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公开(公告)号:US20080248602A1
公开(公告)日:2008-10-09
申请号:US12049702
申请日:2008-03-17
申请人: Alexei A. Erchak , Michael Lim , Scott W. Duncan , John W. Graff , Milan S. Minsky , Matthew Weig
发明人: Alexei A. Erchak , Michael Lim , Scott W. Duncan , John W. Graff , Milan S. Minsky , Matthew Weig
IPC分类号: H01L21/00
CPC分类号: H01L21/2007 , H01L33/0079 , H01L2224/48091 , H01L2924/00014
摘要: Light-emitting devices, and related components, processes, systems and methods are disclosed.
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公开(公告)号:US07799585B2
公开(公告)日:2010-09-21
申请号:US12272120
申请日:2008-11-17
IPC分类号: H01L21/58
CPC分类号: H01L33/20 , H01L33/0079 , H01L2933/0083
摘要: Light-emitting device methods are disclosed.
摘要翻译: 公开了发光器件的方法。
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公开(公告)号:US20090137072A1
公开(公告)日:2009-05-28
申请号:US12272120
申请日:2008-11-17
IPC分类号: H01L21/62
CPC分类号: H01L33/20 , H01L33/0079 , H01L2933/0083
摘要: Light-emitting device methods are disclosed.
摘要翻译: 公开了发光器件的方法。
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公开(公告)号:US07521273B2
公开(公告)日:2009-04-21
申请号:US11317584
申请日:2005-12-23
IPC分类号: H01L21/00
CPC分类号: H01L33/20 , H01L33/0079 , H01L2933/0083
摘要: Light-emitting device methods are disclosed.
摘要翻译: 公开了发光器件的方法。
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公开(公告)号:US07074631B2
公开(公告)日:2006-07-11
申请号:US10794452
申请日:2004-03-05
IPC分类号: H01L21/00
CPC分类号: H01L33/20 , H01L33/0079 , H01L2933/0083 , Y10S438/95 , Y10S438/956
摘要: A method includes disposing a planarization layer on a surface of a layer of semiconductor material and disposing a lithography layer on a surface of the planarization layer. The method also includes performing nanolithography to remove at least a portion of the planarization layer, at least a portion of the lithography layer and at least a portion of the layer of semiconductor material, thereby forming a dielectric function in the surface of the layer of semiconductor material that varies spatially according to a pattern.
摘要翻译: 一种方法包括在半导体材料层的表面上设置平坦化层并在平坦化层的表面上设置光刻层。 该方法还包括进行纳米光刻以去除平坦化层的至少一部分,光刻层的至少一部分和半导体材料层的至少一部分,从而在半导体层的表面形成介电功能 根据图案在空间上变化的材料。
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