摘要:
Disclosed herein is a solid-state imaging device employing a plurality of unit pixels each having an opto-electric conversion section configured to convert incident light into electric charge and an electric-charge holding section configured to hold a signal voltage representing the electric charge produced by the opto-electric conversion section, the solid-state imaging device further including a read section and a control section.
摘要:
Disclosed herein is a solid-state imaging device, including: a pixel array unit configured to be formed by two-dimensionally arranging unit pixels each having a photoelectric converter, a charge-voltage converter, a reset transistor to set the charge-voltage converter to a predetermined potential, and an amplification transistor to read out a signal converted by the charge-voltage converter; a signal processor configured to process a signal output from the unit pixel by using a reference voltage; and a setter configured to set a reset level obtained from a second unit pixel from which a signal level has been already read out as the reference voltage of the signal processor before readout of a signal level based on a signal charge accumulated or retained in the charge-voltage converter from a first unit pixel.
摘要:
A solid-state imaging device includes: a CMOS image sensor including a plurality of pixels disposed in an array and each including a light reception element, a discharging unit, a charge accumulation section, a transfer unit, a reset unit, an amplification unit, and a selection unit; and a control unit adapted to generate a selection pulse for rendering the selection unit operative to control operation of the CMOS image sensor.
摘要:
Disclosed herein is a solid-state image pickup apparatus, including a pixel array section in which a unit pixel including a photoelectric conversion section and a charge detection section for detecting charge generated by photoelectric conversion by the photoelectric conversion section is disposed; a driving section adapted to carry out driving of reading out a signal of the unit pixel divisionally by twice as a first signal and a second signal; and a signal processing section adapted to set the first signal read out first from the unit pixel as a reference voltage for a processable input voltage range of the signal processing section, adjust the reference voltage so that the first and second signals may be included in the input voltage range and carry out signal processing for the first and second signals using the adjusted reference voltage.
摘要:
Disclosed herein is a solid-state imaging device, including: a pixel array unit configured to be formed by two-dimensionally arranging unit pixels each having a photoelectric converter, a charge-voltage converter, a reset transistor to set the charge-voltage converter to a predetermined potential, and an amplification transistor to read out a signal converted by the charge-voltage converter; a signal processor configured to process a signal output from the unit pixel by using a reference voltage; and a setter configured to set a reset level obtained from a second unit pixel from which a signal level has been already read out as the reference voltage of the signal processor before readout of a signal level based on a signal charge accumulated or retained in the charge-voltage converter from a first unit pixel.
摘要:
A solid-state imaging device includes: a CMOS image sensor including a plurality of pixels disposed in an array and each including a light reception element, a discharging unit, a charge accumulation section, a transfer unit, a reset unit, an amplification unit, and a selection unit; and a control unit adapted to generate a selection pulse for rendering the selection unit operative to control operation of the CMOS image sensor.
摘要:
Disclosed herein is a solid-state image taking apparatus, includes: a pixel array section including unit pixels laid out two-dimensionally to form a matrix to serve as unit pixels each employing an opto-electric conversion device, a transfer transistor, a first electric-charge accumulation section, a read transistor, a second electric-charge accumulation section, a reset transistor, and an amplification transistor; a driving section; and a correction section.
摘要:
Disclosed herein is a solid-state image taking apparatus, includes: a pixel array section including unit pixels laid out two-dimensionally to form a matrix to serve as unit pixels each employing an opto-electric conversion device, a transfer transistor, a first electric-charge accumulation section, a read transistor, a second electric-charge accumulation section, a reset transistor, and an amplification transistor; a driving section; and a correction section.
摘要:
Disclosed herein is a solid-state image pickup apparatus, including a pixel array section in which a unit pixel including a photoelectric conversion section and a charge detection section for detecting charge generated by photoelectric conversion by the photoelectric conversion section is disposed; a driving section adapted to carry out driving of reading out a signal of the unit pixel divisionally by twice as a first signal and a second signal; and a signal processing section adapted to set the first signal read out first from the unit pixel as a reference voltage for a processable input voltage range of the signal processing section, adjust the reference voltage so that the first and second signals may be included in the input voltage range and carry out signal processing for the first and second signals using the adjusted reference voltage.
摘要:
Disclosed herein is a solid-state imaging device employing a plurality of unit pixels each having an opto-electric conversion section configured to convert incident light into electric charge and an electric-charge holding section configured to hold a signal voltage representing the electric charge produced by the opto-electric conversion section, the solid-state imaging device further including a read section and a control section.