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1.
公开(公告)号:US20050045160A1
公开(公告)日:2005-03-03
申请号:US10655240
申请日:2003-09-03
CPC分类号: F02M25/089
摘要: An evaporative emissions canister for use in an automotive evaporative emission system to control emission of fuel vapors to the atmosphere, the system including a fuel tank coupled to an automotive engine, the canister comprising: a housing having side walls, a top wall and a bottom wall; a hydrocarbon-adsorbing material disposed so as to provide a vapor adsorbent chamber for adsorbing hydrocarbon fuel vapor flowing therethrough; and separating means located adjacent the vapor adsorbent chamber for separating fuel vapor and liquid fuel.
摘要翻译: 一种用于汽车蒸发排放系统的蒸发排放罐,用于控制向大气排放的燃料蒸汽,所述系统包括联接到汽车发动机的燃料箱,所述罐包括:壳体,其具有侧壁,顶壁和底部 壁; 一种烃吸附材料,其设置成提供用于吸附流过其中的烃类燃料蒸气的蒸汽吸附剂室; 以及位于蒸气吸附剂室附近以分离燃料蒸气和液体燃料的分离装置。
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公开(公告)号:US20060003597A1
公开(公告)日:2006-01-05
申请号:US10881052
申请日:2004-06-30
申请人: Oleg Golonzka , Ajay Sharma , Nadia Rahhal-Orabi , Anthony Amour , James Chung
发明人: Oleg Golonzka , Ajay Sharma , Nadia Rahhal-Orabi , Anthony Amour , James Chung
IPC分类号: H01L21/336 , H01L21/31
CPC分类号: H01L21/0217 , H01L21/0214 , H01L21/3143 , H01L21/3148 , H01L21/3185 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L29/66636 , H01L29/7843
摘要: The performance of NMOS and PMOS regions of integrated circuits is improved. Embodiments of the invention include forming a first dielectric layer optimized for n-doped regions over the n-doped regions and forming a second dielectric layer optimized for p-doped regions over p-doped regions.
摘要翻译: 提高了集成电路的NMOS和PMOS区域的性能。 本发明的实施例包括形成针对n掺杂区域上的n掺杂区域优化的第一电介质层,并形成对p掺杂区域上的p掺杂区域优化的第二介电层。
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