公开(公告)号：US4859303A

公开(公告)日：1989-08-22

申请号：US106213

申请日：1987-10-09

申请人： Alexander Kalnitsky ,  Joseph P. Ellul ,  Sing P. Tay ,  Jacques G. Poirier

发明人： Alexander Kalnitsky ,  Joseph P. Ellul ,  Sing P. Tay ,  Jacques G. Poirier

IPC分类号： B44D3/16 ,  G03F7/42 ,  H01J37/32

CPC分类号： H01J37/32357 ,  B44D3/168 ,  G03F7/427 ,  H01J2237/004

摘要： In a method and apparatus for plasma stripping a polymer photoresist coating from a semiconductor substrate, positively charged species are removed from an activated gas flow before the gas flow is brought into contact with the coating to strip the coating from the substrate. The positively charged species may be removed by bringing the activated gas into contact with a grounded conducting surface to discharge the positively charged species, or by passing the activated gas through a negatively charged electrostatic filter to filter out positively charged species. The removal of positively charged species from the gas flow reduces or eliminates build up of positive charge on an outer surface of the photoresist coating so as to avoid driving mobile positively charged ions from the photoresist into the substrate, thereby avoiding contamination of the substrate.

摘要翻译： 在用于从半导体衬底等离子体剥离聚合物光刻胶涂层的方法和装置中，在使气流与涂层接触以从衬底剥离涂层之前，从活性气体流中除去带正电的物质。 可以通过使活化气体与接地的导电表面接触以排出带正电的物质或通过使活化气体通过带负电的静电过滤器以过滤带正电的物质来除去带正电的物质。 从气流中去除带正电荷的物质减少或消除在光致抗蚀剂涂层的外表面上的正电荷的积累，以避免驱动移动的带正电荷的离子从光致抗蚀剂进入衬底，从而避免衬底的污染。