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公开(公告)号：US20160348271A1
公开(公告)日：2016-12-01
申请号：US15168971
申请日：2016-05-31
CPC分类号： C30B13/20 , C30B11/00 , C30B13/24 , C30B29/06 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention is directed towards an integrated and economic process for making mono-crystalline silicon for photovoltaic applications. It utilizes high purity, low dopant metallurgically produced silicon, in particular, silicon recovered from silicon manufacturing processes, such as kerf silicon processed through a metallurgical furnace process. Liquid silicon from the metallurgical process is cast into specific forms and utilized for float zone purification and crystallization to make mono-crystalline silicon ingots and wafers for photovoltaic cell fabrication.
摘要翻译： 本发明涉及用于制造用于光伏应用的单晶硅的综合和经济的方法。 它利用高纯度，低掺杂剂冶金制造的硅，特别是从硅制造工艺回收的硅，例如通过冶金炉工艺加工的切屑硅。 来自冶金工艺的液态硅被浇铸成特定形式，用于浮区净化和结晶以制造用于光伏电池制造的单晶硅锭和晶片。
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公开(公告)号：US20100032630A1
公开(公告)日：2010-02-11
申请号：US12535618
申请日：2009-08-04
CPC分类号： B28D5/007 , C01B33/021 , C01B33/037 , C01B33/04 , C01B33/107 , C01B33/10705 , C01B33/10736 , Y02P70/179
摘要： A process for the recovery of silicon includes providing silicon-containing solids recovered from a silicon manufacturing process, said recovered silicon-containing solids being substantially free of semiconductor dopants; converting the recovered silicon-containing solids into gaseous silicon forms; subjecting to purification by minimal distillation; collecting the gaseous silicon forms as a condensed liquid of silicon-containing compounds; and utilizing the silicon-containing compounds for silicon deposition.
摘要翻译： 回收硅的方法包括提供从硅制造工艺回收的含硅固体，所述回收的含硅固体基本上不含半导体掺杂剂; 将回收的含硅固体转化为气态硅形式; 通过最少的蒸馏进行纯化; 收集气态硅形式作为含硅化合物的冷凝液体; 并利用含硅化合物进行硅沉积。
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3.发明申请METHOD TO CONVERT SILICON POWDER TO HIGH PURITY POLYSILICON THROUGH INTERMEDIATE SiF4 审中-公开通过中间SiF4将硅粉转化为高纯度聚硅氧烷的方法公开(公告)号：US20100061911A1
公开(公告)日：2010-03-11
申请号：US12535613
申请日：2009-08-04
CPC分类号： B28D5/007 , C01B33/021 , C01B33/037 , C01B33/04 , C01B33/107 , C01B33/10705 , C01B33/10736 , Y02P70/179
摘要： A process for the recovery of silicon includes providing silicon-containing solids recovered from a silicon manufacturing process, said recovered silicon-containing solids being substantially free of semiconductor dopants; converting the recovered silicon-containing solids into gaseous silicon forms; subjecting to purification by minimal distillation; collecting the gaseous silicon forms as a condensed liquid of silicon-containing compounds; and utilizing the silicon-containing compounds for silicon deposition.
摘要翻译： 回收硅的方法包括提供从硅制造工艺回收的含硅固体，所述回收的含硅固体基本上不含半导体掺杂剂; 将回收的含硅固体转化为气态硅形式; 通过最少的蒸馏进行纯化; 收集气态硅形式作为含硅化合物的冷凝液体; 并利用含硅化合物进行硅沉积。
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公开(公告)号：US20100061913A1
公开(公告)日：2010-03-11
申请号：US12535612
申请日：2009-08-04
IPC分类号： C01B33/107 , C01B33/08 , C01B33/021
CPC分类号： B28D5/007 , C01B33/021 , C01B33/037 , C01B33/04 , C01B33/107 , C01B33/10705 , C01B33/10736 , Y02P70/179
摘要： A process for the recovery of silicon includes providing silicon-containing solids recovered from a silicon manufacturing process, said recovered silicon-containing solids being substantially free of semiconductor dopants; converting the recovered silicon-containing solids into gaseous silicon forms; subjecting to purification by minimal distillation; collecting the gaseous silicon forms as a condensed liquid of silicon-containing compounds; and utilizing the silicon-containing compounds for silicon deposition.
摘要翻译： 回收硅的方法包括提供从硅制造工艺回收的含硅固体，所述回收的含硅固体基本上不含半导体掺杂剂; 将回收的含硅固体转化为气态硅形式; 通过最少的蒸馏进行纯化; 收集气态硅形式作为含硅化合物的冷凝液体; 并利用含硅化合物进行硅沉积。
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