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公开(公告)号:US11367802B2
公开(公告)日:2022-06-21
申请号:US16269848
申请日:2019-02-07
IPC分类号: H01L31/00 , H01L31/0735 , H02S10/30 , H01L31/0725 , H01L31/18
摘要: The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.
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公开(公告)号:US20190245109A1
公开(公告)日:2019-08-08
申请号:US16269848
申请日:2019-02-07
IPC分类号: H01L31/0735 , H01L31/0725 , H02S10/30
CPC分类号: H01L31/0735 , H01L31/0725 , H02S10/30
摘要: The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.
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