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公开(公告)号：US08044674B2
公开(公告)日：2011-10-25
申请号：US12613761
申请日：2009-11-06
IPC分类号： G01R31/3187
CPC分类号： H03K17/0822 , G01K3/10 , H01L23/34 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device with a thermal fault detection is disclosed. According to one example of the invention such a semiconductor device includes a semiconductor chip including an active area. It further includes a temperature sensor arrangement that provides a measurement signal dependent on the temperature in or close to the active area, the measurement signal having a slope of a time-dependent steepness, and an evaluation circuit that is configured to provide an output signal that is representative of the steepness of the slope of the measurement signal and further configured to signal a steepness higher than a predefined threshold.
摘要翻译： 公开了一种具有热故障检测的半导体器件。 根据本发明的一个示例，这种半导体器件包括包括有源区的半导体芯片。 它还包括温度传感器装置，该温度传感器装置提供取决于有效区域内或附近的温度的测量信号，测量信号具有时间依赖性陡度的斜率，以及评估电路，其被配置为提供输出信号， 表示测量信号的斜率的陡度，并进一步被配置为发送高于预定阈值的陡度。
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公开(公告)号：US08045310B2
公开(公告)日：2011-10-25
申请号：US12649974
申请日：2009-12-30
IPC分类号： H02H9/02
CPC分类号： H03K17/0822
摘要： A semiconductor device with an over-current detection feature is disclosed. According to an example of the invention the device includes: a semiconductor chip including a load current path that conducts a load current in response to an input signal activating the load current flow. A current sensor arrangement provides a measurement signal representing the load current. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-current when the measurement signal exceeds the first threshold after a delay time period starting from the activation of the load current flow has elapsed.
摘要翻译： 公开了具有过电流检测特征的半导体器件。 根据本发明的示例，该装置包括：半导体芯片，其包括响应于激活负载电流流动的输入信号而传导负载电流的负载电流路径。 电流传感器装置提供表示负载电流的测量信号。 评估电路被配置为在从负载电流流动的激活开始的延迟时间段过去之后，将测量信号与第一阈值进行比较，并且在测量信号超过第一阈值时发出过电流信号。
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公开(公告)号：US08296093B2
公开(公告)日：2012-10-23
申请号：US12649994
申请日：2009-12-30
IPC分类号： G01K1/08
CPC分类号： G01K3/005 , G01K13/00 , H01L2924/0002 , H03K2017/0806 , H01L2924/00
摘要： A semiconductor device includes a semiconductor chip including an active area. A temperature sensor arrangement provides a measurement signal dependent on the temperature in or close to the active area. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-temperature when the measurement signal exceeds the first threshold. The evaluation circuit is also configured to count the number of exceedances of the first threshold and to signal when a maximum number of exceedances is reached.
摘要翻译： 半导体器件包括具有有源区的半导体芯片。 温度传感器装置提供取决于活动区域中或附近的温度的测量信号。 评估电路被配置为将测量信号与第一阈值进行比较，并且当测量信号超过第一阈值时发出过温信号。 评估电路还被配置为对超过第一阈值的数量进行计数，并且当达到最大超出数时发出信号。
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公开(公告)号：US20110109372A1
公开(公告)日：2011-05-12
申请号：US12613761
申请日：2009-11-06
IPC分类号： G01K7/00
CPC分类号： H03K17/0822 , G01K3/10 , H01L23/34 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device with a thermal fault detection is disclosed. According to one example of the invention such a semiconductor device includes a semiconductor chip including an active area. It further includes a temperature sensor arrangement that provides a measurement signal dependent on the temperature in or close to the active area, the measurement signal having a slope of a time-dependent steepness, and an evaluation circuit that is configured to provide an output signal that is representative of the steepness of the slope of the measurement signal and further configured to signal a steepness higher than a predefined threshold.
摘要翻译： 公开了一种具有热故障检测的半导体器件。 根据本发明的一个示例，这种半导体器件包括包括有源区的半导体芯片。 它还包括温度传感器装置，该温度传感器装置提供取决于有效区域内或附近的温度的测量信号，测量信号具有时间依赖性陡度的斜率，以及评估电路，其被配置为提供输出信号， 表示测量信号的斜率的陡度，并进一步被配置为发送高于预定阈值的陡度。
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公开(公告)号：US20110156799A1
公开(公告)日：2011-06-30
申请号：US12649994
申请日：2009-12-30
CPC分类号： G01K3/005 , G01K13/00 , H01L2924/0002 , H03K2017/0806 , H01L2924/00
摘要： A semiconductor device includes a semiconductor chip including an active area. A temperature sensor arrangement provides a measurement signal dependent on the temperature in or close to the active area. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-temperature when the measurement signal exceeds the first threshold. The evaluation circuit is also configured to count the number of exceedances of the first threshold and to signal when a maximum number of exceedances is reached.
摘要翻译： 半导体器件包括具有有源区的半导体芯片。 温度传感器装置提供取决于活动区域中或附近的温度的测量信号。 评估电路被配置为将测量信号与第一阈值进行比较，并且当测量信号超过第一阈值时发出过温信号。 评估电路还被配置为对超过第一阈值的数量进行计数，并且当达到最大超出数时发出信号。
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