公开(公告)号：US08772091B2

公开(公告)日：2014-07-08

申请号：US13966938

申请日：2013-08-14

Applicant: Analog Devices, Inc.

Inventor： Javier A Salcedo ,  David Hall Whitney

IPC: H01L21/8222

CPC classification number: H01L21/8222 ,  H01L27/0262

Abstract: Apparatus and methods for electronic circuit protection under high stress operating conditions are provided. In one embodiment, an apparatus includes a substrate having a first p-well, a second p-well adjacent the first p-well, and an n-type region separating the first and second p-wells. An n-type active area is over the first p-well and a p-type active area is over the second p-well. The n-type and p-type active areas are electrically connected to a cathode and anode of a high reverse blocking voltage (HRBV) device, respectively. The n-type active area, the first p-well and the n-type region operate as an NPN bipolar transistor and the second p-well, the n-type region, and the first p-well operate as a PNP bipolar transistor. The NPN bipolar transistor defines a relatively low forward trigger voltage of the HRBV device and the PNP bipolar transistor defines a relatively high reverse breakdown voltage of the HRBV device.

Abstract translation: 提供了在高应力操作条件下进行电子电路保护的装置和方法。 在一个实施例中，一种装置包括具有第一p阱，邻近第一p阱的第二p阱和分离第一和第二p阱的n型区的衬底。 n型有源区域在第一p阱上方，p型有源区域超过第二个p阱。 n型和p型有源区分别电连接到高反向阻断电压（HRBV）器件的阴极和阳极。 n型有源区，第一p阱和n型区用作NPN双极晶体管，第二p阱，n型区和第一p阱用作PNP双极晶体管。 NPN双极晶体管定义了HRBV器件的相对低的正向触发电压，PNP双极晶体管限定了HRBV器件的相对高的反向击穿电压。