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公开(公告)号：US07684655B2
公开(公告)日：2010-03-23
申请号：US10468938
申请日：2002-02-22
CPC分类号： G02F1/025 , G02F2201/063 , G02F2202/06 , G02F2202/105
摘要： An electro-optic device includes a semiconducting layer in which is formed a waveguide, a modulator formed across the waveguide comprising a p-doped region to one side and an n-doped region to the other side of the waveguide, wherein at least one of the doped regions extends from the base of a recess formed in the semiconducting layer. In this way, the doped regions can extend further into the semiconducting layer and further hinder escape of charge carriers without the need to increase the diffusion distance of the dopant and incur an additional thermal burden on the device. In an SOI device, the doped region can extend to the insulating layer. Ideally, both the p and n-doped regions extend from the base of a recess, but this may be unnecessary in some designs. Insulating layers can be used to ensure that dopant extends from the base of the recess only, giving a more clearly defined doped region. The (or each) recess can have non-vertical sides, such as are formed by v-groove etches, A combination of a vertical sidewall at the base of the recess and a non-vertical sidewall at the opening could be used.
摘要翻译： 电光器件包括其中形成波导的半导体层，跨越波导形成的调制器，其包括一侧的p掺杂区域和到该波导的另一侧的n掺杂区域，其中至少一个 掺杂区域从形成在半导体层中的凹部的基底延伸。 以这种方式，掺杂区域可以进一步延伸到半导体层中，并且进一步阻碍电荷载流子的逸出，而不需要增加掺杂剂的扩散距离并且在器件上引起额外的热负担。 在SOI器件中，掺杂区域可以延伸到绝缘层。 理想地，p和n掺杂区都从凹部的底部延伸，但是在一些设计中这可能是不必要的。 可以使用绝缘层来确保掺杂剂仅仅从凹部的底部延伸，给出更清楚地限定的掺杂区域。 （或每个）凹部可以具有非垂直的侧面，例如由v形凹槽蚀刻形成。可以使用在凹部的底部处的垂直侧壁和开口处的非垂直侧壁的组合。
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公开(公告)号：US06278168B1
公开(公告)日：2001-08-21
申请号：US09349038
申请日：1999-07-07
申请人： Ian Edward Day
发明人： Ian Edward Day
IPC分类号： H01L2714
CPC分类号： G02F1/025 , G02F1/0147
摘要： A thermo-optic semiconductor device has one semiconductor region providing an optical waveguide and an adjacent semiconductor region providing a resistive heater between two doped regions, current may be passed through the resistive heater within the adjacent semiconductor region to heat it and thereby vary the optical characteristics of the waveguide.
摘要翻译： 热光半导体器件具有提供光波导的一个半导体区域和在两个掺杂区域之间提供电阻加热器的相邻半导体区域，电流可以通过相邻半导体区域内的电阻加热器加热，从而改变光学特性 的波导。
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公开(公告)号：US06849914B2
公开(公告)日：2005-02-01
申请号：US10283466
申请日：2002-10-30
申请人： Ian Edward Day
发明人： Ian Edward Day
CPC分类号： G02F1/025 , G02F1/0147
摘要： A thermo-optic semiconductor device has one semiconductor region providing an optical waveguide and an adjacent semiconductor region providing a resistive heater between two doped regions, current may be passed through the resistive heater within the adjacent semiconductor region to heat it and thereby vary the optical characteristics of the waveguide.
摘要翻译： 热光半导体器件具有提供光波导的一个半导体区域和在两个掺杂区域之间提供电阻加热器的相邻半导体区域，电流可以通过相邻半导体区域内的电阻加热器加热，从而改变光学特性 的波导。
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公开(公告)号：US06628852B2
公开(公告)日：2003-09-30
申请号：US09850060
申请日：2001-05-08
IPC分类号： G02B612
CPC分类号： H01L21/761 , G02B6/122 , G02B6/4246 , G02B2006/12126
摘要： An isolation device that can be used for providing optical and electrical isolation between areas of an integrated chip. The isolation device includes three doped elongate regions which form diodes which can be connected in series. The isolation device can be used in optical devices or optical attenuators.
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公开(公告)号：US06304690B1
公开(公告)日：2001-10-16
申请号：US09281971
申请日：1999-03-31
申请人： Ian Edward Day
发明人： Ian Edward Day
IPC分类号： G02B6293
CPC分类号： H04B10/803 , G02B6/29355 , G02B6/4215 , G02B6/43 , H05K1/0274 , H05K1/14
摘要： Apparatus connecting electrical circuit boards (1, 2, 3, . . . N) so each board can communicate with each other. Each board has an optical circuit, which in turn has a transmitter module (T) and a receiver module (R). The transmitter module (T) has electrical to optical converters (11B) for converting electrical signals into optical signals, a wavelength multiplexer (12) for multiplexing the optical signals into a single optical waveguide (12A), and an optical splitter (13) for dividing the multiplexed signal into a plurality of identical signals for transmission to each of the receiver modules (R). The receiver module (R) has an optical selector (14) for selecting signals from the transmission modules (T), a wavelength demultiplexer (21) for demultiplexing the selected signal into signals each of a different wavelength (&lgr;1 . . . &lgr;n), and optical to electrical converters (22B) for converting each of the signals of different wavelengths into an electrical signal.
摘要翻译： 连接电路板（1,2,3，...，N）的设备使得每个电路板可以相互通信。 每个电路板都有一个光电路，它又有一个发射模块（T）和一个接收模块（R）。 发射机模块（T）具有用于将电信号转换为光信号的电 - 光转换器（11B），用于将光信号复用为单个光波导（12A）的波长多路复用器（12）和用于 将复用的信号分成多个相同的信号，以便传输到每个接收机模块（R）。 接收器模块（R）具有用于选择来自发送模块（T）的信号的光选择器（14），用于将所选信号解复用为不同波长（lambd1。lambdn）的信号的波长解复用器（21） 以及用于将不同波长的每个信号转换成电信号的光电转换器（22B）。
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公开(公告)号：US06801702B2
公开(公告)日：2004-10-05
申请号：US09874999
申请日：2001-06-07
申请人： Ian Edward Day
发明人： Ian Edward Day
IPC分类号： G02B610
CPC分类号： G02F1/025 , G02F2201/063 , G02F2201/122 , G02F2202/06 , G02F2202/105
摘要： An electro-optic device is disclosed for altering the density of charge carriers within an integrated optical waveguide. The device includes a substrate, and an integrated optical waveguide extending across the substrate with two doped regions being provided such that an electrical signal can be applied across the doped regions to alter the density of charge carriers within the waveguide. The doped regions can each include a plurality of doped areas spaced apart from each other along the length of the waveguide.
摘要翻译： 公开了一种用于改变集成光波导内的电荷载流子密度的电光器件。 该器件包括衬底和跨越衬底延伸的集成光波导，其中提供两个掺杂区域，使得可以跨越掺杂区域施加电信号以改变波导内的电荷载流子的密度。 掺杂区域可以各自包括沿着波导的长度彼此间隔开的多个掺杂区域。
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公开(公告)号：US06584239B1
公开(公告)日：2003-06-24
申请号：US09655401
申请日：2000-09-05
IPC分类号： G02F1035
CPC分类号： G02F1/025
摘要： A doped slab region is described for use around a ridge waveguide, for controlling the refractive index of the waveguide material. Instead of simply diffusing dopant in from a surface of the slab region adjacent the waveguide, an area of the slab region is etched and dopant diffused in from a side face of the etched region. Thus, the dopant profile is established from a horizontal direction, allowing the profile to be controlled. A simple vertically uniform doping profile can thus be provided, leading to a vertically uniform current density, or an anisotropic wet etch can be applied after the initial etch to provide a profile which concentrates the current density at a selected height in the slab region.
摘要翻译： 描述了用于围绕脊波导使用的掺杂平板区域，用于控制波导材料的折射率。 代替从邻近波导的板坯区域的表面简单地扩散掺杂剂，蚀刻板区域的区域，并且掺杂剂从蚀刻区域的侧面扩散。 因此，从水平方向建立掺杂剂分布，允许对轮廓进行控制。 因此可以提供简单的垂直均匀的掺杂分布，导致垂直均匀的电流密度，或者可以在初始蚀刻之后施加各向异性湿蚀刻以提供将电流密度集中在板区域中选定高度处的轮廓。
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