公开(公告)号：US20170141225A1

公开(公告)日：2017-05-18

申请号：US14852521

申请日：2015-09-12

Applicant: Alpha and Omega Semiconductor Incorporated

Inventor： Shekar Mallikarjunaswamy ,  John Chen ,  Yongzhong Hu

IPC: H01L29/78 ,  H01L29/161 ,  H01L29/66 ,  H01L29/06 ,  H01L29/417

CPC classification number: H01L29/7835 ,  H01L29/0692 ,  H01L29/1083 ,  H01L29/161 ,  H01L29/402 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/66659 ,  H01L29/66681

Abstract: In an embodiment, this invention discloses a top-drain lateral diffusion metal oxide field effect semiconductor (TD-LDMOS) device supported on a semiconductor substrate. The TD-LDMOS includes a source electrode disposed on a bottom surface of the semiconductor substrate. The TD-LDMOS further includes a source region and a drain region disposed on two opposite sides of a planar gate disposed on a top surface of the semiconductor substrate wherein the source region is encompassed in a body region constituting a drift region as a lateral current channel between the source region and drain region under the planar gate. The TD-LDMOS further includes at least a trench filled with a conductive material and extending vertically from the body region near the top surface downwardly to electrically contact the source electrode disposed on the bottom surface of the semiconductor substrate.

公开(公告)号：US10008598B2

公开(公告)日：2018-06-26

申请号：US14852521

申请日：2015-09-12

Applicant: Alpha and Omega Semiconductor Incorporated

Inventor： Shekar Mallikarjunaswamy ,  John Chen ,  Yongzhong Hu

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L29/161

CPC classification number: H01L29/7835 ,  H01L29/0692 ,  H01L29/1083 ,  H01L29/161 ,  H01L29/402 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/66659 ,  H01L29/66681

Abstract: In an embodiment, this invention discloses a top-drain lateral diffusion metal oxide field effect semiconductor (TD-LDMOS) device supported on a semiconductor substrate. The TD-LDMOS includes a source electrode disposed on a bottom surface of the semiconductor substrate. The TD-LDMOS further includes a source region and a drain region disposed on two opposite sides of a planar gate disposed on a top surface of the semiconductor substrate wherein the source region is encompassed in a body region constituting a drift region as a lateral current channel between the source region and drain region under the planar gate. The TD-LDMOS further includes at least a trench filled with a conductive material and extending vertically from the body region near the top surface downwardly to electrically contact the source electrode disposed on the bottom surface of the semiconductor substrate.