity low-voltage transistor and the second conductivity low-voltage transistor are created without a threshold voltage (Vt) implant.
摘要翻译： 在基板上形成集成电路（IC）。 IC具有第一阱，其具有包括第二导电低压晶体管的第一掺杂剂浓度。 IC还具有掺杂浓度等于包括第一导电高压晶体管的第一掺杂剂浓度的第二阱。 此外，IC具有第三阱，其具有与包括第一导电低压晶体管的第一阱相反类型的第二掺杂剂浓度。 产生第一导电低压晶体管和第二导电低电压晶体管，而没有阈值电压（V OUT）。
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公开(公告)号：US20050041070A1
公开(公告)日：2005-02-24
申请号：US10954065
申请日：2004-09-28
IPC分类号： H01L21/8238 , B41J2/05
CPC分类号： H01L21/823892 , H01L21/823807 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit (IC) is formed on a substrate. The IC has a first well having a first dopant concentration that includes a second conductivity low-voltage transistor. The IC also has a second well having a dopant concentration equal to the first dopant concentration that includes a first conductivity high-voltage transistor. In addition, the IC has a third well having a second dopant concentration of an opposite type than the first well that includes a first conductivity low-voltage transistor. The first conductivity low-voltage transistor and the second conductivity low-voltage transistor are created without a threshold voltage (Vt) implant.
摘要翻译： 在基板上形成集成电路（IC）。 IC具有第一阱，其具有包括第二导电低压晶体管的第一掺杂剂浓度。 IC还具有掺杂浓度等于包括第一导电高压晶体管的第一掺杂剂浓度的第二阱。 此外，IC具有第三阱，其具有与包括第一导电低压晶体管的第一阱相反类型的第二掺杂剂浓度。 产生第一导电低压晶体管和第二导电低压晶体管，而没有阈值电压（Vt）植入。
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公开(公告)号：US06818494B1
公开(公告)日：2004-11-16
申请号：US09817703
申请日：2001-03-26
IPC分类号： H01L218238
CPC分类号： H01L21/823892 , H01L21/823807 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit (IC) is formed on a substrate. The IC has a first well having a first dopant concentration that includes a second conductivity low-voltage transistor. The IC also has a second well having a dopant concentration equal to the first dopant concentration that includes a first conductivity high-voltage transistor. In addition, the IC has a third well having a second dopant concentration of an opposite type than the first well that includes a first conductivity low-voltage transistor. The first conductivity low-voltage transistor and the second conductivity low-voltage transistor are created without a threshold voltage (Vt) implant.
摘要翻译： 在基板上形成集成电路（IC）。 IC具有第一阱，其具有包括第二导电低压晶体管的第一掺杂剂浓度。 IC还具有掺杂浓度等于包括第一导电高压晶体管的第一掺杂剂浓度的第二阱。 此外，IC具有第三阱，其具有与包括第一导电低压晶体管的第一阱相反类型的第二掺杂剂浓度。 产生第一导电低压晶体管和第二导电低压晶体管，而没有阈值电压（Vt）植入。
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公开(公告)号：US06984554B2
公开(公告)日：2006-01-10
申请号：US10666434
申请日：2003-09-18
申请人： Hung Liao , Bao-Sung Bruce Yeh
发明人： Hung Liao , Bao-Sung Bruce Yeh
IPC分类号： H01L21/8249
CPC分类号： H01L27/0605 , H01L21/76264 , H01L21/76297 , H01L21/8256
摘要： A transistor includes a base, a collector, and an emitter comprising a group III/VI semiconductor. Microcircuits having at least one metal oxide semiconductor (MOS) transistor and the previously described transistor are provided. Processes for manufacturing a transistor and a BiMOS microcircuit are also provided.
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公开(公告)号：US06903386B2
公开(公告)日：2005-06-07
申请号：US10172213
申请日：2002-06-14
申请人： Hung Liao , Bao-Sung Bruce Yeh
发明人： Hung Liao , Bao-Sung Bruce Yeh
IPC分类号： H01L21/331 , H01L21/20 , H01L21/762 , H01L21/8222 , H01L21/8248 , H01L21/8249 , H01L21/8256 , H01L27/06 , H01L29/737 , H01L31/0328
CPC分类号： H01L27/0605 , H01L21/76264 , H01L21/76297 , H01L21/8256
摘要： A transistor includes a means for providing a non-silicon-based emitter with a flexible structure to relieve lattice mis-match between the emitter and the base.
摘要翻译： 晶体管包括用于提供具有柔性结构的非硅基发射极以减轻发射极和基极之间的晶格失配的装置。
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