公开(公告)号：US20230338904A1

公开(公告)日：2023-10-26

申请号：US17924298

申请日：2021-05-12

Applicant: Agency for Science, Technology and Research

Inventor： Xuecheng Dong ,  Eng Toon Saw ,  Kun Liang Ang ,  Wei He

IPC: B01D71/02 ,  B01D69/10 ,  B01D67/00 ,  B01D69/04

CPC classification number: B01D71/027 ,  B01D69/108 ,  B01D67/0051 ,  B01D67/0076 ,  B01D69/04 ,  B01D2323/081 ,  B01D2323/216 ,  B01D2323/24 ,  B01D2323/48

Abstract: A method of producing a silicalite membrane, which includes heating an aqueous solution that includes a dopant precursor and structure-directing template agents to form silicalite seeds incorporated with a dopant, depositing a buffer layer on a ceramic substrate prior to depositing the silicalite seeds on the buffer layer, contacting the ceramic substrate with a solution including the silicalite seeds to form a silicalite layer from the silicalite seeds on the ceramic substrate, and removing the structure-directing template agents to form the silicalite membrane, where the silicalite layer includes silicalite crystals incorporated with a dopant and each of the silicalite crystals has a hollow structure which forms the pores of the silicalite layer. The silicalite membrane includes a ceramic substrate having a buffer layer formed thereon, and a silicalite layer formed on the buffer layer, where the silicalite layer includes silicalite crystals incorporated with a dopant.

公开(公告)号：US20180012652A1

公开(公告)日：2018-01-11

申请号：US15543923

申请日：2016-01-26

Applicant: Agency for Science, Technology and Research

Inventor： Hongxin Yang ,  Minghua Li ,  Wei He ,  Yu Jiang ,  Fei Li

IPC: G11C13/00 ,  H01L45/00 ,  H01L27/24

CPC classification number: G11C13/003 ,  G11C13/0021 ,  G11C13/0038 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0052 ,  G11C2013/0092 ,  G11C2213/15 ,  G11C2213/76 ,  H01L27/2409 ,  H01L27/2418 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145

Abstract: Embodiments provide a selector device for selecting a memory cell. The selector device includes a first electrode; a second electrode; and a switching layer sandwiched between the first electrode and the second electrode. The switching layer includes at least one metal rich layer and at least one chalcogenide rich layer. The metal rich layer includes at least one of a metal or a metal compound, wherein metal content of the metal rich layer is greater than 50 at. %. The chalcogenide content of the chalcogenide rich layer is greater than 50 at. %.

公开(公告)号：US10388371B2

公开(公告)日：2019-08-20

申请号：US15543923

申请日：2016-01-26

Applicant: Agency for Science, Technology and Research

Inventor： Hongxin Yang ,  Minghua Li ,  Wei He ,  Yu Jiang ,  Fei Li

IPC: G11C13/00 ,  H01L45/00 ,  H01L27/24

Abstract: Embodiments provide a selector device for selecting a memory cell. The selector device includes a first electrode; a second electrode; and a switching layer sandwiched between the first electrode and the second electrode. The switching layer includes at least one metal rich layer and at least one chalcogenide rich layer. The metal rich layer includes at least one of a metal or a metal compound, wherein metal content of the metal rich layer is greater than 50 at. %. The chalcogenide content of the chalcogenide rich layer is greater than 50 at. %.