公开(公告)号：US06180974B2

公开(公告)日：2001-01-30

申请号：US08986333

申请日：1997-12-05

申请人： Akira Okutoh ,  Masaya Nagata ,  Shun Mitarai ,  Yasuyuki Itoh

发明人： Akira Okutoh ,  Masaya Nagata ,  Shun Mitarai ,  Yasuyuki Itoh

IPC分类号： H01L27108

CPC分类号： H01L28/60 ,  H01L28/55

摘要： In a semiconductor storage device in a stack structure wherein a capacitor section having an upper electrode, a dielectric layer, and a lower electrode is connected with a transistor section by a plug, the lower electrode is formed in contact with the plug. The lower electrode is formed of at least an oxide of a platinum-rhodium alloy. In addition to the oxide of a platinum-rhodium alloy, platinum and/or a platinum-rhodium alloy can be used as materials for forming the lower electrode. The plug is formed of polysilicon or tungsten. When the plug is formed of polysilicon, the lower electrode is formed by sequentially laminating, for example, a film of the oxide of the platinum-rhodium alloy, a film of the platinum-rhodium alloy, and a film of the oxide of the platinum-rhodium alloy on the plug.

摘要翻译： 在具有上电极，电介质层和下电极的电容器部分通过插头与晶体管部分连接的堆叠结构的半导体存储器件中，下电极形成为与插头接触。 下电极由至少一种铂 - 铑合金的氧化物形成。 除了铂 - 铑合金的氧化物之外，可以使用铂和/或铂 - 铑合金作为形成下电极的材料。 插头由多晶硅或钨制成。 当插塞由多晶硅形成时，下电极通过依次层压例如铂 - 铑合金的氧化物的膜，铂 - 铑合金的膜和铂的氧化物的膜 - 铑合金在插头上。

公开(公告)号：US06201271B1

公开(公告)日：2001-03-13

申请号：US09115244

申请日：1998-07-14

申请人： Akira Okutoh ,  Yasuyuki Itoh

发明人： Akira Okutoh ,  Yasuyuki Itoh

IPC分类号： H01L2994

CPC分类号： H01L27/11502 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/55

摘要： An alloy oxide film of platinum and rhodium is formed as an upper electrode so as to be put in direct contact with a ferroelectric PZT film. Asymmetry of a hysteresis loop characteristic of a dielectric material representing a correlation between a polarization value and an application electric field as well as a deterioration such as an increase in leak current density, when oxide electrode of IrO2, RuO2, RhO2 or the like is used, are improved.

摘要翻译： 形成铂和铑的合金氧化物膜作为上电极，以便与铁电PZT膜直接接触。 使用表示极化值和施加电场之间的相关性的介电材料的磁滞回线特性的不对称性以及诸如漏电流密度增加的劣化，当使用IrO 2，RuO 2，RhO 2等的氧化物电极时 ，得到改进。

公开(公告)号：US06576942B2

公开(公告)日：2003-06-10

申请号：US10179245

申请日：2002-06-26

申请人： Akira Okutoh ,  Kazuya Ishihara

发明人： Akira Okutoh ,  Kazuya Ishihara

IPC分类号： H01L2976

CPC分类号： H01L21/02178 ,  H01L21/02337 ,  H01L21/31604 ,  H01L21/31616 ,  H01L28/55

摘要： By depositing a diffusion prevention film 7 constructed of an oxide of aluminum containing barium and heat-treating the diffusion prevention film 7 in the atmosphere of a mixed gas of oxygen and carbon dioxide, carbon dioxide is made to adsorb to the barium contained in the diffusion prevention film 7. The diffusion prevention film can effectively restrain the permeation of hydrogen and has an excellent hydrogen barrier property. By using the diffusion prevention film for a capacitor, a high-yield semiconductor storage device having the capacitor of a stable ferroelectric characteristic or high dielectric characteristic can be obtained.

摘要翻译： 通过在氧气和二氧化碳的混合气体的气氛中沉积由含有铝的氧化物构成的扩散防止膜7和对扩散防止膜7进行热处理，使二氧化碳吸附到扩散物中所含的钡 防扩散膜能够有效地抑制氢的渗透，具有优异的氢阻隔性。 通过使用用于电容器的防扩散膜，可以获得具有稳定的铁电特性或高介电特性的电容器的高成品半导体存储装置。

公开(公告)号：US6162293A

公开(公告)日：2000-12-19

申请号：US993717

申请日：1997-12-18

申请人： Takeshi Kijima ,  Akira Okutoh ,  Maho Ushikubo ,  Hironori Matsunaga

发明人： Takeshi Kijima ,  Akira Okutoh ,  Maho Ushikubo ,  Hironori Matsunaga

IPC分类号： C30B29/22 ,  C23C16/40 ,  C30B29/32 ,  H01B3/12 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  C30B25/14

CPC分类号： H01L28/56 ,  C23C16/40

摘要： A method for manufacturing a ferroelectric thin film having a layered perovskite crystal structure of the general formula: Bi.sub.2 A.sub.m-1 B.sub.m O.sub.3m+3, wherein A is selected from the group consisting of Na.sup.1+, K.sup.1+, Pb.sup.2+, Ca.sup.2+, Sr.sup.2+, Ba.sup.2+ and Bi.sup.3+, B is selected from the group consisting of Fe.sup.3+, Ti.sup.4+, Nb.sup.5+, Ta.sup.5+, W.sup.6+ and Mo.sup.6+, and m represents an integer of 1 or larger, which comprises introducing into a film formation chamber where a substrate is set, gaseous starting materials inclusive of oxygen gas for forming the ferroelectric thin film in which the flow rate of oxygen gas as one component of the gaseous starting materials is controlled to an arbitrary value necessary for the formation of the ferroelectric thin film having a desired orientation while the pressure inside the film formation chamber and the total flow rate of the gaseous starting materials and an optionally introduced carrier gas are maintained constant.

摘要翻译： 一种制备具有以下通式的叠层钙钛矿晶体结构的铁电薄膜的方法：Bi2Am-1BmO3m + 3，其中A选自Na1 +，K1 +，Pb2 +，Ca2 +，Sr2 +，Ba2 +和Bi3 +，B为 选自Fe3 +，Ti4 +，Nb5 +，Ta5 +，W6 +和Mo6 +，m表示1以上的整数，其包括向成膜室内导入基板，气体原料包括氧气， 形成铁电薄膜，其中作为气态原料的一个组分的氧气的流量被控制为形成期望取向的铁电薄膜所需的任意值，同时成膜室内的压力和 气态原料和任选引入的载气的总流量保持恒定。