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    Process for producing glycidyl acrylate or glycidyl methacrylate
    2.
    发明授权
    Process for producing glycidyl acrylate or glycidyl methacrylate 失效
    制备丙烯酸缩水甘油酯或甲基丙烯酸缩水甘油酯的方法

    公开(公告)号：US5527927A

    公开(公告)日：1996-06-18

    申请号：US438345

    申请日：1995-05-10

    申请人： Masahiro Kurokawa ,  Akihiro Honma ,  Tsuyoshi Isozaki

    发明人： Masahiro Kurokawa ,  Akihiro Honma ,  Tsuyoshi Isozaki

    IPC分类号： C07D301/32 ,  B01J27/26 ,  B01J31/02 ,  C07B61/00 ,  C07D303/16 ,  C07D301/00 ,  C07D301/36

    CPC分类号： C07D303/16

    摘要： There are disclosed a process for producing glycidyl acrylate or glycidyl methacrylate by the transesterification of glycidol and methyl methacrylate, etc. which process comprises carrying out the transesterification in the presence of a polymerization inhibitor by using, as a catalyst, a quaternary ammonium salt represented by the general formula (I) or a quaternary phosphonium salt represented by the general formula (II)(R.sup.1 R.sup.2 R.sup.3 R.sup.4)NX (I)(R.sup.1 R.sup.2 R.sup.3 R.sup.4)PX (II)wherein R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are each an alkyl group having 1 to 20 carbon atoms, or the like, and X is a cyanide ion, cyanate ion or the like to complete the reaction; thereafter arresting the reaction by adding a catalyst deactivator represented by the general formula (III)SB (iii)wherein S is a sulfonic acid or a heteropolyacid and B is an alkali metal excluding potassium or an alkaline earth metal; and distilling away unreacted methyl methacrylate, etc. under reduced pressure and two similar modified processes. The processes can produce highly pure glycidyl methacrylate, etc. substantially free from a chlorine component and the processes can enhance the conversion of glycidol without lowering the purity and yield of the objective product.

    摘要翻译： 公开了通过缩水甘油和甲基丙烯酸甲酯等的酯交换反应生产丙烯酸缩水甘油酯或甲基丙烯酸缩水甘油酯的方法，该方法包括在聚合抑制剂存在下进行酯交换反应，所述方法是使用作为催化剂的季铵盐 通式（I）或由通式（II）表示的季鏻盐（R1R2R3R4）NX（Ⅰ）（R1R2R3R4）PX（Ⅱ）其中R1，R2，R3和R4各自为1〜20的烷基 碳原子等，X是氰离子，氰酸根离子等，以完成反应; 然后通过加入由通式（III）SB（ⅲ）表示的催化剂失活剂来阻止反应，其中S是磺酸或杂多酸，B是不包括钾或碱土金属的碱金属; 并在减压下蒸馏未反应的甲基丙烯酸甲酯等，并进行两种类似的改性方法。 该方法可以产生基本上不含氯组分的高纯度甲基丙烯酸缩水甘油酯等，并且该方法可以增加缩水甘油的转化，而不降低目标产物的纯度和产率。

    Multi-axis injection molding apparatus
    3.
    发明授权
    Multi-axis injection molding apparatus 失效
    多轴注塑设备

    公开(公告)号：US08512032B2

    公开(公告)日：2013-08-20

    申请号：US13032114

    申请日：2011-02-22

    申请人： Akihiro Honma ,  Kenji Hayashi

    发明人： Akihiro Honma ,  Kenji Hayashi

    IPC分类号： B29C45/22

    CPC分类号： B29C45/54

    摘要： A multi-axis injection molding apparatus is provided with a fixed platen, a movable platen, a plurality of injection devices, and an intermediate platen disposed between a fixed mold and the fixed platen. The intermediate platen includes a runner adapted to supply a molten resin from a single in-line injection apparatus to the plurality of injection devices.

    摘要翻译： 多轴注射成型装置设置有固定的压板，可动压板，多个注射装置和设置在固定模具和固定压板之间的中间压板。 中间压板包括适于将熔融树脂从单个在线注射装置供应到多个注射装置的流道。

    Process for producing glycidyl ester of acrylic acid or methacrylic acid
    4.
    发明授权
    Process for producing glycidyl ester of acrylic acid or methacrylic acid 失效
    制备丙烯酸或甲基丙烯酸缩水甘油酯的方法

    公开(公告)号：US5750739A

    公开(公告)日：1998-05-12

    申请号：US687053

    申请日：1996-08-07

    申请人： Tsuyoshi Isozaki ,  Masahiro Kurokawa ,  Akihiro Honma

    发明人： Tsuyoshi Isozaki ,  Masahiro Kurokawa ,  Akihiro Honma

    IPC分类号： C07D301/30 ,  B01J31/02 ,  C07B61/00 ,  C07D301/27 ,  C07D303/16

    CPC分类号： C07D303/16

    摘要： There is disclosed a process for producing a glycidyl ester of acrylic acid or methacrylic acid which comprises the steps of neutralizing acrylic acid or methacrylic acid with a carbonate or a bicarbonate of an alkali metal in an excess amount of epichlorohydrin while an oxygen-containing gas is blown into the liquid reaction system; subjecting water formed by the neutralization and epichlorohydrin to azeotropic distillation to discharge them outside the reaction system and to form an alkali metal salt of acrylic acid or methacrylic acid; adding a quaternary ammonium salt as a catalyst to the reaction system to react the alkali metal salt of the acid with the epichlorohydrin and thus synthesize the glycidyl ester of the acid; cooling the liquid reaction product while recovering part of the excess epichlorohydrin under reduced pressure; adding aqueous solution of an alkali hydroxide to the liquid reaction product to separate into aqueous layer and organic layer; adding a catalyst deactivator to the organic phase; and subsequently distilling the organic layer to separate the glycidyl ester of the acid while blowing an oxygen-containing gas into the organic layer. The above process makes it possible to efficiently produce a highly pure glycidyl ester of acrylic acid or methacrylic acid in high yield with minimized contents of impurities.

    摘要翻译： 公开了一种制备丙烯酸或甲基丙烯酸的缩水甘油酯的方法，该方法包括以下步骤：用过量表氯醇的碱金属的碳酸盐或碳酸氢盐中和丙烯酸或甲基丙烯酸，同时含氧气体为 吹入液体反应系统; 将由中和产生的水和表氯醇进行共沸蒸馏，将其排出反应体系外，形成丙烯酸或甲基丙烯酸的碱金属盐; 向反应体系中加入季铵盐作为催化剂，使酸的碱金属盐与表氯醇反应，合成酸的缩水甘油酯; 冷却液体反应产物，同时在减压下回收部分过量表氯醇; 将碱性氢氧化物的水溶液加入到液体反应产物中以分离成水层和有机层; 向有机相中加入催化剂失活剂; 随后蒸出有机层以分离酸的缩水甘油酯，同时将含氧气体吹入有机层。 上述方法使得可以以最小化的杂质含量以高产率有效地制备丙烯酸或甲基丙烯酸的高纯度缩水甘油酯。

    Method for manufacturing semiconductor light-emitting device
    5.
    发明授权
    Method for manufacturing semiconductor light-emitting device 有权
    半导体发光元件的制造方法

    公开(公告)号：US08936950B2

    公开(公告)日：2015-01-20

    申请号：US13636392

    申请日：2011-03-14

    申请人： Naoki Nakajo ,  Masao Kamiya ,  Akihiro Honma

    发明人： Naoki Nakajo ,  Masao Kamiya ,  Akihiro Honma

    IPC分类号： H01L21/00 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/00

    CPC分类号： H01L33/42 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

    摘要： To improve light emission efficiency and reliability.A transparent conductive film 10 is formed on an entire top surface of a second semiconductor layer 108, and a photo-resist is applied thereon. When removing the photo-resist on the upper surface corresponding to an electrode forming part 16 of a first semiconductor layer 104, the photo-resist is removed to be gradually thinned at a boundary of a portion to be removed. The transparent conductive film is wet etched using the remaining photo-resist as a mask to expose a part of the second semiconductor layer. Dry etching is performed using the remaining photo-resist and the transparent conductive film as a mask to expose the electrode forming part of the first semiconductor layer. A portion of the transparent conductive film exposed in the dry etching using the remaining photo-resist as a mask is wet etched. The remaining photo-resist is eliminated.

    摘要翻译： 提高发光效率和可靠性。 在第二半导体层108的整个顶表面上形成透明导电膜10，并且在其上施加光刻胶。 当去除与第一半导体层104的电极形成部分16对应的上表面上的光致抗蚀剂时，除去光致抗蚀剂以在要去除的部分的边界处逐渐变薄。 使用剩余的光致抗蚀剂作为掩模对透明导电膜进行湿式蚀刻，以暴露第二半导体层的一部分。 使用剩余的光致抗蚀剂和透明导电膜作为掩模进行干法蚀刻，以暴露形成第一半导体层的一部分的电极。 在使用剩余光刻胶作为掩模的干蚀刻中曝光的透明导电膜的一部分被湿式蚀刻。 剩下的光刻胶被消除。

    METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE
    7.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    制造半导体发光器件的方法

    公开(公告)号：US20130011953A1

    公开(公告)日：2013-01-10

    申请号：US13636392

    申请日：2011-03-14

    申请人： Naoki Nakajo ,  Masao Kamiya ,  Akihiro Honma

    发明人： Naoki Nakajo ,  Masao Kamiya ,  Akihiro Honma

    IPC分类号： H01L33/32

    CPC分类号： H01L33/42 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

    摘要： To improve light emission efficiency and reliability.A transparent conductive film 10 is formed on an entire top surface of a second semiconductor layer 108, and a photo-resist is applied thereon. When removing the photo-resist on the upper surface corresponding to an electrode forming part 16 of a first semiconductor layer 104, the photo-resist is removed to be gradually thinned at a boundary of a portion to be removed. The transparent conductive film is wet etched using the remaining photo-resist as a mask to expose a part of the second semiconductor layer. Dry etching is performed using the remaining photo-resist and the transparent conductive film as a mask to expose the electrode forming part of the first semiconductor layer. A portion of the transparent conductive film exposed in the dry etching using the remaining photo-resist as a mask is wet etched. The remaining photo-resist is eliminated.

    摘要翻译： 提高发光效率和可靠性。 在第二半导体层108的整个顶表面上形成透明导电膜10，并且在其上施加光刻胶。 当去除与第一半导体层104的电极形成部分16对应的上表面上的光致抗蚀剂时，除去光致抗蚀剂以在要除去的部分的边界逐渐变薄。 使用剩余的光致抗蚀剂作为掩模对透明导电膜进行湿式蚀刻，以暴露第二半导体层的一部分。 使用剩余的光致抗蚀剂和透明导电膜作为掩模进行干法蚀刻，以暴露形成第一半导体层的一部分的电极。 在使用剩余光刻胶作为掩模的干蚀刻中曝光的透明导电膜的一部分被湿式蚀刻。 剩下的光刻胶被消除。