公开(公告)号：US20170113938A1

公开(公告)日：2017-04-27

申请号：US15310725

申请日：2015-05-13

Applicant: LG CHEM, LTD.

Inventor： Yoo Seok KIM ,  Jeong Kyu KIM ,  JinHyoung YOO ,  JungWoo LEE ,  Eunsu JANG

IPC: C01B33/107 ,  B01J19/24 ,  B01J10/00

CPC classification number: C01B33/10763 ,  B01J8/008 ,  B01J8/085 ,  B01J10/00 ,  B01J19/0093 ,  B01J19/2415 ,  B01J2208/00176 ,  B01J2208/0053 ,  B01J2208/00787 ,  B01J2219/00792 ,  B01J2219/00822 ,  B01J2219/00855 ,  B01J2219/0086 ,  B01J2219/00867 ,  B01J2219/00869 ,  B01J2219/00873 ,  B01J2219/00889 ,  B01J2219/182 ,  C01B33/1071 ,  C01B33/10736

Abstract: The present invention relates to an apparatus for producing trichlorosilane from tetrachlorosilane in an efficient manner. The apparatus includes an inlet through which reaction raw materials including a metal silicon powder dispersed in liquid tetrachlorosilane enter, a hole through which a gaseous reaction raw material is fed, an outlet through which reaction products including trichlorosilane exit, a tubular reactor in which the reaction raw materials entering through the inlet react with each other during flow, and means for impeding the flow of the fluids to cause collision of the fluids during flow.

公开(公告)号：US08226895B2

公开(公告)日：2012-07-24

申请号：US12289209

申请日：2008-10-22

Applicant: Chikara Inaba

Inventor： Chikara Inaba

IPC: B01J8/24 ,  B01J8/34 ,  B01J8/38 ,  C01B33/107

CPC classification number: C01B33/10736 ,  B01J8/1827 ,  B01J8/34 ,  B01J8/382 ,  B01J19/30 ,  B01J2208/00867 ,  B01J2219/30207 ,  B01J2219/30215 ,  B01J2219/30408 ,  B01J2219/312

Abstract: A reaction apparatus for producing trichlorosilane in which metal silicon powder M is reacted with hydrogen chloride gas, thus generating trichlorosilane, includes: an apparatus body into which the metal silicon powder is supplied; and an ejection port for ejecting the hydrogen chloride gas into the apparatus body from the bottom part of the apparatus body, wherein a plurality of holed pieces having a through hole penetrating in the thickness direction and a plurality of pellets interposed between these holed pieces are stacked in a mixed state on the upper side of the ejection port.

Abstract translation: 一种制造三氯硅烷的反应装置，其中金属硅粉末M与氯化氢气体反应，从而产生三氯硅烷，包括：提供金属硅粉末的装置体; 以及用于从装置主体的底部将氯化氢气体喷射到装置主体中的排出口，其中多个具有沿厚度方向贯穿的通孔的孔和多个在这些孔之间插入的颗粒被堆叠 在喷射口的上侧处于混合状态。

公开(公告)号：US20100264362A1

公开(公告)日：2010-10-21

申请号：US12802320

申请日：2010-06-04

Applicant: YongChae Chee ,  Tetsunori Kunimune

Inventor： YongChae Chee ,  Tetsunori Kunimune

IPC: H01M4/88

CPC classification number: B01J8/0055 ,  B01J8/1836 ,  B01J8/1872 ,  B01J8/32 ,  B01J8/44 ,  B01J2208/00168 ,  B01J2208/00725 ,  C01B33/1071 ,  C01B33/10731 ,  C01B33/10736 ,  C01B33/10742 ,  C01B33/10773

Abstract: A fluidized bed reactor (FBR) for producing chlorosilane mixture, which has high contents of tri-chlorosilane (TCS), by hydro chlorination of metallurgical silicon (MGSI) and a method of producing high contents of TCS stably with the FBR is disclosed. A cooling jacket, which surrounds the lower reactor section, combined with inert initial charging material, which does not react with HCl during the reaction at a temperature of above 300° C. and pressure of above 5 bar, controls the extreme exothermal heat of the reaction. In addition to this, combination of an optimized gas distributor and a feeder that can feed the metallurgical silicon with accuracy of ±5% enabled to realize uniform temperature profile within the reaction zone within ±1 degree ° C. deviation at 350° C. of average reaction temperature and at 5 bar of reaction pressure.

Abstract translation: 公开了一种用于生产三氯硅烷（TCS）含量高的冶金硅（MGSI）加氢氯化的氯硅烷混合物的流化床反应器（FBR）以及用FBR稳定地生产高含量的TCS的方法。 围绕下部反应器部分的冷却套与在高于300℃的温度和高于5巴的压力下在反应期间不与HCl反应的惰性初始充电材料结合，控制了极端放热 反应。 除此之外，优化的气体分配器和能够以±5％的精度供给冶金硅的进料器的组合使得能够在±1℃以内的反应区域内实现均匀的温度分布。在350℃的偏差 平均反应温度和5巴的反应压力。

公开(公告)号：US20020044904A1

公开(公告)日：2002-04-18

申请号：US09973107

申请日：2001-10-09

Inventor： Andreas Bulan ,  Rainer Weber ,  Leslaw Mleczko ,  Hans-Dieter Block

IPC: C01B033/107

CPC classification number: C01B33/10736 ,  C01B33/03 ,  C01B33/10763

Abstract: Process for preparing trichlorosilane by reacting silicon with silicon tetrachloride, hydrogen and optionally hydrogen chloride using catalysts, where silicon is intensively mixed with the catalyst before the reaction.

Abstract translation: 使用催化剂将硅与四氯化硅，氢气和任选的氯化氢反应制备三氯硅烷的方法，其中硅在反应之前与催化剂强烈混合。

公开(公告)号：US09067338B2

公开(公告)日：2015-06-30

申请号：US12535612

申请日：2009-08-04

Applicant: Alleppey V. Hariharan ,  Jagannathan Ravi

Inventor： Alleppey V. Hariharan ,  Jagannathan Ravi

IPC: C01B33/107 ,  C01B33/08 ,  C01B33/021 ,  B28D5/00 ,  C01B33/037 ,  C01B33/04

CPC classification number: B28D5/007 ,  C01B33/021 ,  C01B33/037 ,  C01B33/04 ,  C01B33/107 ,  C01B33/10705 ,  C01B33/10736 ,  Y02P70/179

Abstract: A process for the recovery of silicon includes providing silicon-containing solids recovered from a silicon manufacturing process, said recovered silicon-containing solids being substantially free of semiconductor dopants; converting the recovered silicon-containing solids into gaseous silicon forms; subjecting to purification by minimal distillation; collecting the gaseous silicon forms as a condensed liquid of silicon-containing compounds; and utilizing the silicon-containing compounds for silicon deposition.

Abstract translation: 回收硅的方法包括提供从硅制造工艺回收的含硅固体，所述回收的含硅固体基本上不含半导体掺杂剂; 将回收的含硅固体转化为气态硅形式; 通过最少的蒸馏进行纯化; 收集气态硅形式作为含硅化合物的冷凝液体; 并利用含硅化合物进行硅沉积。

公开(公告)号：US09061439B2

公开(公告)日：2015-06-23

申请号：US12535618

申请日：2009-08-04

Applicant: Alleppey V. Hariharan ,  Jagannathan Ravi

Inventor： Alleppey V. Hariharan ,  Jagannathan Ravi

IPC: C01B33/02 ,  B28D5/00 ,  C01B33/021 ,  C01B33/037 ,  C01B33/04 ,  C01B33/107

CPC classification number: B28D5/007 ,  C01B33/021 ,  C01B33/037 ,  C01B33/04 ,  C01B33/107 ,  C01B33/10705 ,  C01B33/10736 ,  Y02P70/179

Abstract: A process for the recovery of silicon includes providing silicon-containing solids recovered from a silicon manufacturing process, said recovered silicon-containing solids being substantially free of semiconductor dopants; converting the recovered silicon-containing solids into gaseous silicon forms; subjecting to purification by minimal distillation; collecting the gaseous silicon forms as a condensed liquid of silicon-containing compounds; and utilizing the silicon-containing compounds for silicon deposition.

Abstract translation: 回收硅的方法包括提供从硅制造工艺回收的含硅固体，所述回收的含硅固体基本上不含半导体掺杂剂; 将回收的含硅固体转化为气态硅形式; 通过最少的蒸馏进行纯化; 收集气态硅形式作为含硅化合物的冷凝液体; 并利用含硅化合物进行硅沉积。

公开(公告)号：US20120301385A1

公开(公告)日：2012-11-29

申请号：US13576690

申请日：2011-02-09

Applicant: Ayao Akiyoshi ,  Tadashi Aimoto

Inventor： Ayao Akiyoshi ,  Tadashi Aimoto

IPC: C01B33/107

CPC classification number: C01B33/10763 ,  C01B33/1071 ,  C01B33/10736

Abstract: [Problems] To provide a process for efficiently producing trichlorosilane on an industrial scale by efficiently reusing the waste gas of after trichlorosilane is separated by condensation from the gas that is formed by the reaction of metallic silicon with hydrogen chloride.[Means for Solution] A process for producing trichlorosilane, including, independently from each other, a first production process for forming trichlorosilane by reacting metallic silicon with hydrogen chloride and a second production process for forming trichlorosilane by reacting metallic silicon with tetrachlorosilane and hydrogen; whereintrichlorosilane and other chlorosilane compounds are separated by condensation from trichlorosilane-containing gases formed by reaction in the first production process, and the waste gas from which trichlorosilane and other chlorosilane compounds have been separated by condensation is fed as a hydrogen source to the second production process.

Abstract translation: 本发明提供一种通过有效地再利用三氯硅烷后的废气，通过与金属硅与氯化氢的反应形成的气体的冷凝而进行冷凝分离而在工业规模上高效率地制造三氯硅烷的方法。 [解决方案]一种三氯硅烷的制造方法，其特征在于，具有使金属硅与氯化氢反应形成三氯硅烷的第一制造方法和金属硅与四氯硅烷和氢反应形成三氯硅烷的第二制造方法， 其中三氯硅烷和其它氯代硅烷化合物通过在第一制备方法中通过反应形成的三氯硅烷气体的缩合与通过冷凝分离出三氯硅烷和其它氯代硅烷化合物的废气作为氢源被供给到第二次生产 处理。

公开(公告)号：US20110129402A1

公开(公告)日：2011-06-02

申请号：US12931581

申请日：2011-02-04

Applicant: Yong Chae Chee ,  Tetsunori Kunimune

Inventor： Yong Chae Chee ,  Tetsunori Kunimune

IPC: C01B33/107

CPC classification number: B01J8/0055 ,  B01J8/1836 ,  B01J8/1872 ,  B01J8/32 ,  B01J8/44 ,  B01J2208/00168 ,  B01J2208/00725 ,  C01B33/1071 ,  C01B33/10731 ,  C01B33/10736 ,  C01B33/10742 ,  C01B33/10773

Abstract: A fluidized bed reactor (FBR) for producing chlorosilane mixture containing trichlorosilane (TCS) concentration at least 50% from hydrogenation of special metallurgical silicon (MGSI), which has manganese concentration less than 35 ppmw, silicon tetra chloride (STC), and the method of producing high TCS content chlorosilane mixture is disclosed. The FBR according to current application has an expanded over head zone, whose inner diameter is at least twice bigger than that of the inner diameter of the lower straight zone. Temperature of the reaction bed is controlled between 300° C. to 600° C. within the mean temperature deviation of ±5 C. Reaction pressure is maintained between 3 to 10 bar. Retention time of the STC and hydrogen in the reaction bed is controlled to be shorter than 30 seconds. The FBR of the current application enables higher STY (space time yield; production rate/volume of the reactor) of TCS compared to any other current commercial STC cold converter, which hydrogenise STC to TCS.

Abstract translation: 一种用于生产氯硅烷混合物的流化床反应器（FBR），其含有三氯硅烷（TCS）浓度至少为氢化特性冶金硅（MGSI）至少50％，其具有锰浓度小于35ppmw，四氯化硅（STC） 公开了生产高TCS含量的氯硅烷混合物。 根据当前应用的FBR具有扩展的顶部区域，其内径比下直线区域的内径的内径至少大两倍。 在±5℃的平均温度偏差内，将反应床的温度控制在300℃至600℃之间。反应压力保持在3至10巴之间。 控制反应床中STC和氢的保留时间短于30秒。 与目前商业的STC冷转换器相比，TCS的STBR（空时收益率，反应器的生产率/反应堆体积）更高，这使得STC向TCS进行氢化。

公开(公告)号：US20090123359A1

公开(公告)日：2009-05-14

申请号：US12289209

申请日：2008-10-22

Applicant: Chikara Inaba

Inventor： Chikara Inaba

IPC: B01J8/02 ,  C01B33/107

CPC classification number: C01B33/10736 ,  B01J8/1827 ,  B01J8/34 ,  B01J8/382 ,  B01J19/30 ,  B01J2208/00867 ,  B01J2219/30207 ,  B01J2219/30215 ,  B01J2219/30408 ,  B01J2219/312

Abstract: A reaction apparatus for producing trichlorosilane in which metal silicon powder M is reacted with hydrogen chloride gas, thus generating trichlorosilane, includes: an apparatus body into which the metal silicon powder is supplied; and an ejection port for ejecting the hydrogen chloride gas into the apparatus body from the bottom part of the apparatus body, wherein a plurality of holed pieces having a through hole penetrating in the thickness direction and a plurality of pellets interposed between these holed pieces are stacked in a mixed state on the upper side of the ejection port.

Abstract translation: 一种制造三氯硅烷的反应装置，其中金属硅粉末M与氯化氢气体反应，从而产生三氯硅烷，包括：提供金属硅粉末的装置体; 以及用于从装置主体的底部将氯化氢气体喷射到装置主体中的排出口，其中多个具有沿厚度方向贯穿的通孔的孔和多个在这些孔之间插入的颗粒被堆叠 在喷射口的上侧处于混合状态。

公开(公告)号：US08221691B2

公开(公告)日：2012-07-17

申请号：US12312471

申请日：2007-10-25

Applicant: Mitsutoshi Narukawa ,  Yuji Shimizu

Inventor： Mitsutoshi Narukawa ,  Yuji Shimizu

IPC: B01J19/00 ,  B01J8/02

CPC classification number: C01B33/10731 ,  B01J8/025 ,  B01J8/0285 ,  B01J12/007 ,  B01J2208/00415 ,  B01J2208/00513 ,  C01B33/10736

Abstract: An apparatus for producing trichlorosilane includes a reaction container in which a supply gas containing silicon tetrachloride and hydrogen is supplied therein and a reaction product gas containing trichlorosilane and hydrogen chloride is produced; a heat transfer body which is filled in the reaction container, which is formed of a material having a melting point of at least higher than 1,400° C., and which has a void part which enables a gas to be passed; and a heating mechanism heating the heat transfer body in the reaction container.

Abstract translation: 制备三氯硅烷的装置包括反应容器，其中供应含有四氯化硅和氢气的供应气体，并产生含有三氯硅烷和氯化氢的反应产物气体; 填充在反应容器中的传热体，其由熔点至少高于1400℃的材料形成，并且具有能使气体通过的空隙部分; 以及对反应容器内的传热体进行加热的加热机构。