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公开(公告)号：US20180315749A1
公开(公告)日：2018-11-01
申请号：US15498289
申请日：2017-04-26
发明人： Sik Lui , Madhur Bobde , Ji Pan
IPC分类号： H01L27/06 , H01L29/78 , H01L29/417 , H01L29/10 , H01L29/08 , H01L29/66 , H01L29/167
CPC分类号： H01L27/0629 , H01L29/086 , H01L29/0865 , H01L29/1095 , H01L29/167 , H01L29/41741 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7813
摘要： A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device, comprising a substrate of a first conductivity type, a body region of a second conductivity type, a gate electrode formed in a gate trench extending in the body region and substrate, a lightly doped source region and a heavily doped source region formed in the body region, and a source contact extending to the body region formed in a source contact trench next to the gate trench. The lightly doped source region is extended deeper in the body region than the heavily doped source region. The lightly doped source region is adjacent to the source contact trench. A ballast resistor is formed at the lightly doped source region between the heavily doped source region and the body region and a Schottky diode is formed at a contact between the source contact and the lightly doped source region.
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公开(公告)号：US10714580B2
公开(公告)日：2020-07-14
申请号：US15891300
申请日：2018-02-07
发明人： Sik Lui
IPC分类号： H01L29/423 , H01L29/78 , H01L29/66 , H01L27/06 , H01L21/265 , H01L27/07
摘要： A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device, comprising a substrate of a first conductivity type, a body region of a second conductivity type, a gate electrode formed in a gate trench extending in the body region and substrate, a lightly doped source region and a heavily doped source region formed in the body region, and a trench contact extending to the body region formed in a contact trench. A contact implant of the second conductivity type is formed surrounding a bottom portion of the contact trench and it also forms surrounding sidewall portions of the contact trench where it contacts with the lightly doped source region to form a PN diode.
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公开(公告)号：US20190245051A1
公开(公告)日：2019-08-08
申请号：US15891300
申请日：2018-02-07
发明人： Sik Lui
IPC分类号： H01L29/423 , H01L29/78 , H01L29/66 , H01L27/06 , H01L21/265
摘要： A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device, comprising a substrate of a first conductivity type, a body region of a second conductivity type, a gate electrode formed in a gate trench extending in the body region and substrate, a lightly doped source region and a heavily doped source region formed in the body region, and a trench contact extending to the body region formed in a contact trench. A contact implant of the second conductivity type is formed surrounding a bottom portion of the contact trench and it also forms surrounding sidewall portions of the contact trench where it contacts with the lightly doped source region to form a PN diode.
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公开(公告)号：US20180315846A1
公开(公告)日：2018-11-01
申请号：US15498366
申请日：2017-04-26
发明人： Madhur Bobde , Sik Lui
IPC分类号： H01L29/78 , H01L29/423 , H01L29/788 , H01L29/40 , H01L21/28 , H01L29/66
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/4236 , H01L29/42376 , H01L29/66734
摘要： A shielded gate trench field effect transistor comprises an epitaxial layer above a substrate, a body region, a trench formed in the body region and epitaxial layer and one or more source regions formed in a top surface of the body region and adjacent a sidewall of the trench. A shield electrode is formed in a lower portion of the trench and a gate electrode is formed in an upper portion of the trench above the shield electrode. The shield electrode is insulated from the epitaxial layer by a first dielectric layer. The gate electrode is insulated from the epitaxial layer by the first dielectric layer and insulated from the shield electrode by a second dielectric layer. The first and second dielectric layer has a same thickness.
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公开(公告)号：US10325908B2
公开(公告)日：2019-06-18
申请号：US15498289
申请日：2017-04-26
发明人： Sik Lui , Madhur Bobde , Ji Pan
IPC分类号： H01L29/78 , H01L27/06 , H01L29/417 , H01L29/10 , H01L29/08 , H01L29/66 , H01L29/167
摘要： A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device, comprising a substrate of a first conductivity type, a body region of a second conductivity type, a gate electrode formed in a gate trench extending in the body region and substrate, a lightly doped source region and a heavily doped source region formed in the body region, and a source contact extending to the body region formed in a source contact trench next to the gate trench. The lightly doped source region is extended deeper in the body region than the heavily doped source region. The lightly doped source region is adjacent to the source contact trench. A ballast resistor is formed at the lightly doped source region between the heavily doped source region and the body region and a Schottky diode is formed at a contact between the source contact and the lightly doped source region.
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公开(公告)号：US10263070B2
公开(公告)日：2019-04-16
申请号：US15620717
申请日：2017-06-12
IPC分类号： H01L29/06 , H01L29/40 , H01L29/78 , H01L29/10 , H01L29/423 , H01L29/66 , H01L21/265 , H01L21/266
摘要： Aspects of the present disclosure disclose a superjunction trench MOSFET device for low voltage or medium voltage devices and a method of fabricating the same. The superjunction trench MOSFET device according to aspects of the present disclosure comprises an active cell region and a termination region disposed at an outer periphery of the active cell region. The active cell region comprises an array of device cells with the superjunction structure. The termination region may comprise a termination structure. In one embodiment, the termination structure includes guard rings in an intrinsic epitaxial layer. In one embodiment, the termination structure includes an array of floating P columns. In another embodiment, the termination structure includes an array of floating P columns and floating termination trenches.
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公开(公告)号：US20180358433A1
公开(公告)日：2018-12-13
申请号：US15620717
申请日：2017-06-12
IPC分类号： H01L29/06 , H01L29/78 , H01L29/10 , H01L29/423 , H01L29/66 , H01L21/265 , H01L21/266
CPC分类号： H01L29/0634 , H01L21/26513 , H01L21/266 , H01L29/0623 , H01L29/0696 , H01L29/1095 , H01L29/4236 , H01L29/66734 , H01L29/7811 , H01L29/7813
摘要： Aspects of the present disclosure disclose a superjunction trench MOSFET device for low voltage or medium voltage devices and a method of fabricating the same. The superjunction trench MOSFET device according to aspects of the present disclosure comprises an active cell region and a termination region disposed at an outer periphery of the active cell region. The active cell region comprises an array of device cells with the superjunction structure. The termination region may comprise a termination structure. In one embodiment, the termination structure includes guard rings in an intrinsic epitaxial layer. In one embodiment, the termination structure includes an array of floating P columns. In another embodiment, the termination structure includes an array of floating P columns and floating termination trenches.
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公开(公告)号：US10211333B2
公开(公告)日：2019-02-19
申请号：US15498366
申请日：2017-04-26
发明人： Madhur Bobde , Sik Lui
IPC分类号： H01L29/78 , H01L29/423 , H01L29/788 , H01L29/40 , H01L21/28 , H01L29/66
摘要： A shielded gate trench field effect transistor comprises an epitaxial layer above a substrate, a body region, a trench formed in the body region and epitaxial layer and one or more source regions formed in a top surface of the body region and adjacent a sidewall of the trench. A shield electrode is formed in a lower portion of the trench and a gate electrode is formed in an upper portion of the trench above the shield electrode. The shield electrode is insulated from the epitaxial layer by a first dielectric layer. The gate electrode is insulated from the epitaxial layer by the first dielectric layer and insulated from the shield electrode by a second dielectric layer. The first and second dielectric layer has a same thickness.
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