摘要:
A memory device utilizing a phase change material as the storage medium, the phase change material based on antimony as the solvent in a solid solution.
摘要:
A process for preparing a phase change memory semiconductor device comprising a (plurality of) nanoscale electrode(s) for alternately switching a chalcogenide phase change material from its high resistance (amorphous) state to its low resistance (crystalline) state, whereby a reduced amount of current is employed, and wherein the plurality of nanoscale electrodes, when present, have substantially the same dimensions.