公开(公告)号：US20240405124A1

公开(公告)日：2024-12-05

申请号：US18327200

申请日：2023-06-01

Applicant: Allegro MicroSystems, LLC

Inventor： Yu-Chun Li ,  Thomas S. Chung ,  Maxim Klebanov ,  Chung C. Kuo ,  James M. McClay ,  Robert A. Wilson

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66

Abstract: According to one aspect of the present disclosure, a semiconductor device includes a substrate having a first type dopant. In some embodiments, the semiconductor device also includes an epitaxial layer above the substrate, having a second type dopant and a top region. In some embodiments, the semiconductor device also includes a trench in the top region of the epitaxial layer; at least one doped ring implanted in the epitaxial layer below the trench; and a dielectric material filling within the trench. In some embodiments, there is a twelve-sided body tie in the epitaxial layer, wherein the sides of the twelve-sided body tie are not all equal to each other.

公开(公告)号：US20240063310A1

公开(公告)日：2024-02-22

申请号：US17819957

申请日：2022-08-16

Applicant: Allegro MicroSystems, LLC

Inventor： Yu-Chun Li ,  Felix Palumbo ,  Chung C. Kuo ,  Thomas S. Chung ,  Maxim Klebanov

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/40

CPC classification number: H01L29/872 ,  H01L29/0623 ,  H01L29/402

Abstract: A Schottky diode includes a substrate having a first type dopant, a buried layer within the substrate and having a second type dopant, an epitaxial layer above the buried layer and having the second type dopant, a plurality of rings within the epitaxial layer and having the first type dopant, wherein the plurality of rings comprises an L-shaped ring, a shallow trench isolation (STI) layer at the top region of the epitaxial layer, an anode, a cathode spaced from the anode by the STI layer, and wherein the buried layer has an open region substantially vertically aligned with the anode.

公开(公告)号：US12119413B2

公开(公告)日：2024-10-15

申请号：US17819957

申请日：2022-08-16

Applicant: Allegro MicroSystems, LLC

Inventor： Yu-Chun Li ,  Felix Palumbo ,  Chung C. Kuo ,  Thomas S. Chung ,  Maxim Klebanov

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/40

CPC classification number: H01L29/872 ,  H01L29/0623 ,  H01L29/402

Abstract: A Schottky diode includes a substrate having a first type dopant, a buried layer within the substrate and having a second type dopant, an epitaxial layer above the buried layer and having the second type dopant, a plurality of rings within the epitaxial layer and having the first type dopant, wherein the plurality of rings comprises an L-shaped ring, a shallow trench isolation (STI) layer at the top region of the epitaxial layer, an anode, a cathode spaced from the anode by the STI layer, and wherein the buried layer has an open region substantially vertically aligned with the anode.