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公开(公告)号:US20230285911A1
公开(公告)日:2023-09-14
申请号:US18008375
申请日:2021-05-27
发明人: Vanina TODOROVA , Herve DULPHY
IPC分类号: B01F23/10 , B01F35/221 , B01F35/21 , B01F35/22 , B01F35/83
CPC分类号: B01F23/191 , B01F35/2211 , B01F35/2111 , B01F35/2202 , B01F35/2132 , B01F35/83 , B01F2101/58
摘要: Plant for delivering a gas mixture to a silicon wafer doping unit comprising a source of a dopant gas (1), a source of a carrier gas (2), a mixer device (3) connected to the container of dopant gas (1) and to the source of carrier gas (2), a first flow regulator member (41) and a second flow regulator member (42) for regulating the flows of the dopant gas (1) and of the carrier gas (2) towards the mixer device (3), a control unit (5) for controlling the first and second flow regulator members (41, 42) so as to adjust the first flow rate setpoint (D1) and the second flow rate setpoint (D2) in proportions determined as a function of at least one target content (C1, C2) of dopant gas (1) and/or carrier gas (2) in the mixture, a buffer tank (7), a delivery line (6) for delivering the mixture to a doping unit (10) with a consumption flow rate (DC), at least one measurement sensor (8) for measuring a physical quantity, the variation of which is representative of a variation in the consumption flow rate (DC) and for providing a first measurement signal, the control unit (5) being connected to the sensor (8) and configured to produce a first control signal from the first measurement signal, the flow regulator members (41, 42) being configured to adjust the first and second flow rate setpoints (D1, D2) in response to said first control signal.