公开(公告)号：US20250140681A1

公开(公告)日：2025-05-01

申请号：US18499345

申请日：2023-11-01

Applicant: Allegro MicroSystems, LLC

Inventor： Felix Palumbo ,  Thomas S. Chung ,  Maxim Klebanov

IPC: H01L23/522

Abstract: Example embodiments include methods and apparatus for a structure having a capacitor, where the structure includes a plurality of inter-metal dielectric (IMD) layers above a substrate, a plurality of metal layers between respective IMD layers. In embodiments, BEOL metal regions and interconnects form plates of the capacitor. In example embodiments, lateral capacitors can be formed away from the substrate.

公开(公告)号：US20240063310A1

公开(公告)日：2024-02-22

申请号：US17819957

申请日：2022-08-16

Applicant: Allegro MicroSystems, LLC

Inventor： Yu-Chun Li ,  Felix Palumbo ,  Chung C. Kuo ,  Thomas S. Chung ,  Maxim Klebanov

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/40

CPC classification number: H01L29/872 ,  H01L29/0623 ,  H01L29/402

Abstract: A Schottky diode includes a substrate having a first type dopant, a buried layer within the substrate and having a second type dopant, an epitaxial layer above the buried layer and having the second type dopant, a plurality of rings within the epitaxial layer and having the first type dopant, wherein the plurality of rings comprises an L-shaped ring, a shallow trench isolation (STI) layer at the top region of the epitaxial layer, an anode, a cathode spaced from the anode by the STI layer, and wherein the buried layer has an open region substantially vertically aligned with the anode.

公开(公告)号：US12119413B2

公开(公告)日：2024-10-15

申请号：US17819957

申请日：2022-08-16

Applicant: Allegro MicroSystems, LLC

Inventor： Yu-Chun Li ,  Felix Palumbo ,  Chung C. Kuo ,  Thomas S. Chung ,  Maxim Klebanov

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/40

CPC classification number: H01L29/872 ,  H01L29/0623 ,  H01L29/402

Abstract: A Schottky diode includes a substrate having a first type dopant, a buried layer within the substrate and having a second type dopant, an epitaxial layer above the buried layer and having the second type dopant, a plurality of rings within the epitaxial layer and having the first type dopant, wherein the plurality of rings comprises an L-shaped ring, a shallow trench isolation (STI) layer at the top region of the epitaxial layer, an anode, a cathode spaced from the anode by the STI layer, and wherein the buried layer has an open region substantially vertically aligned with the anode.