公开(公告)号：US20230054419A1

公开(公告)日：2023-02-23

申请号：US17796609

申请日：2021-01-29

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chien-Li CHEN ,  Steven R. WALTHER

IPC: H01L21/66 ,  G01B11/08 ,  G01K3/00 ,  G01S17/08 ,  G01S7/481 ,  G01B7/06 ,  H01L21/265 ,  H01L21/67

Abstract: The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station.

公开(公告)号：US20210242054A1

公开(公告)日：2021-08-05

申请号：US17162108

申请日：2021-01-29

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chien-Li CHEN ,  Steven R. WALTHER

IPC: H01L21/67 ,  H01L21/265 ,  H01L21/66 ,  H01L21/324 ,  C23C14/48 ,  C23C14/54

Abstract: The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station.