公开(公告)号：US12009025B2

公开(公告)日：2024-06-11

申请号：US17358527

申请日：2021-06-25

Applicant: Advanced Micro Devices, Inc.

Inventor： Tawfik Ahmed ,  Andrew J. Robison ,  Russell J. Schreiber

IPC: G11C11/419 ,  G11C11/412 ,  G11C11/418

CPC classification number: G11C11/419 ,  G11C11/412 ,  G11C11/418

Abstract: A method for accessing a memory cell includes enabling precharging of a bit line of the memory cell before a next access of the memory cell. The method includes disabling the precharging after a first interval if the next access is a write. The method includes disabling the precharging after a second interval if the next access is a read. The first interval is shorter than the second interval.

公开(公告)号：US20220415386A1

公开(公告)日：2022-12-29

申请号：US17358527

申请日：2021-06-25

Applicant: Advanced Micro Devices, Inc.

Inventor： Tawfik Ahmed ,  Andrew J. Robison ,  Russell J. Schreiber

IPC: G11C11/419 ,  G11C11/418 ,  G11C11/412

Abstract: A method for accessing a memory cell includes enabling precharging of a bit line of the memory cell before a next access of the memory cell. The method includes disabling the precharging after a first interval if the next access is a write. The method includes disabling the precharging after a second interval if the next access is a read. The first interval is shorter than the second interval.