公开(公告)号：US20100032766A1

公开(公告)日：2010-02-11

申请号：US12308158

申请日：2006-06-02

申请人： Alan Sangone Chen ,  Mark Victor Dyson ,  Edward Belden Harris ,  Daniel Charles Kerr ,  William John Nagy

发明人： Alan Sangone Chen ,  Mark Victor Dyson ,  Edward Belden Harris ,  Daniel Charles Kerr ,  William John Nagy

IPC分类号： H01L27/102 ,  H01L21/331 ,  H01L21/8249 ,  H01L29/73

CPC分类号： H01L29/0821 ,  H01L29/404

摘要： A process for forming a bipolar junction transistor (BJT) in a semiconductor substrate and a BJT formed according to the process. A buried isolation region is formed underlying BJT structures to isolate the BJT structures from the p-type semi-conductor substrate. To reduce capacitance between a BJT subcollector and the buried isolation region, prior to implanting the subcollector spaced-apart structures are formed on a surface of the substrate. The subcollector is formed by implanting ions through the spaced-apart structures and through a region intermediate the spaced-apart structures. The formed BJT subcollector therefore comprises a body portion and end portions extending therefrom, with the end portions disposed at a shallower depth than the body portion, since the ions implanting the end portions must pass through the spaced-apart structures. The shallower depth of the end portions reduces the capacitance.

摘要翻译： 在半导体衬底中形成双极结型晶体管（BJT）的工艺和根据该工艺形成的BJT。 在BJT结构之下形成掩埋隔离区，以将BJT结构与p型半导体衬底隔离。 为了减小BJT子集电极和掩埋隔离区之间的电容，在植入之前，在基板的表面上形成间接分离结构的子集电极。 子集电极通过将离子注入间隔开的结构并通过间隔开的结构之间的区域而形成。 因此，形成的BJT子集电极包括主体部分和从其延伸的端部，其端部设置在比主体部分更浅的深度，因为注入端部的离子必须通过间隔开的结构。 端部较浅的深度减小了电容。

公开(公告)号：US20070278539A1

公开(公告)日：2007-12-06

申请号：US11446016

申请日：2006-06-02

申请人： Mark Victor Dyson ,  Nace Rossi ,  Ranbir Singh

发明人： Mark Victor Dyson ,  Nace Rossi ,  Ranbir Singh

IPC分类号： H01L29/76 ,  H01L29/808 ,  H01L21/337

CPC分类号： H01L29/66242 ,  H01L27/0248 ,  H01L29/66901 ,  H01L29/7378 ,  H01L29/808

摘要： A semiconductor device is described that operates as an improved junction field effect transistor (JFET). A bipolar transistor with a collector region, a base region, an emitter region, a first base contact, and a second base contact insulated from the first base contact, has the base region lightly doped to about a 1E16 to 5E17 atoms/cm3 doping level. A connection is provided between the emitter region and the collector region to act as a JFET gate contact for the bipolar transistor. The semiconductor device operates as an improved JFET with the first base contact being a drain contact and the second base contact being a source contact. A method for manufacture of an improved JFET on a chip containing conventional bipolar devices is also described. The improved JFET is shown being used with a write head in a disk drive system for providing electrostatic discharge protection.

摘要翻译： 描述了作为改进的结型场效应晶体管（JFET）工作的半导体器件。 具有集电极区域，基极区域，发射极区域，第一基极触点和与第一基极接触绝缘的第二基极触点的双极晶体管具有轻度掺杂到约1E16至5E17原子/ cm 2的基极区域 > 3 掺杂水平。 在发射极区域和集电极区域之间提供连接以用作双极晶体管的JFET栅极接触。 半导体器件作为改进的JFET工作，第一基极触点是漏极触点，第二基极触点是源极触点。 还描述了用于制造包含常规双极器件的芯片上的改进的JFET的方法。 改进的JFET被示出用于提供静电放电保护的盘驱动系统中的写头。