公开(公告)号：US20180374811A1

公开(公告)日：2018-12-27

申请号：US15630843

申请日：2017-06-22

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chung-Chieh YANG ,  Sheng-Ming WANG ,  Tien-Szu CHEN

IPC: H01L23/00

CPC classification number: H01L24/09 ,  H01L23/367 ,  H01L23/4334 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/16 ,  H01L24/48 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/48227 ,  H01L2924/1433 ,  H01L2924/15192 ,  H01L2924/15313 ,  H01L2924/19107 ,  H01L2924/30101 ,  H01L2924/351

Abstract: At least some embodiments of the present disclosure relate to a semiconductor device package. The semiconductor device package includes a carrier having a first surface and including a power layer adjacent to the first surface of the carrier, an electrical component disposed on the first surface of the carrier, and a conductive element disposed on the first surface of the carrier. The electrical component is electrically connected to the power layer. The conductive element is electrically connected to the power layer. The conductive element, the power layer, and the electrical component form a power-transmission path.