公开(公告)号：US20140167200A1

公开(公告)日：2014-06-19

申请号：US14133889

申请日：2013-12-19

Applicant: Agency for Science, Technology and Research

Inventor： Fei Sun ,  Ning Duan ,  Patrick Guo-Qiang Lo

IPC: H01L27/144 ,  H01L31/18

CPC classification number: H01L31/107 ,  H01L27/14609 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14685

Abstract: According to embodiments of the present invention, a photodetector is provided. The photodetector includes a substrate having a first side and a second side opposite to the first side, the substrate being adapted to receive light incident on the photodetector on the first side of the substrate, a plurality of cells formed in the substrate, and at least one trench defined by a first sidewall and a second sidewall, wherein a spacing between the first sidewall and the second sidewall increases in a direction from the first side of the substrate towards the second side, wherein a respective trench of the at least one trench is arranged in between adjacent cells of the plurality of cells. According to further embodiments of the present invention, a method for forming a photodetector is also provided.

Abstract translation: 根据本发明的实施例，提供了一种光电检测器。 光检测器包括具有第一侧和与第一侧相对的第二侧的基板，该基板适于接收入射在基板的第一侧上的光电检测器上的光，在基板中形成的多个单元，至少 由第一侧壁和第二侧壁限定的一个沟槽，其中第一侧壁和第二侧壁之间的间隔在从衬底的第一侧朝向第二侧的方向上增加，其中至少一个沟槽的相应沟槽为 布置在多个单元的相邻单元之间。 根据本发明的另外的实施例，还提供了一种用于形成光电检测器的方法。

公开(公告)号：US09087936B2

公开(公告)日：2015-07-21

申请号：US13760235

申请日：2013-02-06

Applicant: Agency for Science, Technology and Research

Inventor： Fei Sun ,  Ning Duan ,  Guo-Qiang Patrick Lo

IPC: H01L29/49 ,  H01L31/0224 ,  H01L31/107 ,  H01L27/146

CPC classification number: H01L31/022408 ,  H01L27/14658 ,  H01L31/022416 ,  H01L31/107

Abstract: According to embodiments of the present invention, a semiconductor photomultiplier device is provided. The semiconductor photomultiplier device includes a substrate having a front side and a back side, a common electrode of a first conductivity type adjacent to the back side, and a cell including an active region of a second conductivity type adjacent to the front side, and a contact region of the second conductivity type adjacent to the front side, the contact region being spaced apart from the active region by a separation region.

Abstract translation: 根据本发明的实施例，提供一种半导体光电倍增器装置。 半导体光电倍增器装置包括具有正面和背面的基板，与背面相邻的第一导电类型的公共电极和包括与前侧相邻的第二导电类型的有源区的单元，以及 与前侧相邻的第二导电类型的接触区域，接触区域通过分离区域与有源区域间隔开。

公开(公告)号：US20140159180A1

公开(公告)日：2014-06-12

申请号：US14099782

申请日：2013-12-06

Applicant: Agency for Science, Technology and Research

Inventor： Fei Sun ,  Ning Duan ,  Patrick Guo-Qiang Lo

IPC: H01L29/8605 ,  H01L31/10

CPC classification number: H01L29/8605 ,  H01L27/1446 ,  H01L31/107

Abstract: According to embodiments of the present invention, a semiconductor resistor structure is provided. The semiconductor resistor structure includes a substrate, a first region of a first conductivity type in the substrate, a second region of the first conductivity type in the substrate, the first region and the second region arranged one over the other, and an intermediate region of a second conductivity type in between the first region and the second region, wherein at least one gap is defined through the intermediate region and overlapping with the first region and the second region. According to further embodiments of the present invention, a semiconductor photomultiplier device is also provided.

Abstract translation: 根据本发明的实施例，提供了半导体电阻器结构。 半导体电阻结构包括衬底，衬底中的第一导电类型的第一区域，衬底中第一导电类型的第二区域，第一区域和第二区域彼此排列，以及中间区域 在第一区域和第二区域之间的第二导电类型，其中至少一个间隙通过中间区域限定并与第一区域和第二区域重叠。 根据本发明的另外的实施例，还提供了一种半导体光电倍增器装置。

公开(公告)号：US20130200477A1

公开(公告)日：2013-08-08

申请号：US13760235

申请日：2013-02-06

Applicant: Agency for Science, Technology and Research

Inventor： Fei Sun ,  Ning Duan ,  Guo-Qiang Patrick Lo

IPC: H01L31/0224

CPC classification number: H01L31/022408 ,  H01L27/14658 ,  H01L31/022416 ,  H01L31/107

Abstract: According to embodiments of the present invention, a semiconductor photomultiplier device is provided. The semiconductor photomultiplier device includes a substrate having a front side and a back side, a common electrode of a first conductivity type adjacent to the back side, and a cell including an active region of a second conductivity type adjacent to the front side, and a contact region of the second conductivity type adjacent to the front side, the contact region being spaced apart from the active region by a separation region.

Abstract translation: 根据本发明的实施例，提供一种半导体光电倍增器装置。 半导体光电倍增器装置包括具有正面和背面的基板，与背面相邻的第一导电类型的公共电极和包括与前侧相邻的第二导电类型的有源区的单元，以及 与前侧相邻的第二导电类型的接触区域，接触区域通过分离区域与有源区域间隔开。