公开(公告)号：US10325908B2

公开(公告)日：2019-06-18

申请号：US15498289

申请日：2017-04-26

申请人： Alpha and Omega Semiconductor (Cayman) Ltd.

发明人： Sik Lui ,  Madhur Bobde ,  Ji Pan

IPC分类号： H01L29/78 ,  H01L27/06 ,  H01L29/417 ,  H01L29/10 ,  H01L29/08 ,  H01L29/66 ,  H01L29/167

摘要： A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device, comprising a substrate of a first conductivity type, a body region of a second conductivity type, a gate electrode formed in a gate trench extending in the body region and substrate, a lightly doped source region and a heavily doped source region formed in the body region, and a source contact extending to the body region formed in a source contact trench next to the gate trench. The lightly doped source region is extended deeper in the body region than the heavily doped source region. The lightly doped source region is adjacent to the source contact trench. A ballast resistor is formed at the lightly doped source region between the heavily doped source region and the body region and a Schottky diode is formed at a contact between the source contact and the lightly doped source region.

公开(公告)号：US20180315749A1

公开(公告)日：2018-11-01

申请号：US15498289

申请日：2017-04-26

申请人： Alpha and Omega Semiconductor (Cayman) Ltd.

发明人： Sik Lui ,  Madhur Bobde ,  Ji Pan

IPC分类号： H01L27/06 ,  H01L29/78 ,  H01L29/417 ,  H01L29/10 ,  H01L29/08 ,  H01L29/66 ,  H01L29/167

CPC分类号： H01L27/0629 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/41741 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7813

摘要： A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device, comprising a substrate of a first conductivity type, a body region of a second conductivity type, a gate electrode formed in a gate trench extending in the body region and substrate, a lightly doped source region and a heavily doped source region formed in the body region, and a source contact extending to the body region formed in a source contact trench next to the gate trench. The lightly doped source region is extended deeper in the body region than the heavily doped source region. The lightly doped source region is adjacent to the source contact trench. A ballast resistor is formed at the lightly doped source region between the heavily doped source region and the body region and a Schottky diode is formed at a contact between the source contact and the lightly doped source region.