公开(公告)号：US06753587B2

公开(公告)日：2004-06-22

申请号：US10026451

申请日：2001-12-27

申请人： Akira Furuya ,  Tatsunori Shirai

发明人： Akira Furuya ,  Tatsunori Shirai

IPC分类号： H01L31105

CPC分类号： H01L31/0352 ,  H01L31/105

摘要： A high response speed semiconductor photo detecting device having a thin photo absorption layer which avoids an optical efficiency loss. The semiconductor photo detecting devices are formed on a semiconductor substrate having an inclined cleavage face to a principal plane of the substrate. An incoming photo signal is input to the cleavage face perpendicularly.

摘要翻译： 具有避免光学效率损失的薄光吸收层的高响应速度半导体光电检测装置。 半导体光检测装置形成在具有到基板的主平面的倾斜的切割面的半导体基板上。 输入的光信号被垂直地输入到切割面。

公开(公告)号：US5179431A

公开(公告)日：1993-01-12

申请号：US813051

申请日：1991-12-23

申请人： Tatsunori Shirai

发明人： Tatsunori Shirai

IPC分类号： H01L31/107

CPC分类号： H01L31/1075

摘要： An avalanche photodiode comprises a substrate, a first semiconductor layer provided on the substrate and made of a first group III-V compound semiconductor material doped to a first conductivity type for producing carriers in response to optical radiation incident to the avalanche photodiode, a second semiconductor layer provided on the first semiconductor layer and comprising a second group III-V compound semiconductor material doped to the first conductivity for causing an avalanche multiplication of the carriers, a photoreception region formed within the second semiconductor layer and doped to a second conductivity type for forming a p-n junction at an interface to the second semiconductor layer, and a guard ring formed along a lateral boundary of the photoreception region. The second semiconductor layer comprises a first layer, a second layer and a third layer with respective impurity concentration levels such that the impurity concentration level of the first layer is substantially smaller than the impurity concentration level of the second layer and the impurity concentration level of the third layer is substantially smaller than the impurity concentration level of the second layer. The guard ring region is formed such that the guard ring region extends at least into the second layer.

摘要翻译： 雪崩光电二极管包括衬底，第一半导体层，设置在衬底上，并由掺杂到第一导电类型的第一III-V族化合物半导体材料制成，用于响应入射到雪崩光电二极管的光辐射产生载流子;第二半导体 层，其设置在所述第一半导体层上，并且包括掺杂到所述第一导电性的第二III-V族化合物半导体材料，用于引起所述载流子的雪崩倍增;形成在所述第二半导体层内并掺杂到第二导电类型以形成的光接收区域 在与第二半导体层的界面处的pn结，以及沿着光接收区域的横向边界形成的保护环。 第二半导体层包括具有各自的杂质浓度水平的第一层，第二层和第三层，使得第一层的杂质浓度水平基本上小于第二层的杂质浓度水平和杂质浓度水平 第三层基本上小于第二层的杂质浓度水平。 保护环区域形成为使得保护环区域至少延伸到第二层中。

公开(公告)号：US4415370A

公开(公告)日：1983-11-15

申请号：US187419

申请日：1980-09-15

申请人： Shuzo Kagawa ,  Tatsunori Shirai ,  Takao Kaneda ,  Yasuo Baba

发明人： Shuzo Kagawa ,  Tatsunori Shirai ,  Takao Kaneda ,  Yasuo Baba

IPC分类号： H01L21/265 ,  H01L29/167 ,  H01L31/0288 ,  H01L31/103 ,  H01L21/263

CPC分类号： H01L21/26506 ,  H01L29/167 ,  H01L31/0288 ,  H01L31/103 ,  Y02E10/50

摘要： A semiconductor device, and a method for manufacturing it in which ions of beryllium are implanted into a germanium substrate to form a layer containing p-type impurity material. There after the substrate is heated at a temperature in the range of 400.degree. C. to 700.degree. C. to diffuse the beryllium ions into the substrate so that the concentration of beryllium at the surface of the impurity layer is in the order of 10.sup.17 cm.sup.-3 or more. In one embodiment, a p-type channel stopper is formed locally in a p-type germanium substrate and an n-type active layer is formed in a region surrounded by, and isolated from, the channel stopper region. In another embodiment, a relatively shallow p-type active layer is formed at one part of an n-type germanium substrate and p-type guard ring regions are formed surrounding, and partly overlapping said p-type active layer. In a further embodiment, a p-type island region is formed at one part of an n-type germanium substrate, and an n-type region is formed within said p-type region. In these embodiments, the p-type channel stopper region, p-type guard ring regions and the p-type island region are all formed by implanting ions of beryllium into the germanium substrate.

摘要翻译： 一种半导体器件及其制造方法，其中将铍的离子注入到锗衬底中以形成含有p型杂质的层。 在400℃〜700℃的温度下加热基板后，将铍离子扩散到基板中，使杂质层表面的铍浓度为1017cm -1以下， 3以上。 在一个实施例中，在p型锗衬底中局部形成p型通道阻挡层，并且在由沟道阻挡区域包围和隔离的区域中形成n型有源层。 在另一个实施例中，在n型锗衬底的一部分处形成较浅的p型有源层，并且形成p型保护环区域，并且与所述p型有源层部分重叠。 在另一实施例中，在n型锗衬底的一部分处形成p型岛区，在所述p型区内形成n型区。 在这些实施例中，p型沟道截止区，p型保护环区和p型岛区均通过将铍离子注入到锗衬底中而形成。

公开(公告)号：US4481523A

公开(公告)日：1984-11-06

申请号：US326119

申请日：1981-11-30

申请人： Fukunobu Osaka ,  Tatsunori Shirai

发明人： Fukunobu Osaka ,  Tatsunori Shirai

IPC分类号： H01L31/107 ,  H01L27/14

CPC分类号： H01L31/1075

摘要： An avalanche photodiode sensitive to a wavelength range of from 1.2 to 1.65 micrometers is provided with a light absorbing layer, a middle layer and an active layer grown in order, on a substrate. All the layers contain impurities with the same conductivity but the impurity concentration is higher in the middle layer than in either of the light absorbing layer and the active layer. A p-n junction having a flat bottom and either a gradually inclined side or a step-shaped side is produced in the active layer, so that the breakdown voltage is made much less in the area facing the flat bottom of the p-n junction than in the area facing a side which has the aforementioned irregular shape. As a result, the side acts as a guard ring without being accompanied by a large amount of tunnel current flowing through the light absorbing layer in response to the intensity of the electric field. An alternative avalanche photodiode includes a light absorbing layer, an active layer and a surface layer grown in this order and having a well shaped p-n junction which penetrates the interface between the surface layer and the active layer to spread along the same interface in the active layer. Since the impurity concentration of the surface layer is extremely marginal, performance characteristics similar to those mentioned above are realized.

摘要翻译： 在1.2至1.65微米的波长范围内敏感的雪崩光电二极管在基板上设置有依次生长的光吸收层，中间层和有源层。 所有层都含有具有相同导电性的杂质，但在中间层中的杂质浓度比在光吸收层和活性层中的任何一个都高。 在有源层中产生具有平底部和逐渐倾斜侧或阶梯形侧的pn结，使得在pn结的平坦底部面积比在该区域中的击穿电压要小得多 面对具有上述不规则形状的一侧。 结果，该侧作为保护环而不伴随响应于电场强度而流过光吸收层的大量隧道电流。 替代的雪崩光电二极管包括光吸收层，有源层和表面层，其依次生长并且具有良好形状的pn结，其穿透表面层和有源层之间的界面，以沿着活性层中的相同界面扩散 。 由于表面层的杂质浓度非常小，实现了与上述相似的性能特性。