公开(公告)号：US20170243813A1

公开(公告)日：2017-08-24

申请号：US15049352

申请日：2016-02-22

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Jun-Chieh WU ,  Yu-Hsiang CHAO ,  Chung-Yao CHANG ,  Chun-Cheng KUO

IPC: H01L23/498 ,  H01L25/065 ,  H01L23/31 ,  H01L21/56 ,  H01L21/48

CPC classification number: H01L23/49811 ,  H01L21/4853 ,  H01L21/563 ,  H01L23/15 ,  H01L23/3128 ,  H01L23/315 ,  H01L23/49827 ,  H01L23/5384 ,  H01L23/5385 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/16227 ,  H01L2224/48227 ,  H01L2225/06572 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/1815

Abstract: The present disclosure relates to a semiconductor device and a method for manufacturing the same. The semiconductor device includes a substrate, a first package body and at least one connecting element. The substrate has a first surface. The first package body is disposed adjacent to the first surface of the substrate, and defines at least one cavity. The connecting element is disposed adjacent to the first surface of the substrate and in a corresponding cavity. A space is defined between a periphery surface of a portion of the connecting element and a sidewall of a portion of the cavity. An end portion of the connecting element extends beyond an outermost surface of the first package body.