公开(公告)号：US20150295495A1

公开(公告)日：2015-10-15

申请号：US14252568

申请日：2014-04-14

申请人： Alpha and Omega Semiconductor Incorporated

发明人： Sik K. Lui ,  Daniel S. Ng ,  Xiaobin Wang

IPC分类号： H02M3/158

CPC分类号： H02M3/158 ,  H03K17/164

摘要： A switch circuit includes a first MOS transistor and a second MOS transistor of a same conductivity type connected in parallel between a first terminal and a second terminal. The first and second MOS transistors have respective gate terminals coupled to the control terminal to receive a control signal to turn the switch circuit on or off where the control signal transitions from a first voltage level to a second voltage level at a slow rate of change. The first MOS transistor has a first threshold voltage and the second MOS transistor has a second threshold voltage where the first threshold voltage is less than the second threshold voltage

摘要翻译： 开关电路包括在第一端子和第二端子之间并联连接的相同导电类型的第一MOS晶体管和第二MOS晶体管。 第一和第二MOS晶体管具有耦合到控制端子的相应的栅极端子，以接收控制信号以使开关电路接通或关断，其中控制信号以缓慢的变化速率从第一电压电平转换到第二电压电平。 第一MOS晶体管具有第一阈值电压，而第二MOS晶体管具有第二阈值电压，其中第一阈值电压小于第二阈值电压

公开(公告)号：US10418899B2

公开(公告)日：2019-09-17

申请号：US14252568

申请日：2014-04-14

申请人： Alpha and Omega Semiconductor Incorporated

发明人： Sik K. Lui ,  Daniel S. Ng ,  Xiaobin Wang

IPC分类号： H02M3/158 ,  H03K17/16

摘要： A switch circuit includes a first MOS transistor and a second MOS transistor of a same conductivity type connected in parallel between a first terminal and a second terminal. The first and second MOS transistors have respective gate terminals coupled to the control terminal to receive a control signal to turn the switch circuit on or off where the control signal transitions from a first voltage level to a second voltage level at a slow rate of change. The first MOS transistor has a first threshold voltage and the second MOS transistor has a second threshold voltage where the first threshold voltage is less than the second threshold voltage.

公开(公告)号：US20160322469A1

公开(公告)日：2016-11-03

申请号：US14702695

申请日：2015-05-02

申请人： Alpha and Omega Semiconductor Incorporated

发明人： Anup Bhalla ,  François Hébert ,  Sung-Shan Tai ,  Sik K. Lui

IPC分类号： H01L29/423 ,  H01L29/40 ,  H01L29/06 ,  H01L27/088

CPC分类号： H01L29/42368 ,  H01L27/088 ,  H01L29/0619 ,  H01L29/401 ,  H01L29/4236

摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.

摘要翻译： 本发明公开了一种半导体功率器件。 沟槽半导体功率器件包括从半导体衬底的顶表面开口的沟槽栅极，被包围在设置在衬底底表面上的漏区以上的顶表面附近的体区中的源极区围绕。 所述半导体功率器件还包括植入离子块，所述植入离子块设置在所述身体区域旁边的台面区域的上表面上，所述植入离子块具有基本上大于0.3微米的厚度，用于阻挡体注入离子和源离子进入台面区域 从而可以减少用于制造半导体功率器件的掩模。