公开(公告)号：US20150255547A1

公开(公告)日：2015-09-10

申请号：US14389043

申请日：2013-03-28

Applicant: Agency for Science, Technology and Research

Inventor： Li Yuan ,  Patrick Guo Qiang Lo ,  Haifeng Sun ,  Kean Boon Lee ,  Weizhu Wang ,  Susai Lawrence Selvaraj

IPC: H01L29/205 ,  H01L29/201 ,  H01L29/872 ,  H01L29/06 ,  H01L29/40 ,  H01L29/20 ,  H01L29/778

CPC classification number: H01L29/872 ,  H01L27/0605 ,  H01L27/0629 ,  H01L29/0646 ,  H01L29/0657 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/517 ,  H01L29/66219 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7788 ,  H01L29/861

Abstract: Structures for III-nitride GaN high electron mobility transistors (HEMT), method for fabricating for GaN devices and integrated chip-level power systems using the GaN devices are provided. The GaN HEMT structure includes a substrate, an AlGaN/GaN heterostructure grown on the substrate, and a normally-off GaN device fabricated on the AlGaN/GaN heterostructure. The AlGaN/GaN heterostructure includes a GaN buffer layer and an AlGaN barrier layer. The integrated chip-level power system includes a substrate, an AlGaN/GaN heterostructure layer grown on the substrate and a plurality of GaN devices. The AlGaN/GaN heterostructure layer includes a GaN buffer layer and an AlGaN barrier layer and is formed into mesa areas and valley areas. Each of the plurality of GaN devices are fabricated on a separate one of the mesa areas.

Abstract translation: 提供了III族氮化物GaN高电子迁移率晶体管（HEMT）的结构，GaN器件的制造方法和使用GaN器件的集成芯片级电力系统。 GaN HEMT结构包括衬底，在衬底上生长的AlGaN / GaN异质结构和在AlGaN / GaN异质结构上制造的常关GaN器件。 AlGaN / GaN异质结构包括GaN缓冲层和AlGaN势垒层。 集成芯片级电力系统包括衬底，在衬底上生长的AlGaN / GaN异质结构层和多个GaN器件。 AlGaN / GaN异质结构层包括GaN缓冲层和AlGaN阻挡层，并且形成在台面区域和谷区域中。 多个GaN器件中的每一个被制造在独立的台面区域之一上。