Communication network system and method of controlling a communication
network
    1.
    发明授权
    Communication network system and method of controlling a communication network 失效
    通信网络系统和控制通信网络的方法

    公开(公告)号:US5042027A

    公开(公告)日:1991-08-20

    申请号:US404535

    申请日:1989-09-08

    摘要: A communication network system includes a communication line, a plurality of communication stations each having a node coupled to the communication line and a network controller coupled to the stations for controlling routing for communication messages between nodes. In one embodiment, the messages are sent from plural terminals connected with each node along with communication performance prerequisites. The communication performance prerequisites for a communication message are discriminated in the node which receives the message. Traffic in various routes between the nodes is continually measured in the communication stations and the measuring results are stored in a database storage unit. Future traffic in the various routes is predicted on the basis of the information on the continually measured traffic by the use of a predetermined algorithm and stored in the storage unit for use in determination of routes for communication messages on the basis of the result of the communication performance prerequisites discrimination and predetermined criteria with respect to the updated information on the predicted traffic in the storage unit.

    摘要翻译: 通信网络系统包括通信线路,多个通信站,每个通信站具有耦合到通信线路的节点,以及耦合到该站点的网络控制器,用于控制节点之间的通信消息的路由。 在一个实施例中,从与每个节点连接的多个终端以及通信性能先决条件发送消息。 通信消息的通信性能先决条件在接收消息的节点中被区分。 在通信站中连续测量节点之间的各种路由的流量,并将测量结果存储在数据库存储单元中。 基于通过使用预定算法的连续测量的业务的信息来预测各种路线中的未来业务,并且存储在存储单元中以用于基于通信的结果确定通信消息的路由 性能先决条件判定和关于存储单元中预测业务量的更新信息的预定标准。

    Semiconductor devices and their fabrication methods
    2.
    发明授权
    Semiconductor devices and their fabrication methods 失效
    半导体器件及其制造方法

    公开(公告)号:US06781202B2

    公开(公告)日:2004-08-24

    申请号:US10303884

    申请日:2002-11-26

    IPC分类号: H01L2976

    摘要: A higher-performance short channel MOS transistor with enhanced resistance to soft errors caused by exposure to high-energy rays is realized. At the time of forming a deep source/drain diffusion layer region at high density, an intermediate region of a density higher than that of impurity of a semiconductor substrate is formed between the source/drain diffusion layer and the semiconductor substrate of a conduction type opposite to that of the source/drain diffusion layer. The intermediate region is formed with a diffusion window for forming the source/drain, an intermediate layer of uniform concentration and uniform width can be realized at low cost.

    摘要翻译: 实现了通过暴露于高能射线引起的对软误差的增强的抗性的更高性能的短通道MOS晶体管。 在以高密度形成深源极/漏极扩散层区域时,在源极/漏极扩散层与相反的导电类型的半导体衬底之间形成密度高于半导体衬底的密度的中间区域 与源极/漏极扩散层的相反。 中间区形成有用于形成源极/漏极的扩散窗口,可以以低成本实现均匀浓度和均匀宽度的中间层。